DSW16186
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. DSW16186 8 - 12 GHz 70 dB Isolation 1.4dB Insertion Loss 30 nSec Switching Speed TTL Control Replaceable SMA Connectors SPST P IN Dio d e SPS T CLEARANCE FOR .118DIA REF .30 .10 TYP .079 DIA 4 HOLES +.004 -.002 .35 2. "1" C1 2-56 X.12 LONG
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DSW16186
118DIA
001DIA
DSW16186
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X209
Abstract: U166 U411
Text: 1200 series Momentary pushbutton switches - round plunger Distinctive features and specifications UG1006-A ❑ Butt action contacts, double break ❑ NF EN 61058-1 , UL and CSA approved B ELECTRICAL SPECIFICATIONS MATERIALS • Max. current/voltage rating with resistive load :
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UG1006-A
250VAC
125VAC
24VDC
12VDC
125VAC
500VDC
X209
U166
U411
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54-TSOP
Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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256MB,
512MB,
168pin
512Mb
62/72-bit
54-TSOP
K4S511632B
M366S2953BTS-C7A
M366S3354BTS-C7A
M366S6553BTS-C7A
M374S2953BTS-C7A
M374S6553BTS-C7A
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M366S6453DTS
Abstract: No abstract text available
Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S6453DTS
PC133/PC100
M366S6453DTS
64Mx64
32Mx8,
400mil
168-pin
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M366S0924ETS-C7A
Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002
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128MB,
256MB
168pin
128Mb
62/72-bit
M366S0924ETS-C7A
M366S1723ETS-C7A
M366S1723ETU-C7A
M366S3323ETS-C7A
M366S3323ETU-C7A
M374S1723ETS-C7A
M374S1723ETU-C7A
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b1a12
Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit
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PC133/100
M390S2950MTU
M390S2950MTU
128Mx72
128Mx4,
128Mx4
400mil
18bits
b1a12
M390S2950MTU-C1H
M390S2950MTU-C1L
M390S2950MTU-C75
PC133 registered reference design
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M374S6453CTS
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M374S6453CTS
M374S6453CTS
64Mx72
32Mx8,
400mil
168-pin
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M390S3320DT1-C7A
Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range
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PC133
M390S3320DT1
M390S3320DT1
32Mx72
32Mx4,
M390S3320DT1-C7C
24-pin
133MHz
M390S3320DT1-C7A
M390S3320DT1-C7A
M390S3320DT1-C7C
PC133 registered reference design
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K4S280832C-TC75
Abstract: M374S1723CTS
Text: M374S1723CTS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 2000 • PC133 first published. Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. REV. 0.1 July. 2000 M374S1723CTS PC133 Unbuffered DIMM
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M374S1723CTS
PC133
PC100
M374S1723CTS
16Mx72
16Mx8,
K4S280832C-TC75
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M374S3253ATS
Abstract: M374S3253CTU
Text: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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M374S3253CTU
PC133/PC100
M374S3253ATS
32Mx72
32Mx8,
M374S3253CTU
400mil
168-pin
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M390S2858DTU
Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked
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M390S2858DTU
PC133/PC100
M390S2858DTU
128Mx72
128Mx4,
128Mx4
400mil
18-bits
M390S2858DTU-C1H
M390S2858DTU-C1L
M390S2858DTU-C7A
M390S2858DTU-C7C
10D4L
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous
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PC133/PC100
M374S6453DTS
M374S6453DTS
64Mx72
32Mx8,
400mil
168-pin
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M366S1623DT0
Abstract: M366S1623DT0-C75 K4S640832D-TC75
Text: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.
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M366S1623DT0
PC133
PC100
M366S1623DT0
16Mx64
M366S1623DT0-C75
K4S640832D-TC75
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M377S2953MT3
Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit
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PC100
M377S2953MT3
M377S2953MT3
128Mx72
64Mx8,
64Mx8
400mil
18bits
M377S2953MT3-C1H
M377S2953MT3-C1L
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b1a12
Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
Text: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit
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M390S6450DTU
PC133/PC100
M390S6450DTU
64Mx72
64Mx4,
64Mx4
400mil
18bits
b1a12
M390S6450DTU-C7A
M390S6450DTU-C1H
M390S6450DTU-C1L
M390S6450DTU-C7C
PC133 registered reference design
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M390S6453DT1
Abstract: M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design
Text: PC133 Registered DIMM M390S6453DT1 M390S6453DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S6453DT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133
M390S6453DT1
M390S6453DT1
64Mx72
32Mx8,
32Mx8
400mil
18-bits
M390S6453DT1-C7A
M390S6453DT1-C7C
PC133 registered reference design
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M390S3253CTU
Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
Text: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous
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M390S3253CTU
PC133/PC100
M390S3253CTU
32Mx72
32Mx8,
32Mx8
400mil
18-bits
M390S3253CTU-C1H
M390S3253CTU-C1L
M390S3253CTU-C7A
M390S3253CTU-C7C
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous
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PC133/PC100
M374S6453DTS
M374S6453DTS
64Mx72
32Mx8,
400mil
168-pin
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AV22LC
Abstract: av0630c9 cav9 av47 AV3002F
Text: AV series Anti-vandal and security pushbutton switches Distinctive features UG1006-A-R2 ❑ Attractive, robust and durable • Irremovable • Anti-jamming construction : reduced travel to prevent insertion of foreign parts • Contact and mechanism protected against crushing
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UG1006-A-R2
IP69K
U2187
181x1
AV22PNA
866DIAX1
181DIA)
AV22PNA
B-158
AV22LC
av0630c9
cav9
av47
AV3002F
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DTM60149
Abstract: DTM60151 DTM60153 DTM60155 16Mx64 60153
Text: DTM60149, 60151, 60153, 60155 128MB-16M x 64/72, 168-Pin Unbuffered SDRAM DIMMS Identification DTM60149:16Mx64 DTM60151:16Mx64 DTM60153:16Mx72 DTM60155:16Mx72 PC100 PC133 PC100 PC133 Performance range PC100=100MHz 10ns@CL=2 PC133=133MHz(7.5ns@CL=3) Features
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DTM60149,
128MB-16M
168-Pin
DTM60149
16Mx64
DTM60151
DTM60153
16Mx72
DTM60155
16Mx64
60153
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pc133 SDRAM DIMM
Abstract: PC133 registered reference design DTM60158
Text: DTM60158 128MB-16M x 72, 168-Pin Registered PC133 SDRAM DIMM Identification Part Number:DTM60158 Performance range 1 33M H z 7.5ns@ CL=3 Features Description Burst mode operation The Dataram DTM60158 is a registered 16Mx72 Synchronous Dynamic RAM high density memory module. The
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DTM60158
128MB-16M
168-Pin
PC133
DTM60158
16Mx72
16Mx8bit
16Mx4bit
pc133 SDRAM DIMM
PC133 registered reference design
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M366S0824ET0
Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
Text: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC100
M366S0824ET0
M366S0824ET0
8Mx64
4Mx16,
400mil
168-pin
M366S0824ET0-C1H
M366S0824ET0-C1L
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B6667RB
Abstract: ADABC2608
Text: A-Data ADABC2608 Revision History Revision 1 Dec. 2001 1.Fister release. Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. Changed Pin Assignment. 3. Changed AC Characteristics. 4. Changed typo size on module PCB in package dimensions.
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ADABC2608
PC-133
16Mx64bits
8Mx16,
ADABC2608
16Mx64
8Mx16
400mil
54pin
B6667RB
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M390S3320DT1
Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133
M390S3320DT1
M390S3320DT1
32Mx72
32Mx4,
32Mx4
400mil
18-bits
M390S3320DT1-C7A
M390S3320DT1-C7C
PC133 registered reference design
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