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    10N60B2D1 Price and Stock

    IXYS Corporation IXSH10N60B2D1

    IGBT 600V 20A 100W TO247
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    DigiKey IXSH10N60B2D1 Box
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    New Advantage Corporation IXSH10N60B2D1 209 1
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    • 100 $5.57
    • 1000 $5.2
    • 10000 $5.2
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    IXYS Corporation IXSP10N60B2D1

    IGBT 600V 20A 100W TO220AB
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    IXYS Corporation IXSA10N60B2D1

    IGBT 600V 20A 100W TO263
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    New Advantage Corporation IXSA10N60B2D1 66 1
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    • 1000 $4.96
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    IXYS Corporation IXSQ10N60B2D1

    IGBT DIS.DIODE SINGLE 10A 600V H.SPEED TO3P
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    New Advantage Corporation IXSQ10N60B2D1 223 1
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    IXYS Integrated Circuits Division IXSQ10N60B2D1

    IGBT DIS.DIODE SINGLE 10A 600V H.SPEED TO3P
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    Ozdisan Elektronik IXSQ10N60B2D1 223
    • 1 $4.05416
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    • 100 $3.6856
    • 1000 $3.6856
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    10N60B2D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n60b

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2

    10n60b

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2 10n60b

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2

    10n60b

    Abstract: 10n60b2d1
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V = 20 A I C25 V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2 10n60b 10n60b2d1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2