HY6116-10
Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high
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t-46-23-12
HY6116
2048-word
HY6116-10
HY6116-12
HY6116-15
HY6116
100ns
120ns
150ns
HY6116-10
HY6116-12
HY6116-15
Hyundai Semiconductor
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Untitled
Abstract: No abstract text available
Text: — =Z1- CY7B164 CY7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs
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CY7B164
CY7B166
7B166)
Y7B164
CY7B166
166only.
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Untitled
Abstract: No abstract text available
Text: Programmable Logic Element PLE Family Features/ Benefits Ordering Information • Programmable replacement tor conventional TTL logic PLE5P8 A C N SHRP • Reduces 1C Inventories and simplifies their control • Expedites and simplifies prototyping and board layout
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CY7C167A
Abstract: Zl81
Text: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional Description • Automatic power-down when dese lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs
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CY7C167A
desC167Aâ
20-Lead
300-Mil)
CY7C167Aâ
20-Lead
35DMB
Zl81
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CDM6116
Abstract: No abstract text available
Text: 37E D HARRIS SEMICOND SECTOR I 43QE271 QG2b224 3' « H A S - High-Reliability CMOS LSI Devices CDM6116BC/3 Advance Information High-Reliability CMOS 2048-Word By 8-Bit LSI Static RAM A 7 - 1 A 6 - 2 2 4 - V0D 2 3 - AS 22 - A9
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43QE271
QG2b224
CDM6116BC/3
2048-Word
24-pin
-l/03
-l/08
92CS-40498
92CW-40497
CDM6116
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6516
Abstract: No abstract text available
Text: m HM-6516/883 HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM January 1992 Description Features • This Circuit Is Processed In Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. 275^W Max.
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HM-6516/883
M-6516/883
HM-6516/883
MIL-M38510
MIL-STD-1835,
GD1P1-T24
CQCC1-N32
6516
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7C291
Abstract: No abstract text available
Text: This is an abbreviated datasheet. Contact a Cypress representative for complete specifications. For new designs, please refer to the CY7C291A/2A. /''’Ypppqc SEMICONDUCTOR • Windowed for reprogrammability • CMOS for optimum speed/power Reprogrammable 2K x 8
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CY7C291A/2A.
300-mil
600-mil
CY7C291
CY7C292
126x128
300-m
7C291--
7C292--
7C291
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53RA1681
Abstract: No abstract text available
Text: a 53/63RA1681/A Advanced Micro Devices 2048 x8 High Performance Registered PROM with Asynchronous Enable FEATURES/BENEFITS APPLICATIONS • Synchronous output enable • Microprogram control store • Edge-triggered “D" registers • State sequencers • Versatile 1:16 user programmable Initialization
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53/63RA1681/A
24-pln
53/63RA1681
53/63RA1681A
RA1681/A
53RA1681
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CDM6117AE3
Abstract: M-36261 ICAN-6525 RCA-CDM6117A-3 CDM6117A-3 ips london rca power transistor cdm6117ae CDM6117A mo-015aa
Text: C M O S M em ory/M icroprocessor Products _ Solid State Division CDM6117A-3 v/ 003967 _ T " ^ 6 ’7 A 6 - 2 24 - VDD 23 - A8 A 5 - 3 A 4 - 4 21 - W F 5 20 - "£5 A 3 - 1 22 - A9 A 2 - 6
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UCBZ70
CDM6117A-3,
2048-Word
24-pin
M-36261
92CM-36262RI
CDM6117AE3
M-36261
ICAN-6525
RCA-CDM6117A-3
CDM6117A-3
ips london
rca power transistor
cdm6117ae
CDM6117A
mo-015aa
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