54AC153

Contextual Info: 54AC153 • 54ACT153 Dual 4-Input Multiplexer General Description Features The ’AC/’ACT153 is a high-speed dual 4-input multiplexer with common select inputs and individual enable inputs for each section. It can select two lines of data from four sources. The two buffered outputs present data in the true

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).

Contextual Info: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae

Contextual Info: BC237S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTE0NICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS a t Tan*=25*C Symbol Rating Characteristic Collector-Emitter Voltage Colfector-Eoatter Voltage

Contextual Info: 2SA1048 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA AUDIO FREQUENCY AMPLIFIER APPLICATION * * * * Complement To2SC2458 Collector-Emitter Voltage: Vce=-50V. High Hfe And Good Linearity Low Noise: NF=1 dB TYR , 10dB(Max*)

Contextual Info: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).

Contextual Info: FORWARD INTCENAHONAl ELECTRONICS LTD, S9016 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE * High Total power dissipation. Pt=400mW ABSOLUTE MAXIMUM RATINGS a t Tamb=2$°C C haracteristic Symbol R ating

S9011* transistor

Abstract: S9011 BVCBO-50V
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID. S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS at Tan*F=25#C Characteristic Symbol Rating Unit

ON769

Abstract: CLC432AJP
Contextual Info: CLC431/432 Dual Wideband Monolithic Op Amp with Disable General Description Features The CLC431 and CLC432 current-feedback amplifiers provide wide bandwidths and high slew rates for applications where board density and power are key considerations. These amplifiers provide DC-coupled small signal bandwidths exceeding 92MHz while consuming only 7mA per

voltage reference IC LM129

Abstract: home electronic projects schematic zener LM329 lm329 LM329d PIN DIAGRAM LM129 National Discrete Products
Contextual Info: LM129/LM329 Precision Reference General Description The LM129 and LM329 family are precision multi-current temperature-compensated 6.9V zener references with dynamic impedances a factor of 10 to 100 less than discrete diodes. Constructed in a single silicon chip, the LM129 uses

Contextual Info: tgr P BC547 SEM ICO N D U CTO R FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER * Complement to Package: TO-92 Bc557 a ABSOLUTE MAXIMUM RATINGS a t T iin*=25'C C haracteristic Symbol Rating

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID . S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tanft^25°C Symbol Rating Characteristic Vcbo Collector-Base Voltage

Contextual Info: KTC3203 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID. ~~ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT APPLICATION. Package: TO-92 FEATURE ♦Complementary toKTA1271 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Characteristic Symbol Rating

Contextual Info: 2SB772 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA PNP H>ITAXIAL SILICON TRANSISTOR HIGH CURRENT LOW VOLTAGE TRANSISTOR Package: TO-92 FEATURES ♦High current output up to 3A ♦Low satuatkm voltage ♦Complement to 2SD882 APPLICATIONS

Contextual Info: fr | FORWARD INTERNATIONAL ELECTRONICS LTD, BC182 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tairib=25‘c Symbol Vcbo R ating Unit 60 Vceo 50 V V Vebo 6 V Collector Diss^ation Ic Pc 100

Contextual Info: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW

Contextual Info: | a B C 338 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Package: TO-92 * Suitable For AF-Driver Stages And Low Power Output Stages * Complement to Bc328 a ABSOLUTE MAXIMUM RATINGS at Tamb=25'C

Contextual Info: 14055455 OODTIOT T 1 ”' T -2-S -27 IN TE RN AT IONAL RE CTIFIER IO R in t e r n a t io n a l -DE 1 4055455 Data Sheet No. PD-3.173 r e c t if ie r S52KF SERIES 1200-1000 VOLTS RANGE STANDARD TURN-OFF TIME 20 / j s 1590 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs

transistor S9011

Abstract: S9011 S9011 npn S9011* transistor FORWARd International Transistor S9011 characteristics
Contextual Info: I e FORWARD INTERNATIONAL ELECTRONICS LID . S9011 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER , AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at T r a M ^ C Characteristic Symbol Rating Collector-Base Volage

Contextual Info: S9014 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPUFIER*LOW LEVEL&LOW NOISE Package: TO-92 * * * * * Com plem ent To S9015 C ollector C urrent :Ic= 100mA C ollector-Em itter Voltage: V ce=45Y

Contextual Info: 2SB1237 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Features. * Low VCE,;^, , VCE^ggjj =-0.2V Typ.) (Ic/Ib=-500mA/-50mA) * Complement to 2SD1858 ABSOLUTE M AXIMUM RATINGS at Tinr*=25°C

s9011

Abstract: S9011* transistor
Contextual Info: S9011 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER , AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T an*=25'c Characteristic Symbol Raring Collector-Base Voltage