mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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32N12
Abstract: 32N120P
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions
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IXFL32N120P
300ns
100ms
32N120P
1-22-10-C
32N12
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK20N120P
IXFX20N120P
300ns
O-264
PLUS247
20N120P
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26n120
Abstract: ixfx26n120 ixfx26N120P 26N120P PLUS247 220ID 26N12
Text: Preliminary Technical Information PolarTM Power MOSFET IXFK26N120P IXFX26N120P HiPerFETTM VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK26N120P
IXFX26N120P
300ns
O-264
26N120P
26n120
ixfx26n120
ixfx26N120P
PLUS247
220ID
26N12
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings
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IXFH16N120P
IXFT16N120P
300ns
O-247
25VDS
16N120P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions
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IXFH12N120P
IXFV12N120P
IXFV12N120PS
300ns
PLUS220
12N120P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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IXFN26N120P
300ns
OT-227
E153432
26N120P
1-07-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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IXFN30N120P
300ns
OT-227
E153432
30N120P
1-07-A
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IXFA6N120P
Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
Text: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
O-220AB
O-247
6N120P
IXFH6N120P
IXFH6N120
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
6N120P
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IXTK17N120L
Abstract: PLUS247
Text: Preliminary Technical Information IXTK17N120L IXTX17N120L LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 = 1200V = 17A Ω < 900mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK17N120L
IXTX17N120L
O-264
100ms
17N120L
IXTK17N120L
PLUS247
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXFL30N120P
300ns
30N120P
9-20-07-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN32N120P
32N120P
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CHT-PLA8543C
Abstract: No abstract text available
Text: The Leader in High Temperature Semiconductor Solutions Version: 3.1 CHT-NEPTUNE PRELIMINARY DATASHEET High-Temperature High Voltage, Silicon Carbide MOSFET General description Features high-temperature, • Specified from -55 to +225°C Tj high-voltage, Silicon Carbide MOSFET
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O-257
150make
PDS-111102
20-Sep-13
CHT-PLA8543C
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DT25N
Abstract: No abstract text available
Text: Power Module Design for an Ultra Efficient Three-Level Utility Grid Solar Inverter Michael Frisch, Vincotech GmbH, Email: Michael.Frisch@vincotech.com Temesi Ernö, Vincotech Kft., Email: Erno.Temesi@vincotech.com Abstract The race to achieve highest efficiency had engineers turning to innovative topologies and
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100kW,
100kW.
DT25N
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Untitled
Abstract: No abstract text available
Text: Power Module Design for an Ultra Efficient Three-Level Utility Grid Solar Inverter Michael Frisch, Vincotech GmbH, Email: Michael.Frisch@vincotech.com Temesi Ernö, Vincotech Kft., Email: Erno.Temesi@vincotech.com Abstract The race to achieve highest efficiency had engineers turning to innovative topologies and
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100kW,
100kW.
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NCP-A-10-20
Abstract: the calculation of the power dissipation for the IGBT STATIC INDUCTION
Text: cooling options and challenges of high power semiconductor modules Scott G. Leslie Powerex, Inc. For the last 25 years, Scott Leslie has been developing and manufacturing high power silicon-based semiconductor devices. He was responsible for developing high power
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NCP-A-10-20,
NCP-A-10-20
the calculation of the power dissipation for the IGBT
STATIC INDUCTION
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10KV SiC
Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA
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MITSUBISHI CM300
Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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20kHz
MITSUBISHI CM300
MITSUBISHI CM400
cm1000ha-24h
Igbt wafer
cm15 300v
CM400
CM600HU-24F
Mitsubishi Electric IGBT MODULES
CM600HA-24H
cm300 igbt
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MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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20kHz
MITSUBISHI CM400
MITSUBISHI CM300
H BRIDGE inverters circuit diagram using igbt
NPN/transistor NEC K 2500
HALF BRIDGE NPN DARLINGTON POWER MODULE
ups circuit diagram using igbt
IGBT h-series application note
CM30 igbt
CM400
MITSUBISHI cm50-24h
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MSK4805
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. HIGH TEMPERATURE 1200V/100A SiC HALF BRIDGE PEM 4805 FEATURES: Operation to +175°C Case Designed for High Temperature Applications Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching
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MIL-PRF-38534
200V/100A
MIL-PRF-38534
MSK4805
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vienna rectifier
Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
Text: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac
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F-33700
CH-8092
APEC2007)
vienna rectifier
Zero crossing switching thyristors module
three phase bridge rectifier picture
S6 9A Diode Smd
Cree SiC diode die
single phase vienna rectifier
rectifier diode 230V AC input and 230V DC output
rectifier three phase 40a
Cree SiC MOSFET
design and of 1- vienna rectifier
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infineon power cycling igbt3
Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,
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D-59581
200V-Trench-
1998-Kyoto
2003N
00V-IGBT³
2004-N
infineon power cycling igbt3
IGBT4
snap-off diode
infineon igbt3 1200v
infineon power cycling curves
infineon igbt4 1200v
Measurement of stray inductance for IGBT
igbt simulation
IGBT2
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