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LeaderTech 83-CBSA-1.0X1.5X0.8 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	83-CBSA-1.0X1.5X0.8	Bulk			20	1 - 10 - 100 $18.1865 1000 $18.1865 10000 $18.1865	Buy Now
LeaderTech 85-CBSA-1.0X1.5X0.8 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	85-CBSA-1.0X1.5X0.8	Bulk			20	1 - 10 - 100 $17.5755 1000 $17.5755 10000 $17.5755	Buy Now
LeaderTech 48-CBSA-1.0X1.5X0.4 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	48-CBSA-1.0X1.5X0.4	Bulk			20	1 - 10 - 100 $17.6095 1000 $17.6095 10000 $17.6095	Buy Now
LeaderTech 53-CBSA-1.0X1.5X0.5 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	53-CBSA-1.0X1.5X0.5	Bulk			20	1 - 10 - 100 $17.6095 1000 $17.6095 10000 $17.6095	Buy Now
LeaderTech 80-CBSA-1.0X1.5X0.8 RF SHIELD 1" X 1.5" SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	80-CBSA-1.0X1.5X0.8	Bulk			20	1 - 10 - 100 $18.096 1000 $18.096 10000 $18.096	Buy Now

Find more 10X15X0 price and stock on Findchips.com

10X15X0 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2570 Abstract: 2sc2570 transistor NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,	OCR Scan	NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
Bluetooth Energy Meter ckt diagram Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11 Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3	Original	FD501 FD504 FD502 FD503 Bluetooth Energy Meter ckt diagram 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11	PDF
8F157 Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D	PDF
2SC1424 Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS	Original	NE734 NE73435) NE734 OT-143) 24-Hour 2SC1424 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE73400 NE73416	PDF
VT8362 Abstract: CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0 Text: 7321 7321 N/B Maintenance Contents Contents 1. Hardware Engineering Specification 4 1.1 Introduction 4 1.2 System Hardware Parts 1.3 Other Functions	Original	FD500 DOT040 DOT040 PC500 PR500 FD503 FD502 VT8362 CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0	PDF
OCI 531 Abstract: No abstract text available Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION	OCR Scan	NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531	PDF
2SC1424 Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F	OCR Scan	NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185	PDF
2SC2570 Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135 Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135	PDF
Micro-X Marking 865 Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F	PDF
s-parameter s11 s12 s21 Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431	PDF
JF11 Abstract: NE02133-T1B Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression	OCR Scan	NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11	PDF
SAA 1006 Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression	OCR Scan	NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K	PDF
NE02135 Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR	PDF

NE021 microwave oscillator Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225	PDF
NE02107 Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 07/07B NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 NE02107 2SC2149 2SC2351 NE02100 NE02133 NE02135 NE02139 18752 60S12	PDF
1734471 Abstract: No abstract text available Text: 30.48 = h•<d■ ’d" ro r-. 1.27 X 24 4 9 . 5 f i+ 0 . 0 5 Tu 48.56 0.30 / 0.75 o CH I CM tj CL ^ CM LO o o -H TYP CJ CD _ i CL Ò -a CM O LO 00 0.75 NOTE: _ LI I I —ri 1. MATERIAL: HOUSING: HIGH TEMP. THERMOPLASTIC UL 9 4 V -0 , COLOR: WHITE. CONTACTS: BRASS.	OCR Scan		PDF
2SC1424 Abstract: 2SC4090 017 545 71 32 02 2SC2026 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF	OCR Scan	NE73435) NE734 NE73400) S12S21\| 2SC1424 2SC4090 017 545 71 32 02 2SC2026	PDF
TX38D85VC1CAA Abstract: SD6109 DIODE S3V 81 SiS900 lan 30-pin connector for LVDS hannstar foxconn s3v83 qe r542 orion crt monitor circuit diagram MITAC MPU Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7521 Plus/N BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC AUG. 2001 7521Plus / N N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification - 3	Original	7521Plus TX38D85VC1CAA SD6109 DIODE S3V 81 SiS900 lan 30-pin connector for LVDS hannstar foxconn s3v83 qe r542 orion crt monitor circuit diagram MITAC MPU	PDF
2SC1424 Abstract: s2l sot23 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF	OCR Scan	NE73435) NE734 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) PACKAGEOUTUNE39 2SC1424 s2l sot23	PDF
2sc2570 transistor Abstract: t0-t01 2sc2570 NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 1 8 .5 d B at 5 0 0 M H z • LOW NOISE FIGURE: 1 .5 dB a t 5 0 0 M H z • HIGH POWER GAIN: 12 d B at 2 G H z • LARGE DYNAMIC RANGE: 19 d B m at 1 dB ,	OCR Scan	NE021 OT-23) 2sc2570 transistor t0-t01 2sc2570 NE02132	PDF
23STYLE Abstract: No abstract text available Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION	OCR Scan	NE73435) NE734 NE73400) NE73400 OT-323) OT-23) 23STYLE	PDF

10X15X0 Search Results

10X15X0 Price and Stock

LeaderTech 83-CBSA-1.0X1.5X0.8

LeaderTech 85-CBSA-1.0X1.5X0.8

LeaderTech 48-CBSA-1.0X1.5X0.4

LeaderTech 53-CBSA-1.0X1.5X0.5

LeaderTech 80-CBSA-1.0X1.5X0.8

10X15X0 Datasheets Context Search

2SC2570

SVI 3104 c

Bluetooth Energy Meter ckt diagram

8F157

2SC1424

VT8362

OCI 531

2SC1424

2SC2570

Micro-X Marking 865

s-parameter s11 s12 s21

JF11

SAA 1006

NE02135

NE021 microwave oscillator

NE02107

1734471

2SC1424

TX38D85VC1CAA

2SC1424

2sc2570 transistor

23STYLE