xmxx
Abstract: yageo Phycomp 2322 711
Text: Product specification – Jul 02, 2009 V.4 Supersedes Date of Mar. 06, 2003 1100 DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC1206 5%, 1% RoHS compliant Product specification Chip Resistor Surface Mount RC SCOPE ORDERING INFORMATION - GLOBAL PART NUMBER & 12NC
|
Original
|
PDF
|
RC1206
RC1206
RC22H)
9C06031A10R0FKHFT
xmxx
yageo Phycomp 2322 711
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for W- CDMA base station applications with frequencies from 2110
|
Original
|
PDF
|
MRF21125R3
MRF21125SR3
|
EPA2116G
Abstract: No abstract text available
Text: 10Base-T Interface Module with Enhanced CMA and Resistor Network ELECTRONICS INC. EPA2116G • Optimized for AMD/PHY controllers • • Robust construction allows for IR/VP processes • • Complies with or exceeds IEEE 802.3, 10Base-T Requirements • Electrical Parameters @ 25° C
|
Original
|
PDF
|
10Base-T
EPA2116G
EPA2116G.
CSA2116Gb
EPA2116G
|
EPE6119G-RC
Abstract: jd 1803 jd 1803 data jd 1803 19 B EPF8125S BCM5201 jd 1803 4 pin EPG4000S EPA1885-6 EPE6119G
Text: Networking www.pca.com Contents 10Base-T Networking PCA Part No. OCL µH EPA1829C EPA1990A 200 EPA2013D Turns Ratio Package Style Length Width Height 1:1/1:1 16 Pin DIP 1.00 .400 .350 1:1/1:1 16 Pin DIP 1.00 .280 .300 1:1/1:1 16 Pin DIP 1.00 .280 .310 EPE6009S
|
Original
|
PDF
|
10Base-T
EPA1990A
EPA2013D
EPA1829C
EPE6009S
EPE6010S
EPE6047S
EPE6065AS
EPE6051GM
EPE6066
EPE6119G-RC
jd 1803
jd 1803 data
jd 1803 19 B
EPF8125S
BCM5201
jd 1803 4 pin
EPG4000S
EPA1885-6
EPE6119G
|
rn73 Meggitt
Abstract: No abstract text available
Text: MEGGITT HOLSWORTHY HYBRID CIRCUITS ELECTRONIC ASSEMBLIES PRECISION RESISTORS SMD PRECISION RESISTORS PRECISION NETWORKS High Precision Resistors SMD TYPE RN73 SERIES Sputtered Resistive Metal Film Protective Coat Epoxy Terminations (Nickel & Solder Plating)
|
Original
|
PDF
|
10ppm/
rn73 Meggitt
|
transistor c 5936 circuit diagram
Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a
|
Original
|
PDF
|
AT-32063
AT-320XX
OT-363
SC-70)
AT-32063,
5966-0781E
transistor c 5936 circuit diagram
c 2073 amplifier circuit diagram
D2030
18 sot-363 rf power amplifier
S2PB
|
VJ HIFREQ
Abstract: WSBM8518
Text: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 Proximity Sensor with I2C Interface WSBM8518 Power Metal Strip Battery Shunt Resistor with Molded Enclosure
|
Original
|
PDF
|
com/ref/2013s12
VCNL3020
WSBM8518
IHLP-6767GZ-5A
VMN-MS6782-1302
VJ HIFREQ
WSBM8518
|
transistor BD 139
Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a
|
Original
|
PDF
|
AT-32063
AT32063
AT-320XX
OT-363
SC-70)
AT-32063,
transistor BD 139
AP 1100 R1
darlington cascode second stage
transistor AT-320 agilent
|
darlington cascode second stage
Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors
|
Original
|
PDF
|
AT-32063
AT-32063
AT-320XX
OT-363
SC-70)
AT-32063,
5966-0781E
darlington cascode second stage
transistor AT-320 agilent
Transistor W03 56
A1T TRANSISTOR
d2030
|
40MHZ
Abstract: ADL5358XCPZ-R7 ADL5358XCPZ-WP ADL5365 ADL5358 TC4 pre amp
Text: Dual 500-1700MHz Balanced Mixer with LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 500MHz to 1700MHz IF Frequency 40MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB
|
Original
|
PDF
|
500-1700MHz
ADL5358
500MHz
1700MHz
40MHZ
350MHz
10dBm
26dBm
ThR11
ADL5358XCPZ-R7
ADL5358XCPZ-WP
ADL5365
ADL5358
TC4 pre amp
|
Untitled
Abstract: No abstract text available
Text: Document Number: MRF5S4125N Rev. 0, 1/2007 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with
|
Original
|
PDF
|
MRF5S4125N
MRF5S4125NR1
MRF5S4125NBR1
MRF5S4125NR1
|
AD250
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of
|
Original
|
PDF
|
MRF5S4125N
IS--95
MRF5S4125NR1
MRF5S4125NBR1
AD250
|
MRF5S4125NBR1
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S4125NR1 ATC600B121BT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRF5S4125N Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with
|
Original
|
PDF
|
MRF5S4125N
MRF5S4125NR1
MRF5S4125NBR1
MRF5S4125NR1
MRF5S4125NBR1
A113
A114
A115
AN1955
C101
JESD22
ATC600B121BT250XT
|
Untitled
Abstract: No abstract text available
Text: Dual 900MHz Balanced Mixer with High Side LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 700MHz to 1000MHz IF Frequency 50MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB
|
Original
|
PDF
|
700MHz
1000MHz
50MHZ
350MHz
10dBm
26dBm
900MHz
ADL5358
ADL5358
|
|
|
J280
Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH
Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with
|
Original
|
PDF
|
MRF8S19140H
MRF8S19140HR3
MRF8S19140HSR3
MRF8S19140HR3
J280
MRF8S19140H
C1825C564J5RACTU
J296
J589
MRF8S19140HS
mrf8s19140
ATC800B
AN1955
MCRH63V337M13X21-RH
|
HBPF-0420
Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420
|
Original
|
PDF
|
HBFP-0405
HBFP-0420
SC-70
OT343)
HBPF-0420
SOT343 C5
W04 transistor
Transistor W06
transistor w04
|
w06 transistor
Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface
|
Original
|
PDF
|
HBFP-0405
HBFP-0420
HBFP-0420
SC-70
OT-343)
HBFP0420
w06 transistor
Transistor W06
W04 transistor
w04 transistor sot 23
w02 transistor sot 71
transistor sot w04
W04 sot 23
W02 sot 23
W02 transistor
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
|
Original
|
PDF
|
MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
|
Untitled
Abstract: No abstract text available
Text: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
|
Original
|
PDF
|
BGA751N7
|
T491C105K050AT
Abstract: A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
|
Original
|
PDF
|
MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
T491C105K050AT
A114
A115
AN1955
C101
JESD22
MRF7S21110HSR3
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
|
Original
|
PDF
|
MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
|
mcr63
Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
|
Original
|
PDF
|
MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
mcr63
T491C105K050AT
A114
A115
AN1955
C101
JESD22
MRF7S21110HSR3
mcr63v477m
|
1100 CHIP RESISTOR NETWORK
Abstract: No abstract text available
Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 Layout Features ♦ ♦ ♦ V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction
|
Original
|
PDF
|
MA4SW610B-1
MA4SW610B-1
1100 CHIP RESISTOR NETWORK
|
4an4
Abstract: IM 153 qsop 16 pcb footprint M50Vm
Text: In-line surface mount resistor networks • Very high density packaging Smallest thick film network available Saves board space • Low profile • Solid ceramic construction Dendrite free Higher power •"V". • Custom circuits available • Input/outputs available
|
OCR Scan
|
PDF
|
UL94VO
not3900
181A191A;
ORKS/406
4an4
IM 153
qsop 16 pcb footprint
M50Vm
|
