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    MACOM JH-119-PIN

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    DigiKey JH-119-PIN Tray 21 1
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    MACOM JHS-119-PIN

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    DigiKey JHS-119-PIN Tray 19 1
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    Richardson RFPD JHS-119-PIN 9
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    MACOM SW-119-PIN

    IC RF SWITCH 2GHZ DI-4
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    Richardson RFPD SW-119-PIN 1
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    MACOM AM-119-PIN

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    DigiKey AM-119-PIN Bulk 1
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    Richardson RFPD AM-119-PIN 1
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    MACOM SWD-119-PIN

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    119PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MS-026

    Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
    Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •


    Original     		PDF MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 100-Pin 119-Pin 165-pin MT55L512L18P MS-026 MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512V18P

    MT55L256L18P1T-10A

    Abstract: MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal
    Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •


    Original     		PDF MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 August/7/00 119-pin 165-pin MT55L256L18P1 MT55L256L18P1T-10A MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal

    as15 G

    Abstract: AS15 U as15 h TB001 0AP15 IS82C600 TMS320LC54X 6AP15 AS10
    Text: ISSI ISSI IS82C600 IS82C600 TRAILBLAZER High-Speed SRAM with Address Decoding and Ready Logic ® PRELIMINARY JANUARY 1999 FEATURES • Zero wait-state performance on the Primary Bus — Point-to-point interface between the SRAM and the high-speed processor


    Original     		PDF IS82C600 TMS320LC54x IS82C600-8B IS82C600-8BI IS82C600-9B IS82C600-9BI IS82C600-10B IS82C600-10BI TB001-0B as15 G AS15 U as15 h TB001 0AP15 IS82C600 6AP15 AS10

    t10-25 u2

    Abstract: G2156 f10107
    Text: Preliminary GS816273AC-300/275/250/225/200 300 MHz–200 MHz 256K x 72 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 209-Pin BGA Commercial Temp Industrial Temp Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		PDF GS816273AC-300/275/250/225/200 209-Pin 209-bump 816273A t10-25 u2 G2156 f10107

    IS61LPS102418A

    Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI 1024Kx18
    Text: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		PDF IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 1024K JEDE30 PK13197LQ 5M-1982. IS61LPS102418A IS61LPS25672A IS61LPS51236A IS61LPS51236A-200TQLI 1024Kx18

    GS88218

    Abstract: GS88236
    Text: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.


    Original     		PDF GS88218/36B-11/11 119-Bump x16/x32 GS88218 GS88236

    K9F2G08U0C

    Abstract: G388 180I 88436B
    Text: Preliminary GS88418/36B-200/180/166/150/133 512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 119-Bump BGA Commercial Temp Industrial Temp Features LBO input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of


    Original     		PDF GS88418/36B-200/180/166/150/133 119-Bump x18/x36 K9F2G08U0C G388 180I 88436B

    Untitled

    Abstract: No abstract text available
    Text: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.


    Original     		PDF 119-pin MT55L512L18F

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


    Original     		PDF MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F July/18/00 119-Pin 165-pin June/13/00

    W48C60

    Abstract: J0801 w48c60-422 J0901 MC100LVEL39 MC12430 SME5410MCZ-270 587-pin TMS 3450 TMS 3450 specifications
    Text: SME5410MCZ-270 July 1998 UltraSPARC -IIi CPU Module DATA SHEET 270 MHz CPU, 256 Kbyte E-cache, UPA, 66 MHz PCI DESCRIPTION The UltraSPARC™-IIi CPU module SME5410MCZ-270 is a high performance, SPARC V9-compliant, small form-factor CPU module. It interfaces to the UltraSPARC Port Architecture 64S (UPA64S) interconnect bus,


    Original     		PDF SME5410MCZ-270 SME5410MCZ-270) UPA64S) UPA64S W48C60 J0801 w48c60-422 J0901 MC100LVEL39 MC12430 SME5410MCZ-270 587-pin TMS 3450 TMS 3450 specifications

    GS840E18A

    Abstract: GS840E32A GS840E36A
    Text: Preliminary GS840E18/32/36AT/B-190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation


    Original     		PDF GS840E18/32/36AT/B-190/180/166/150/100 840E18A GS840E18A GS840E32A GS840E36A

    IS61LPD51218A

    Abstract: IS61LPD25636A IS61VPD25636A IS61VPD51218A
    Text: ISSI IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    Original     		PDF IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 100-Pin 119-pin 165-pin PK13197LQ 5M-1982. IS61LPD51218A IS61LPD25636A

    IS61LPS25632A

    Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		PDF IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A PK13197LQ 5M-1982. IS61LPS25632A IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A

    zbt sram 1994

    Abstract: No abstract text available
    Text: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.


    Original     		PDF 119-pin MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 MT55L256L18F1 zbt sram 1994

    Untitled

    Abstract: No abstract text available
    Text: IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 128K x 36 and 256K x 18 4Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM MAY 2007 FEATURES DESCRIPTION • 100 percent bus utilization The 4 Meg 'NLF/NVF' product family feature high-speed, low-power synchronous static RAMs designed to provide


    Original     		PDF IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 100-pin 119-ball 165ball 5M-1982. PK13197LQ

    Untitled

    Abstract: No abstract text available
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		PDF IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 100-Pin 119-bC 5M-1982. PK13197LQ

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


    Original     		PDF 100-pin 165-pin 119-pin July/18/00 June/13/00 MT58L512L18F

    4c 8184

    Abstract: BGA 2J marking code 18-SE
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •


    Original     		PDF Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F 4c 8184 BGA 2J marking code 18-SE

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		PDF Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


    Original     		PDF 100-pin 165-pin 119-Pin MT58L512L18F

    MT58L128L32

    Abstract: No abstract text available
    Text: 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-PIN TQFP1 • Fast clock and OE# access times


    Original     		PDF 165-pin 100-pin 119-Pin MT58L256L18P1 MT58L128L32

    Untitled

    Abstract: No abstract text available
    Text: m IS61SF12832 128K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 11 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals


    OCR Scan     		PDF IS61SF12832 100-Pin 119-pin PK13197TÃ QGQGS55 17-1A T004404

    Untitled

    Abstract: No abstract text available
    Text: IS82C600 TRAILBLAZER ISSI ADVANCE INFORMATION APRIL 1998 Virtual Dual-Port SRAM FEATURES • Virtual Dual-Port VDP SRAM • Seamless interface to Texas Instrum ents’ TMS320LC5x and TMS320LC54x high-speed DSPs • Zero wait-state performance up to 133 MHz on


    OCR Scan     		PDF IS82C600 TMS320LC5x TMS320LC54x TB001-0A

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61SP25616 256K x 16 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control


    OCR Scan     		PDF IS61SP25616 100-Pin 119-pin IS61SP25616 IS61SP25616-166TQ IS61SP25616-166B IS61SP25616-150TQ IS61SP25616-150B IS61SP25616-133TQ IS61SP25616-133B