gm71c4400b
Abstract: No abstract text available
Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d
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GM71C4400B/BL
GMM71C4100BR/BLR
GM71C4400BT/BLT
031MIN
gm71c4400b
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KM41C4000A
Abstract: No abstract text available
Text: S A M S UN G E L E C T R O N I C S INC tME ]> • 7 T b M : m 2 D G 1 M 5 0 4 flOO ■ Sn6K KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic
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KMM584020A
KMM584020A
KM41C4000AU
20-pin
30-pin
22/iF
130ns
KMM584020A-8
150ns
KM41C4000A
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Untitled
Abstract: No abstract text available
Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BJ
x16Bit
1Mx16
30bSS
40SOJ
7Rb4142
Q030b5t>
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DECT/DSP GROUP
Abstract: AN 7274
Text: SIEM ENS ICs for Communications 4 Channel ADPCM Controller Quad ADPCM PEB7274 Version 1.2 PEF 7274 Version 1.2 Data Sheet 08.97 DS 1 PEB 7274 Revision History: Current Version: 08.97 Previous Version: Preliminary Data Sheet 01.97 Page in previous Version
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PEB7274
DECT/DSP GROUP
AN 7274
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COUNTER MODULO 503
Abstract: TBA 1205 TBA 281 lcd wz AM2085 TBA 651 eaw t200 T200 BCX1 microprocessor architecture
Text: Cl Preliminary Am2085 ISDN Subscriber Access Controller ISAC-S Advanced Micro Devices DISTINCTIVE CHARACTERISTICS S-Bus transceiver according to CCITT i.430 Recovery of clock and frame Frame alignment for trunk line termination Access to Echo bit Serial interfaces for various types of B-channel
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Am2085
PD040
COUNTER MODULO 503
TBA 1205
TBA 281
lcd wz
TBA 651
eaw t200
T200
BCX1
microprocessor architecture
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Untitled
Abstract: No abstract text available
Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416C1000B,
KM416C1200B
KM416V1000B,
KM416V1200B
1Mx16
DG23333
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY 514400 B S eries 1Mx4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. "Hie HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514400B
1AC11-00-MAY94
HY514400BJ
HY514400BU
HY514400BSU
HY514400BT
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NG9-2
Abstract: No abstract text available
Text: KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4000AL
41C4000AL
18-LEAD
20-LEAD
NG9-2
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC M IC R O N OO Ü Û Q 4 4 11G b3E D 2 MEG X IMRN MT16D(T 232 32, 4 MEG x 16 DRAM MODULE 2 MEG X 32, 4 MEG X 16 DRAM MODULE FAST-PAGE-MODE (MT16D(T)232) LOW POWER, EXTENDED REFRESH (MT16D(T)232 L) FEATURES PIN ASSIGNMENT (Top View)
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MT16D
72-pin
824mW
024-cycle
MT160
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gm71c4400az
Abstract: No abstract text available
Text: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti
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GM71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
300-mil
gm71c4400az
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Untitled
Abstract: No abstract text available
Text: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 48 V 2 104 A /A L/A LL /A S L is a high spe ed C M O S 2,0 9 7 ,1 5 2 b i t x 8 D ynam ic R andom A cce ss M em ory. Its d e sig n is o p tim iz e d fo r high
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KM48V2104A/AL/ALL/ASL
KM48V2104A/AL/ALL/ASL-6
110ns
KM48V2104A/AL/ALL/ASL-7
130ns
KM48V2104A/AL/ALL/ASL-8
150ns
28-LEAD
GD11bl3
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XRT6165ID
Abstract: se819 TX2M
Text: XR- T61 65 X T E X A R [.th e a n a lo g p lu s c o m p a n y Codirectional Digital Data Processor TM May 1997-3 FEATURES APPLICATIONS • Low Power CMOS Technology • • All Receiver and Transmitter Inputs and Outputs are TTL Compatible CCITT G.703 Compliant 64kbps Codirectional
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125fis
64kbps
64kbAR
XRT6165ID
se819
TX2M
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G732
Abstract: MA811 Marconi radiation hard
Text: MARCONI CKT TECHNOLOGY 3GE D • S7Ô3442 0001520 5 ■ 7^75'"'// ' 3 3 Digital Switch Module M @ ïc s a i Electronic Devices FEATURES MA811 DIO [7 DI1 DI2 2| FSP1 [2 27] VDD [3 26] CLK 2| CI1 * Single 5v supply DI3 [4 * Low power CMOS design DI4 [5 ¡3
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0G01S2Ã
MA811
input/256
Std-883C
ESA9000
G732
MA811
Marconi radiation hard
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Untitled
Abstract: No abstract text available
Text: 1 M E G x 16 EDO DRAM V IIC Z R O N n P A V n * M M T4C 1M 16E 5 \ m M T4L C 1M 16E 5 FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single pow er supply (+3.3V +0.3V or 5V ±10%
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024-cycle
44/50-Pin
42-Pin
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Untitled
Abstract: No abstract text available
Text: /= T SCS "THOMSON * 7 1 » [H D ^ Q [l[L [l(ê ¥ ^ (Q )R I]D (g i M 3 4 8 8 256 x 256 DIGITAL SWITCHING MATRIX P R E L IM IN A R Y D ATA • 256 INPUT AN D 256 O U TP U T C H AN N E L CM O S D IG ITA L SW ITC HING M ATR IX C O M PATIBLE W ITH M 088
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Untitled
Abstract: No abstract text available
Text: MICRON 1 MEG DRAM MODULE 1 MEG X X MT9D19 9 DRAM MODULE 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply
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MT9D19
MT9D19)
MT9D19
30-pin
575mW
512-cycle
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80C49H
Abstract: 4275a5 PD80C49H p21213 P0350
Text: N E C % fW ELECTRONICS I NC Tñ bM27SaS 0 0 1 3 5 3 b ¿ 2 6427525 N E C ELECTRO N ICS . D escription . The fiPD80C39H, f PD80C49H, and /jPD49H are singlechip, 8 -bit microcomputers containing an 8 -bit CPU, ROM (80C49H and 49H , RAM, I/O ports, and control cir
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bM27SaS
40-Pin
uPD80C39H
uPD80C49H
uPD49H
80C49H
4275a5
PD80C49H
p21213
P0350
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INTEL 8042
Abstract: MBL8042 MBL8243 J055 gdu4 jf1addr xchd
Text: FUJITSU MICROELECTRONICS =17 D E 37>H7fc.2 1 J^T-52-33-/5‘ FU JITSU Advanced Products October 1986 Edition 2.0 M BL8042H /N NMOS Universal Peripheral Interface 8-Bit Microcomputer Description The MBL8042 Universal Peripheral Interface is a slngle-chip 8 -bit
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374T7tia
MBL8042H/N
MBL8042
52jmax
50imax
j055i1
d40006s-1c
INTEL 8042
MBL8243
J055
gdu4
jf1addr
xchd
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