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    11ES2 Search Results

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    11ES2 Price and Stock

    Hirose Electric Co Ltd DF1B-11ES-2.5RC

    CONN RCPT HSG 11POS 2.50MM
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    DigiKey DF1B-11ES-2.5RC Bag 96 1
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    Avnet Americas DF1B-11ES-2.5RC Bag 100
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    Mouser Electronics DF1B-11ES-2.5RC 1,464
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    Newark DF1B-11ES-2.5RC Bulk 100
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    Sager DF1B-11ES-2.5RC
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    NKK Switches M2011ES2W13

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    C&K ES22MCBE

    Slide Switches DPST OFF-NONE-ON
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    Mouser Electronics ES22MCBE 159
    • 1 $8.44
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    C&K ES21MCBE

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    Mouser Electronics ES21MCBE 146
    • 1 $11.31
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    TTI ES21MCBE Each 160
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    C&K ES21MABE

    Slide Switches R/A DPDT ON-NONE-ON
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    Mouser Electronics ES21MABE 39
    • 1 $12.88
    • 10 $12.3
    • 100 $9.48
    • 1000 $7.55
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    Find more 11ES2 price and stock on Findchips.com

    11ES2 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11ES2 EIC Semiconductor Silicon Rectifier Diodes Original PDF
    11ES2 Nihon Inter Electronics 200 V, diode Original PDF
    11ES2 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    11ES2 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan PDF
    11ES2 Nihon Inter Electronics General Purpose Silicon Rectifier Diode Scan PDF

    11ES2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11ES2

    Abstract: No abstract text available
    Text: ｓ DIODE 11ES2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g Rating Symbol Repetitive Peak Reverse Voltage


    Original     		PDF 11ES2 11ES2

    11ES2

    Abstract: No abstract text available
    Text: ｓ DIODE 11ES2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g Rating Symbol Repetitive Peak Reverse Voltage


    Original     		PDF 11ES2 11ES2

    11ES1

    Abstract: 11ES2
    Text: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202, 11ES2

    Untitled

    Abstract: No abstract text available
    Text: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: www.eicsemi.com 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current


    Original     		PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202,

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    BY228 equivalent

    Abstract: BYD14G RU20A cross reference
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vSE-db0112-1009 BY228 equivalent BYD14G RU20A cross reference

    bvy27-200

    Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
    Text: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference


    Original     		PDF 1N5190GP BYW76 BYT51D 1N5212 UTR2320 BYW32 UTR2340 BYW34 UTR3305 BYW72 bvy27-200 BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200

    11ES2

    Abstract: No abstract text available
    Text: Type：11ES2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコオンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧


    Original     		PDF 11ES2 11ES2

    11ES2

    Abstract: No abstract text available
    Text: Type：11ES2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコオンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧


    Original     		PDF 11ES2 11ES2

    FSF05B60

    Abstract: FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q FCF20B60 f10p04q F5KF20B F10P06Q
    Text: 旧製品・現行品対応表 Discontinued products and their replacements No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 旧製品 現行品 Discon. Replacement


    Original     		PDF 11ES1 10EDB10 11ES2 10EDB20 10JDA10 10JDA20 10JDA40 10DDA10 10DDA20 10DDA40 FSF05B60 FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q FCF20B60 f10p04q F5KF20B F10P06Q

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


    Original     		PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SILICON RECTIFIER DIODE 1IESI 11ES2 11ES4 “ g i a /100~800 v FEATURES 2.7 .106 ° Miniature Size M AX DIA 0 Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024)DIAa 0.54C021) .27(1.06) ° High Surge Capability MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF 11ES2 11ES4 54C021) 11ES1 11ES6 11ES1 11ES2 11ES8

    11E51 11E52 11E54

    Abstract: 11E52 11ES2 11ES8 11ES1 11ES4 11ES6 silicon rectifier diode Low Forward Voltage Diode Diode BFC 110
    Text: SILICON RECTIFIER DIODE 11ES1 11ES2 11ES4 11ES6 11ES8 ÎA/IOO— 800V FEATURES 2.7 .106 d i a o Miniature Size M AX U1A * Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024) d i a 0.54Ç021) ° High Surge Capability . 27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 54C021) 11ES4 11ES6 11E51 11E52 11E54 11E52 11ES8 silicon rectifier diode Low Forward Voltage Diode Diode BFC 110

    15bl11

    Abstract: 11EFS1 11EFS2 11EFS3 11EFS4 11ES2 12BG11 12BH11 12CC12 12JH11
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 150ns 15DF6 15bl11 11EFS2 11EFS3 11EFS4 12BH11 12CC12 12JH11

    11ES2

    Abstract: 15bl11 11EFS1 11EFS2 11EFS3 11EFS4 12BG11 12BH11 12CC12 10-32UNF2A
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 sc-11 -28UNF-2ATÂ i042U 15bl11 11EFS2 11EFS3 11EFS4 12BH11 12CC12 10-32UNF2A

    11ES2

    Abstract: 12JH11 15bl11 15CD11 11EFS1 11EFS2 11EFS3 11EFS4 12BG11 12BH11
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 15B015 15BL11 15CC11 12JH11 15bl11 15CD11 11EFS2 11EFS3 11EFS4 12BH11

    15CD11

    Abstract: 12CC12 12MF20 12GG11 15bl11 11EFS1 11EFS2 11EFS3 11EFS4 11ES2
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 15B015 15BL11 15CC11 15CD11 12CC12 12MF20 12GG11 15bl11 11EFS2 11EFS3 11EFS4

    11ES2

    Abstract: 11ES1 11ES4 11ES6 11ES8
    Text: llESl 11ES2 11ES4 11ES6 11ES8 1A /10 0 — 800V SILICON RECTIFIER DIODE FEATU R ES o Miniature Size MAX ULA ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.601024 DIA 0.54 .021) ° High Surge Capability 27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 11ES6 11ES8 LL1S123

    30KF60B

    Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
    Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166


    OCR Scan     		PDF 1N4001 1N4002 1N4004 1N4005 1N4006 1N4007 2VF10CT F20CT F30CT F40CT 30KF60B 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    11ES2

    Abstract: No abstract text available
    Text: SILICON RECTIFIER DIODE ÌA/IOO— 800V JJIII 11ES4 FEATURES ‘2.7 .106 dia . M A X U1A ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.6CH.024)nrA 0.54<.0211 ° High Surge Capability .27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF 11ES4 11ES1 11ES2 11ES4 11ES8 -25-C 11ES1- 11ES8