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    HY62UF16201A-I

    Abstract: HY62UF16201A
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original     		PDF HY62UF16201A 128Kx16bit HYUF621Ac 100ns HY62UF16201A-I

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T

    Untitled

    Abstract: No abstract text available
    Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)


    Original     		PDF WSF128K16-XXX 128Kx16 WSF128K16-H1X WSF128K16-XG1UX1 120ns 66-pin, ICCx32

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE MRAM 128Kx16-SOP 3DMR2M16VS2427 Magnetoresistive Ram MODULE 2 Mbit MRAM organized as 128Kx16 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Organized as 128Kx16. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access


    Original     		PDF 128Kx16-SOP 3DMR2M16VS2427 128Kx16 128Kx16. MMXX00000000XXX 3DFP-0427-REV

    Untitled

    Abstract: No abstract text available
    Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical


    Original     		PDF WSF2816-39XX 128Kx16 512Kx16 WSF2816-39G2UX WSF2816-39H1X ICCx16

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original     		PDF HY62QF16201A 128Kx16bit LL/SL-pa6201A HYQF621Ac 100ns

    23265

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory


    Original     		PDF N02L1618C1A 128Kx16 N02L1618C1A N02L163WN1A, 3265-A 23265

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/20/1999 PM0549

    29F200T

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 29F200T

    SD10

    Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
    Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)


    Original     		PDF WSF128K16-XXX 128Kx16 120ns WSF128K16-XHX WSF128K16-H1X WSF128K16-XG1UX1 WSF128K16-XG1TX 66-pin, SD10 SD13 SD14 SD15 WSF128K16-XXX scs 2003

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The


    Original     		PDF HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 128Kx16bit HY62UF16200 HY62QF16200 HY62EF16200 16bits. SM-1994

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original     		PDF HY62UF16201 128Kx16bit 16bit. 48ball SM-1994. SM-1994

    A82DL1632TG-70UF

    Abstract: DL1632
    Text: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit


    Original     		PDF A82DL16x2T Bit/1Mx16 128Kx16 MO-219 A82DL1632TG-70UF DL1632

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any


    Original     		PDF HY62LF16206B-DT12C 128Kx16bit HY62LF16206B 16bits. 120ns

    tray matrix bga

    Abstract: N02L6181AB27I
    Text: N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device


    Original     		PDF N02L6181A 128Kx16 N02L6181A N02L63W3A, tray matrix bga N02L6181AB27I

    F28335

    Abstract: tms320f28335 i2c example TMS320F28335 F28335 kit eZdsp F28335 TMDSEZ28335 adc tms320f28335 C2000 texas instruments uart IEEE 1149.1 JTAG
    Text: TMS320F28335 eZdsp Starter Kit TMDSEZ28335 Product Information Description The F28335 eZdsp starter kit is a complete software development platform for the TMS320F2833x series of floating-point Digital Signal Controllers. The eZdsp kit includes an F28335 target board that features integrated JTAG emulation, 128Kx16 asynchronous SRAM,


    Original     		PDF TMS320F28335 TMDSEZ28335 F28335 TMS320F2833x 128Kx16 RS-232 Co232 tms320f28335 i2c example F28335 kit eZdsp F28335 TMDSEZ28335 adc tms320f28335 C2000 texas instruments uart IEEE 1149.1 JTAG

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549

    Untitled

    Abstract: No abstract text available
    Text: Preliminary b q 4 0 2 4 / b q 4 0 2 4 Y BENCHMARQ 128KX16 Nonvolatile SRAM Features General Description > D ata retention in the absence of The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g ra l co n tro l circ u itry an d


    OCR Scan     		PDF 128KX16 bq4024 152-bit 40-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)


    OCR Scan     		PDF WSF128K16-XXX 128Kx16 120nS 66-pin, 256Kx8

    256x16* STATIC RAM

    Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
    Text: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM


    OCR Scan     		PDF T-46-23-20 AK5216128WV 128Kx 16/256x16 AK5216128 33MHz. 128Kx16bit 256x16 AK5216128WV-10 256x16* STATIC RAM c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50

    128KX16

    Abstract: DQ10C
    Text: BENCHMARQ_ bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ral control circu itry an d lith ­


    OCR Scan     		PDF bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit DQ10C

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


    OCR Scan     		PDF SST32LH802 128Kx16 SST32LH802

    Untitled

    Abstract: No abstract text available
    Text: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)


    OCR Scan     		PDF WSF128K16-XXX 128Kx16 120ns 01HXX 01HYX 02HXX 02HYX

    25X1

    Abstract: bq4024 bq4024Y
    Text: bq4024/bq4024Y BENCHMARQ 128Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 w ords by 16 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d


    OCR Scan     		PDF bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit D0037Q0 25X1 bq4024Y