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IXYS Corporation IXSP10N60B2D1 IGBT PT 600V 20A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSP10N60B2D1	Bulk			50	1 - 10 - 100 $1.9218 1000 $1.9218 10000 $1.9218	Buy Now
IXYS Corporation IXSA10N60B2D1 IGBT PT 600V 20A TO-263AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSA10N60B2D1	Bulk			50	1 - 10 - 100 $1.9494 1000 $1.9494 10000 $1.9494	Buy Now
New Advantage Corporation	IXSA10N60B2D1		66		1	1 - 10 - 100 $4.86 1000 $4.86 10000 $4.86	Buy Now
IXYS Corporation IXSH10N60B2D1 IGBT PT 600V 20A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSH10N60B2D1	Box			30	1 - 10 - 100 $2.47367 1000 $2.47367 10000 $2.47367	Buy Now
New Advantage Corporation	IXSH10N60B2D1		209		1	1 - 10 - 100 $5.46 1000 $5.1 10000 $5.1	Buy Now
IXYS Corporation IXSQ10N60B2D1 IGBT DIS.DIODE SINGLE 10A 600V H.SPEED TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
New Advantage Corporation	IXSQ10N60B2D1		221		1	1 - 10 - 100 $5.16 1000 $4.82 10000 $4.82	Buy Now

10N60B2D1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10n60b Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b	PDF
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
10n60b Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2 10n60b	PDF
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
10n60b Abstract: 10n60b2d1 Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V = 20 A I C25 V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2 10n60b 10n60b2d1	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF