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    12 MOSFET 3PIN Search Results

    12 MOSFET 3PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    12 MOSFET 3PIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a


    Original     		Si1965DH 2002/95/EC OT-363 SC-70 Si1965DH-T1-E3 Si1965DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si1442DH OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si1442

    Abstract: SI1442DH
    Text: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si1442DH OT-363 SC-70 Si1442DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1442 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si1442DH OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    "leadframe material" DIP 20

    Abstract: MARKING BB SOT363 bb sc70-6
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 Si1417EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC "leadframe material" DIP 20 MARKING BB SOT363 bb sc70-6 PDF

    bb sc70-6

    Abstract: MARKING BB sc70-6
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 Si1417EDH-T1-GE3 11-Mar-11 bb sc70-6 MARKING BB sc70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 Si1917EDH-T1-E3 Si1917EDH-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    6pin MARKING code T

    Abstract: 071 0039
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 Si1917EDH-T1-E3 Si1917EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 6pin MARKING code T 071 0039 PDF

    si1401e

    Abstract: 70080
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 11-Mar-11 si1401e 70080 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V


    Original     		Si1557DH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sc 1287

    Abstract: SI1422DH-T1-GE3
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sc 1287 PDF

    sc 1287

    Abstract: No abstract text available
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 11-Mar-11 sc 1287 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V


    Original     		Si1557DH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1422DH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1307EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.290 at VGS = - 4.5 V ± 0.91 0.435 at VGS = - 2.5 V ± 0.74 0.580 at VGS = - 1.8 V ± 0.64 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1307EDL 2002/95/EC OT-323 SC-70 Si1307EDL-T1-E3 Si1307EDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    max8356

    Abstract: No abstract text available
    Text: 19-2820; Rev 1; 2/12 MAX8536 Evaluation Kit The MAX8536 evaluation EV kit circuit demonstrates the functionality of the MAX8536 ORing MOSFET controller that provides redundancy and fault isolation to highly reliable power systems. The EV kit board can operate in 5V and 3.3V systems. The EV kit is configured for 5V operation.


    Original     		MAX8536 FDB7045L FDB8030L MAX8536 max8356 PDF

    16TPC33M

    Abstract: 6TPC100M EP10QY03 JMK212BJ475KG LMK212BJ105MG MAX1765 MAX1765EVKIT UMK212BJ104KG
    Text: 19-1888; Rev 0; 12/00 MAX1765 Evaluation Kit The MAX1765 features an internal N-channel MOSFET switch and a P-channel synchronous rectifier, and a pin-selectable forced pulse-width modulation PWM mode. The MAX1765 EV kit demonstrates low quiescent current and high efficiency (up to 96%) for maximum battery life. Operation at 1MHz allows the use of


    Original     		MAX1765 800mA 500mA MAX1765 16TPC33M 6TPC100M EP10QY03 JMK212BJ475KG LMK212BJ105MG MAX1765EVKIT UMK212BJ104KG PDF