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    11D TRANSISTOR Search Results

    11D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    11D TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size


    Original     		PDF NSL12AW NSL12AW

    marking RJA

    Abstract: No abstract text available
    Text: NSL12AW Product Preview High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications 12 VOLTS 3.0 AMPS PNP TRANSISTOR Features: • • • • http://onsemi.com High Current Capability (3 A) High Power Handling (Up to 650 mW)


    Original     		PDF NSL12AW r14525 NSL12AW/D marking RJA

    marking PD

    Abstract: NSL12AW NSL12AWT1
    Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size


    Original     		PDF NSL12AW r14525 NSL12AW/D marking PD NSL12AW NSL12AWT1

    MOTOROLA 813 transistor

    Abstract: h11d1 motorola PD3007
    Text: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA T O VDE UL & CSA Order this document by H11D1/D •i SET SEMKO DEMKO NEMKO BABT H 11D 1* Glob al Optoi solator H11D2 6-Pin DIP Optoisolators High Voltage TVansistor Output 300 Volts [CTR =20% Min] "Motorola Preferred Device


    OCR Scan     		PDF H11D1/D H11D2 H11D1 H11D2 MOTOROLA 813 transistor h11d1 motorola PD3007

    H11D1

    Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
    Text: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,


    OCR Scan     		PDF H11D1 H11D3 E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, 30A-02 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883

    Transistor TT 2140

    Abstract: npn transistor w27 b24jf 251C M54526P bipolar power transistor driver circuit bipolar dc clamp
    Text: b 2 4 clflB 7 b3E D 0M 11D M IT S U B IS H I DGTL 51? H n iT 3 M ITSUBISHI BIPOLAR DIGITAL ICS M54526P LOGIC 7-U N IT 500m A DARLINGTON TR A N S IS TO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54526P, 7 -ch an n e l sink driver, consists of 14 N PN tran ­


    OCR Scan     		PDF Jfl27 M54526P M54526P, 500mA M54526P Transistor TT 2140 npn transistor w27 b24jf 251C bipolar power transistor driver circuit bipolar dc clamp

    MCT2E

    Abstract: H11A1 H24A1 H24A2 H24A3 H24A4 IS74 SFH609-1 SFH609-2 SFH609-3
    Text: ISOCOM COMPONENTS Photo Transistor General Purpose 4 and 6 Pin DIP Part Number Current Transfer Ratio If = 10mA Min % Features Contin u ou s Forw ard Current Max (m A) 20 4 Pin P a ckage 75 H24A 4 50 H11A1 50 350 0 IL2 NEW 30 ( If= 1m A) 750 0 100 IS1 3.0


    OCR Scan     		PDF I511C0M 16rnA H24A1 H24A2 H24A3 H24A4 H11A1 MCT2E H11A1 H24A1 H24A3 H24A4 IS74 SFH609-1 SFH609-2 SFH609-3

    transistor SMD 11d

    Abstract: 11D transistor Diode smd 11D J
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS* HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Packaqe Dimensions in Inches mm . • CTR at lF=10 mA, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation ♦ " I?1 fSlVl


    OCR Scan     		PDF H11D1/H11D2/H11D3 H11D1/2/3 transistor SMD 11d 11D transistor Diode smd 11D J

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFQ19S Q62702-F1088 OT-89 fl535b05 D1S2011 A235bD5

    kd 2902

    Abstract: No abstract text available
    Text: 2SA1455K V ~ 7 > v 7 > $ / 7 ransistors 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor * W E f iJ S * f iM i* 1 S f f l/H ig h Voltage Low Freq. Low Noise Amp. • h y > V ¿3/Dimensions Unit : mm 1) r a H E E T '£ > 3 0 V c E O = — 120V 2) N F = 0 .2 d B (Typ.)


    OCR Scan     		PDF 2SA1455K SC-59 2SA1455K kd 2902

    1301P

    Abstract: K1206 ldmos
    Text: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output


    OCR Scan     		PDF K1206 G-200, -877-GOLD 1301-PTE 1301P ldmos

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10107* 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10107 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2,0 GHz. It is rated at 5 watts minimum output power. Ion implantation, nitride


    OCR Scan     		PDF

    11D transistor

    Abstract: No abstract text available
    Text: SIEMENS H11 D1/H11 FEATURES • CTR at lp=10 mA.BVcERxlOV: 220% • Good CTR Linearity with Forward Currant • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage Phototransistor, 5.3 KV, TRÍOS High BVcer Voitage Optocoupler Dimensions in inches mm


    OCR Scan     		PDF D1/H11 H11D3/H11D4, E52744put 11D transistor

    Untitled

    Abstract: No abstract text available
    Text: r z 7 S G S -T H O M S O N ^ T # . IM O g M IlL J ir a R a D (g i A M 8 0 6 1 0 -0 3 0 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS • R E F R A C T O R Y /G O L D M ETA LLIZA T IO N ■ E M IT T E R S IT E B A LLA STED > IN P U T /O U T P U T M A T C H IN G


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum


    OCR Scan     		PDF P4917-N P5276

    2n60s

    Abstract: 2N6050 2N6057 2N6058
    Text: HA RR IS S E H I C O N D S E C T O R 5bE J> • 43Ü 2 27 1 Q Q M D M^ S 31fl Hi HA S 2N6050,2N6051,2N6052,2N6057,2N6058,2N6059 File Number lis a 7 = 3 3 - 0 / 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS


    OCR Scan     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 12-Ampere 2N6052) 2n60s

    Untitled

    Abstract: No abstract text available
    Text: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- C1774

    Untitled

    Abstract: No abstract text available
    Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V


    OCR Scan     		PDF SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 SN75469 ilbl724 DlD10b2

    TIL112

    Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 H11D1, H11D2, TIL112 MCA255

    BS0615N

    Abstract: smd diode marking code ug SMD diode KL 615N smd diode marking FG smd code marking book smd diode Mu smd code BS0 26APulsed BS0615
    Text: BSO 615N Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance ^DSion 0.15 ß • Avalanche rated Continuous drain current fc> 2.6 A


    OCR Scan     		PDF SIS000S8 Q67041-S2843 S35bG5 D133777 SQT-89 O-92-E6288 BS0615N smd diode marking code ug SMD diode KL 615N smd diode marking FG smd code marking book smd diode Mu smd code BS0 26APulsed BS0615

    BLF245

    Abstract: sot123 package VHF transistor amplifier circuit
    Text: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF245 OT123 -SOT123 MBAJ79 BLF245 sot123 package VHF transistor amplifier circuit

    BLF544B

    Abstract: 74649
    Text: Product specification Philips Sem iconductors bb£3^31i 0030137 0^2 M A P X UHF push-pull power MOS transistor N AMER PHILIPS/DISCRETE BLF544B b*îE D- PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		PDF BLF544B OT268 OT268 MCAS05 BLF544B 74649

    PIC1670

    Abstract: vending machine pic microcontroller PIN CONFIGURATION OF PIC1670 PIC1665
    Text: MICROCHIP TECHNOLOGY INC 22E D t.lG3501 OOQMTlfl 5 • -0 & M ic r o c h ip 8 Bit Microcontroller FEATURES PIN CONFIGURATION 40 Lead Dual In Line 1024 x 13-bit Program ROM 64 x 8-bit RAM 16 special purpose registers Arithmetic Logic Unit Sophisticated interrupt structure


    OCR Scan     		PDF lG3501 PIC1670 13-bit DS30003B-11 PIC1670 DS30003B-12 vending machine pic microcontroller PIN CONFIGURATION OF PIC1670 PIC1665

    H11AV1A

    Abstract: H11AV3 SL5504 507Q
    Text: — TH OM SO N/ DISTRIBUTOR SfiE D • T0Et.ñ?3 OQDS74fi 741 ■ TCSK Optoelectronic Products Optoisolators/Optocouplers T ype # D e s c rip tio n S u rg e Iso la tio n V o lta g e RMS M in Continued C u rre n t T ra n s fe r R a tio M in T y p ic a l (ps)


    OCR Scan     		PDF Wbfi73 H11AG1 H11AG2 H11AG3 H11AV1 H11AV1A H11AV2 H11AV2A H11AV3 H11AV3A H11AV1A H11AV3 SL5504 507Q