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    113 SOT23 Search Results

    113 SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
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    113 SOT23 Price and Stock

    Linear Integrated Systems SST113 SOT-23 3L ROHS

    JFET N-CH 35V SOT23-3
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    DigiKey SST113 SOT-23 3L ROHS Reel 6,000 3,000
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    SST113 SOT-23 3L ROHS Cut Tape 1,194 1
    • 1 $2.97
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    • 100 $2.018
    • 1000 $1.53591
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    SST113 SOT-23 3L ROHS Digi-Reel 1
    • 1 $2.97
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    Renesas Electronics Corporation ISL28113SOT23EVAL1Z

    EVALUATION BOARD FOR ISL28113
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    DigiKey ISL28113SOT23EVAL1Z Box 1
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    Avnet Americas ISL28113SOT23EVAL1Z Box 18 Weeks 1
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    Mouser Electronics ISL28113SOT23EVAL1Z
    • 1 $69.43
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    Linear Integrated Systems SST113-SOT-23

    N-CH JFET Switches
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    NAC SST113-SOT-23 Reel 14,540 1
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    113 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD IC sot23-5 5K

    Abstract: No abstract text available
    Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE


    Original     		PDF TSH110-111-112-113-114 100MHz OT23-5, TSH110 OT23-5 TSH111 TSH110 TSH111, TSH112, TSH113 SMD IC sot23-5 5K

    copper bonding wire

    Abstract: No abstract text available
    Text: PCN #: 113 Notification Date: 25 May 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Extent of Change:


    Original     		PDF OD-123, OT-23, OT-323 copper bonding wire

    TSH110

    Abstract: TSH111 TSH112 TSH113 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114
    Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE


    Original     		PDF TSH110-111-112-113-114 100MHz TSH110 OT23-5 OT23-5, TSH111 TSH110 TSH111, TSH112, TSH113 TSH111 TSH112 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114

    identification code c3 SOT23-5

    Abstract: TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14
    Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE SLEW-RATE: 450V/µs


    Original     		PDF TSH110-111-112-113-114 100MHz TSH110 OT23-5 OT23-5, TSH111 TSH110 TSH111, TSH112, TSH113 identification code c3 SOT23-5 TSH111 TSH112 TSH114 TSSOP14

    SOT23-6

    Abstract: 02 SOT23-6
    Text: SOT23-6 Thermal Resistance and Derating Information SOT23-6 1.1W devices j-a=113°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1


    Original     		PDF OT23-6 OT23-6 SOT23-6 02 SOT23-6

    SKH122

    Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
    Text: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300


    Original     		PDF SAB-C505C-LM: SAB-C515C-LM: SAB-C167CR-LM: 16-bit SAE81C90-N: SAE81C91-N: SAB-C504-LM: BTS149: BSP350: BSP452: SKH122 SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v

    ZD 103 ma

    Abstract: LT/SG3527A op292g AD8436
    Text: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004


    Original     		PDF AD8534 SC705 OT-235 ST07377- ZD 103 ma LT/SG3527A op292g AD8436

    RB111C

    Abstract: 2SK195 2.gND 4.NC sot-23-5 m 2SD1628 2SK1470 2SK2054 CD104 CD54 CD73 RN5RY202
    Text: Tr 外付けタイプVFM 昇圧 DC/DC コンバータ NO. JK-113-9803 RN5RY202 • 概要 RN5RY202 はCMOS プロセス技術を用いて開発したVFM（チョッパ）制御型高精度、低消費電流のパワートラ ンジスタ外付けタイプの昇圧 DC/DC コンバータ用制御 IC で、基準電圧源、誤差増幅器、発振回路、VFM コントロー


    Original     		PDF JK-113-9803 RN5RY202 RN5RY202 50ppm/ OT-23-5 20VOUT2 RN5RY202A-TR RB111C 2SK195 2.gND 4.NC sot-23-5 m 2SD1628 2SK1470 2SK2054 CD104 CD54 CD73

    complementary npn-pnp power transistors

    Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6

    TS16949

    Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
    Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC2063E6TA D-81541 TS16949 ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6

    complementary npn-pnp power transistors

    Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
    Text: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6mbH D-81541

    DIODES 11W

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W

    DUAL NPN SOT23-6

    Abstract: NPN SOT23-6 connection diagram TC* SOT23-6 e-line 113
    Text: Packages & Thermal Data Packages SOT23 Connection diagram Taping options: Part no. suffixed TA = 3k devices per 7’‘ reel Part no. suffixed TC = 10k devices per 13’‘ reel Top view Connection diagrams SOT23-6 C B E N/C Anode Cathode Single Taping options:


    Original     		PDF OT23-6 OT223 OD323 625mW 625mW) OT23-6 DUAL NPN SOT23-6 NPN SOT23-6 connection diagram TC* SOT23-6 e-line 113

    ZXTC2062E6

    Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 ZXTC2062E6 TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp

    apx transistor

    Abstract: No abstract text available
    Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A


    OCR Scan     		PDF bbS3T31 00Z353T BF545A; BF545B; BF545C BF545A BF545B apx transistor

    Untitled

    Abstract: No abstract text available
    Text: 113 Surface M ount Devices Zener Diodes, SOT-23 350mW , Pinout H (cont.) Zener Impedance ^Z (Nom)* @ IZT lR (Max) Temperature Coefficient Zzk (Max) Zr t (Max) *ZK= 0-25mA @VR Type (V) @ <z (mA) ft (mA) (ft) 0vz (Max) (%/°C) (txA) (V) PMBZ5241B PMBZ5242B


    OCR Scan     		PDF OT-23 350mW) 0-25mA PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


    OCR Scan     		PDF Q0EMS73 bbS3031 003457b

    BB453

    Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
    Text: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V


    OCR Scan     		PDF BF545Ai BF545B5 BF545C BF545A) BF545A BF545A BF545B MBB471 BB453 BF5458 D103D BF545C MSB003 UBB467 SFs SOT23 dk transistor

    el 847

    Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
    Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j


    OCR Scan     		PDF t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12

    Bsv80

    Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78


    OCR Scan     		PDF BSV78 BSV79 BSV80 BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 Bsv80 2N4092 2N4392 Philips J176 PMBF PMBFJ174

    F20M

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage


    OCR Scan     		PDF FMMT458 100mA, r100V F20M

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Semiconductors # SOT23 TO 18 2 lead T018 (3 lead) ^ TOS2 T072 TO92 (2 lead) ^ T092(31ead) JFETs - N-Channel JFET Analog Switches Break­ down Voltage Mm i \ i “ VS i f .5 » . ¡ i f * , • fe ’ (Q> Min \b x Min J 105 3 ^ .5 -10 500 -20 J106


    OCR Scan     		PDF 31ead) T0226AA PN4391 PN4392 PN4393 T0236 IT0206AA T0206AC 2N5432 2N5433

    bss69r

    Abstract: No abstract text available
    Text: BSS69 BSS70 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS69 - L2 BSS70 - L3 BSS69R - L6 BSS70R - L7 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT V V v CBO -4 0 C o lle cto r-E m itte r V oltag e V CEO -4 0 E m itter-B ase V o lta g e


    OCR Scan     		PDF BSS69 BSS70 BSS69 BSS70 BSS69R BSS70R CHARAC80