ALC 655
Abstract: ALC 665 ALC 887 MRF158 VK200
Text: Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
|
Original
|
PDF
|
MRF158/D
MRF158
ALC 655
ALC 665
ALC 887
MRF158
VK200
|
940 629 MOTOROLA 220
Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
|
Original
|
PDF
|
MRF158/D
MRF158
940 629 MOTOROLA 220
MOTOROLA POWER 726 MOS FET TRANSISTOR
MRF158
VK200
20WATTS
|
JESD22-B102-C
Abstract: SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586
Text: Reliability Report SGA/SGC Series in SOT-86 Package SnPb Plated SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 SGA-4286 SGA-4386 SGA-4486 SGA-4586 SGA-5286 SGA-5386 SGA-5486 SGA-5586 SGA-6286 SGA-6386 SGA-6486 Matte Sn, RoHS Compliant
|
Original
|
PDF
|
OT-86
SGA-2186
SGA-2286
SGA-2386
SGA-2486
SGA-3286
SGA-3386
SGA-3486
SGA-3586
SGA-4186
JESD22-B102-C
SOT-86
sot86
transistor c 5586
q404 transistor
SGA-6486Z
SGA-6286
JESD22-B102C
q402 transistor
transistor 5586
|
pin configuration of ic TL084
Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
Text: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505
|
Original
|
PDF
|
LH2211
LH2311
LM2901
LM3302
HA17339
HA17393
HA17901
HA17903
ULN2001
ULN2002
pin configuration of ic TL084
8085 microprocessor realtime application
uln2004 application note
LM324 battery tester
LM714
blueflash
LM144
LM358 LM311 PIN CONFIGURATION
ic moc3021
LM714 Application Note
|
tft 320 240 qvga color 16,7
Abstract: JASO THP 100 CCP2E25TE NL3224AC35-06 IL-402-30S-S1L-SA 55LHS-3L
Text: DATA SHEET TFT COLOR LCD MODULE NL3224AC35-06 13.9 cm 5.5 Type , 320 x 240 Pixels, Full Color, High Luminance, Low Reflection NL3224AC35-06 module is composed of the amorphous silicon thin film transistor liquid crystal display (a-Si TFT LCD) panel structure with driver LSIs for driving the TFT (Thin Film Transistor) array and a
|
Original
|
PDF
|
NL3224AC35-06
NL3224AC35-06
DE0203
tft 320 240 qvga color 16,7
JASO
THP 100
CCP2E25TE
IL-402-30S-S1L-SA
55LHS-3L
|
d 5072 transistor
Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
Text: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list
|
Original
|
PDF
|
MC140)
MC140
8088/8085/Z80/6502)
OperatN2003
ULN2004
Delhi-110092.
d 5072 transistor
transistor mc140
817 OPTO-coupler
817 OPTO
microprocessor 8255 application seven segment
opto 817
MC140 Datasheet
IC 8155
8282/8283
eprom 8243
|
731 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts
|
Original
|
PDF
|
MRF158
MRF158
731 motorola
|
940 629 MOTOROLA 113
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
|
Original
|
PDF
|
MRF158/D
MRF158
940 629 MOTOROLA 113
Nippon capacitors
|
transistor NEC D 822 P
Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
|
Original
|
PDF
|
NE434S01
NE434S01
NE434S01-T1B
transistor NEC D 822 P
NEC D 822 P
C10535E
NE434S01-T1
NE434S01-T1B
|
K 1358 fet transistor
Abstract: NE334S01 nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
|
Original
|
PDF
|
NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
K 1358 fet transistor
nec 2761
s11 diode shottky
C10535E
NE334S01-T1
NE334S01-T1B
|
BP317
Abstract: LTE21025R marking code 439
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent
|
Original
|
PDF
|
LTE21025R
OT440A
SCA53
127147/00/02/pp8
BP317
LTE21025R
marking code 439
|
MX0912B251Y
Abstract: capacitor 470 uF
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A
|
Original
|
PDF
|
MX0912B251Y
OT439A
SCA53
127147/00/02/pp12
MX0912B251Y
capacitor 470 uF
|
nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
|
Original
|
PDF
|
2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency
|
Original
|
PDF
|
MX0912B251Y
OT439A
SCA53
127147/00/02/pp12
|
|
|
2SK281
Abstract: 203l2 NE218 NE21889 NE21800
Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure
|
OCR Scan
|
PDF
|
Lj457414
NE21800
NE21889
NE218
NE21800)
2SK281
203l2
NE21889
|
Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSP121 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS Philips S e m ico nd uctors
|
OCR Scan
|
PDF
|
BSP121
SC13b
OT223
135108/00/03/pp12
|
TRANSISTOR K 2191
Abstract: nec 2761
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
|
OCR Scan
|
PDF
|
NE434S01
NE434S01
NE434S01-T1
NE434S01-T1B
IR30-00
TRANSISTOR K 2191
nec 2761
|
2SK281
Abstract: sl2109
Text: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure
|
OCR Scan
|
PDF
|
b427414
NE21800
NE21889
NE218
NE21800)
NE21889)
2SK281
sl2109
|
NE334S01
Abstract: transistor C 2240 K 1358 fet transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
|
OCR Scan
|
PDF
|
NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
IR30-00
transistor C 2240
K 1358 fet transistor
|
Untitled
Abstract: No abstract text available
Text: AVANTEK INC 7b d Ë | lim it it i GDD4443 4 1 Thin Film Cascadable Amplifier 5-400 MHz 410 Series J-74-M -c/ O AVANTEK FEATURES • Low Noise: 2.7 dB UTC-410 TC 1 Case p. 398 UTO-410 TO 8U Case (p. 402) j 1 1 I ELECTRICAL SPECIFICATIONS (Measured in a 50-ohm system @ +15 VDC nominal unless otherwise noted)
|
OCR Scan
|
PDF
|
GDD4443
J-74-M
UTC-410
UTO-410
50-ohm
|
2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
|
OCR Scan
|
PDF
|
2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
|
transistor NEC D 882 p
Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •
|
OCR Scan
|
PDF
|
2SC5012
2SC5012-T1
2SC5012-T2
transistor NEC D 882 p
transistor NEC b 882 p
transistor NEC 882 p
transistor NEC b 882
nec d 882 p transistor
nec 358 amplifier
transistor NEC D 587
34077
6069 marking
|
928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
|
OCR Scan
|
PDF
|
2SC5008
2SC5008
928 606 402 00
|
TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
|
OCR Scan
|
PDF
|
2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
|
