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    11A S81 Search Results

    11A S81 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBEE5XV2BZ-883 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    LBEE5ZZ2XS-846 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    UPA2754GR-E1-A Renesas Electronics Corporation Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2706GR(0)-E1-A Renesas Electronics Corporation Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2706GR-E1-AT Renesas Electronics Corporation Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8 Visit Renesas Electronics Corporation
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    11A S81 Price and Stock

    ABLIC Inc. S-817B11AMC-CWAT2U

    LDO Voltage Regulators 1.1V 1.2uA 2.0%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S-817B11AMC-CWAT2U 3,000
    • 1 $0.99
    • 10 $0.879
    • 100 $0.686
    • 1000 $0.447
    • 10000 $0.381
    		Buy Now

    ABLIC Inc. S-817B11AY-Z2-U

    LDO Voltage Regulators VOLTAGE REGULATOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S-817B11AY-Z2-U 1,812
    • 1 $0.86
    • 10 $0.747
    • 100 $0.573
    • 1000 $0.362
    • 10000 $0.294
    		Buy Now

    APEM Inc DPS8111AK2

    Thumbwheel Switches & Pushwheel Switches 1A 40VAC 40VDC Decimal
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DPS8111AK2
    • 1 $20.46
    • 10 $18.4
    • 100 $17.42
    • 1000 $17.42
    • 10000 $17.42
    		Get Quote

    ABLIC Inc. S-817B11AY-B2-U

    LDO Voltage Regulators 1.1V 1.2uA 2.0%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S-817B11AY-B2-U
    • 1 $0.86
    • 10 $0.747
    • 100 $0.573
    • 1000 $0.402
    • 10000 $0.364
    		Get Quote

    ABLIC Inc. S-817B11AUA-CWAT2U

    LDO Voltage Regulators 1.1V 1.2uA 2.0%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S-817B11AUA-CWAT2U
    • 1 $0.99
    • 10 $0.879
    • 100 $0.686
    • 1000 $0.446
    • 10000 $0.381
    		Get Quote
    Find more 11A S81 price and stock on Findchips.com

    11A S81 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFB11N50A

    Abstract: SiHFB11N50A SiHFB11N50A-E3
    Text: IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current


    Original     		PDF IRFB11N50A, SiHFB11N50A O-220 18-Jul-08 IRFB11N50A SiHFB11N50A-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current


    Original     		PDF IRFB11N50A, SiHFB11N50A O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements


    Original     		PDF IRFP26N60L, SiHFP26N60L O-247 12-Mar-07

    17AB

    Abstract: No abstract text available
    Text: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration


    Original     		PDF IRFPS29N60L, SiHFPS29N60L SUPER-247TM 12-Mar-07 17AB

    Untitled

    Abstract: No abstract text available
    Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration


    Original     		PDF IRFP21N60L, SiHFP21N60L O-247 12-Mar-07

    SiHFP21N60L

    Abstract: IRFP21N60L
    Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration


    Original     		PDF IRFP21N60L, SiHFP21N60L O-247 18-Jul-08 IRFP21N60L

    SiHFPS29N60L

    Abstract: ISD 1820 P dt-830 IRFPS29N60L SiHFPS29N60L-E3
    Text: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration


    Original     		PDF IRFPS29N60L, SiHFPS29N60L SUPER-247TM 18-Jul-08 ISD 1820 P dt-830 IRFPS29N60L SiHFPS29N60L-E3

    IRFP26N60

    Abstract: IRFP26N60L SiHFP26N60L ktp12
    Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements


    Original     		PDF IRFP26N60L, SiHFP26N60L O-247 18-Jul-08 IRFP26N60 IRFP26N60L ktp12

    IRFP21N60L

    Abstract: SiHFP21N60L
    Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration


    Original     		PDF IRFP21N60L, SiHFP21N60L O-247 18-Jul-08 IRFP21N60L

    Untitled

    Abstract: No abstract text available
    Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration


    Original     		PDF IRFP21N60L, SiHFP21N60L 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements


    Original     		PDF IRFP26N60L, SiHFP26N60L 2002/95/EC O-247AC 11-Mar-11

    s8192

    Abstract: No abstract text available
    Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration


    Original     		PDF IRFP21N60L, SiHFP21N60L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8192

    Untitled

    Abstract: No abstract text available
    Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements


    Original     		PDF IRFP26N60L, SiHFP26N60L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfd9020

    Abstract: No abstract text available
    Text: IRFD9020, SiHFD9020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dv/dt Rating VDS V - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 Available RoHS* • For Automatic Insertion


    Original     		PDF IRFD9020, SiHFD9020 18-Jul-08 irfd9020

    MS1022

    Abstract: No abstract text available
    Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching


    Original     		PDF IRFP460, SiHFP460 O-247 O-247 12-Mar-07 MS1022

    IRFP460

    Abstract: irfp460pbf IRFP460 application irfp460 datasheet SiHFP460 irfp460 mosfet
    Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching


    Original     		PDF IRFP460, SiHFP460 O-247 O-247 18-Jul-08 IRFP460 irfp460pbf IRFP460 application irfp460 datasheet irfp460 mosfet

    IRFP23N50L

    Abstract: SiHFP23N50L 91209 irfp23n50
    Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		PDF IRFP23N50L, SiHFP23N50L O-247 18-Jul-08 IRFP23N50L 91209 irfp23n50

    Untitled

    Abstract: No abstract text available
    Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		PDF IRFP23N50L, SiHFP23N50L O-247 12-Mar-07

    IRFP460 application

    Abstract: IRFP460PBF irfp460 mosfet IRFP460 SiHFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix
    Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching


    Original     		PDF IRFP460, SiHFP460 O-247 O-247 11-Mar-11 IRFP460 application IRFP460PBF irfp460 mosfet IRFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix

    SIHG20N50C

    Abstract: No abstract text available
    Text: SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr


    Original     		PDF SiHG20N50C O-247AC 2002/95/EC O-247AC SiHG20N50C-E3 SiHG20N50C-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested


    Original     		PDF SiHG22N60S O-247AC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIHG20N50C

    Abstract: No abstract text available
    Text: SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr


    Original     		PDF SiHG20N50C O-247AC 2002/95/EC O-247AC SiHG20N50C-E3 SiHG20N50C-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching


    Original     		PDF IRFP460, SiHFP460 O-247 O-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    203A14

    Abstract: bcr12 PD4361 19A6 11a s81 uPD4361B
    Text: JJPD4361B 65,536 X 1-bit Static CMOS RAM L ~ Æ lé \ * NEC Electronics Inc. Description Pin Configurations The /JPD4361B is a 65,536-word by 1-bit static RAM fab ric a te d w ith advanced silicon-gate technology. CM O S peripheral circuits and N-channel m em ory cells


    OCR Scan     		PDF uPD4361B /JPD4361B 536-word 22-pin 24-pin PD4361B 203A14 bcr12 PD4361 19A6 11a s81