Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60at
QW-R502-743
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10n65
Abstract: tf 10n65
Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high
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10N65
10N65
QW-R502-588
tf 10n65
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60KG-TF1-T
O-22at
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N65K
10N65K
10N65KL-TF3-T
10N65KG-TF3-T
O-220F
10N65KL-TF1-T
10N65KG-TF1-hat
QW-R02-755
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10N60G
Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
O-220
O-220F1
O-220F2
QW-R502-119
10N60G
mosfet 10a 600v
10N60G-TF3-T
utc 10n60l
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N67Y0/S35A dimension drawing general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange adjustment
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10N67Y0/S35A
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N67YR dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display
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10N67YR
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment
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10N69YB
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment
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10N69YB
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N69Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display
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10N69Y0
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N69Y0 dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display output indicator LED orange adjustment
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10N69Y0
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange
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10N67YS
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N67Y0 dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display
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10N67Y0
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N69YR Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display
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10N69YR
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange
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10N67YS
200C1002)
200C1003)
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C
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10N60C5
O-220
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10n60b
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N60B2D1
10N60B2D1
IC110
O-247
8-06B
405B2
10n60b
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10n60p
Abstract: d 1065
Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V
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10N60P
O-220
O-263
O-263)
O-263
10n60p
d 1065
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10N60C
Abstract: IXKP10N60C5
Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
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10N60C5
O-220
20080523b
10N60C
IXKP10N60C5
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high
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10N60K-MT
10N60K-MT
QW-R205-022
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
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Untitled
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N60B2D1
IC110
8-06B
405B2
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diode DSDI 9
Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B
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O-247
O-220
O-264
IXGH24N50B
IXGH24N50BU1
IXGH50N50B
10N60A
IXGH24N60B
IXGH24N60BU1
IXGH50N60B
diode DSDI 9
IXLN35N120AU1
diode DSDI 12
IXLH35N120A
DSP8-12A
a1931
DSP8-08AS
95-06DA
IXln35N120A
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10N60A
Abstract: IGBT 10N60 10N6Q
Text: nixYS ^ 10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s
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IXGH10N60
10N60A
O-263
O-247
10N60
10N60A
10N60U1
10N60AU1
D94006DE,
IGBT 10N60
10N6Q
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