Untitled
Abstract: No abstract text available
Text: LC2M0S High-Speed 12-Bit ADC ANALOG DEVICES □ AD7672 FEATURES 12-Bit Resolution and Accuracy Fast Conversion Time AD7672XX03 - 3jts AD7672XX05 - 5|is AD7672XX10 - 10jis Unipolar or Bipolar Input Ranges Low Power: 110mW Fast Bus Access Times: 90ns Small, 0.3", 24-Pin Package and 28-Terminal
|
OCR Scan
|
PDF
|
12-Bit
AD7672
AD7672XX03
AD7672XX05
AD7672XX10
10jis
110mW
24-Pin
28-Terminal
|
Untitled
Abstract: No abstract text available
Text: S s? B U R R -BR O W N DAC7615 Serial Input, 12-Bit, Quad, Voltage Output DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • LOW POWER: 20mW • PROCESS CONTROL • UNIPOLAR OR BIPOLAR OPERATION • ATE PIN ELECTRONICS • SETTLING TIME: 10jis to 0.012%
|
OCR Scan
|
PDF
|
DAC7615
12-Bit,
10jis
12-BIT
DAC7615
|
Untitled
Abstract: No abstract text available
Text: / T T SGS-THOMSON M29W004T A 7 # . [M»[g[LI gmMD(gS_ M29W004B 4 Mb (x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10jis typical
|
OCR Scan
|
PDF
|
M29W004T
M29W004B
100ns
10jis
TSOP40
|
M28F256A
Abstract: No abstract text available
Text: SGS-mOMSON RíilD g[S [l[L[I(gTriS(0 R!lD(gi M28F256A CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200nA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10jis
|
OCR Scan
|
PDF
|
M28F256A
120ns
200nA
10jis
M28F256A
M28F256Afunc
|
HS5215
Abstract: No abstract text available
Text: SSDCX HS5210 SERIES * Corporation' SIGNAL PROCESSING EXCELLENCE 12-BIT ADJUSTMENT FREE ADCs FEATURES • ■ ■ ■ 12-bit conversion in 10jiS typ; 13^S max Adjustment-free. ±0.0125% linearity Low power: 670 mW typ W ide operating tem perature range: - 5 5 ° C to
|
OCR Scan
|
PDF
|
HS5210
12-BIT
10jiS
24-pin,
MIL-STD-883
24-pln
HS5215
|
SI931
Abstract: m29f040a
Text: _ M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jis typical ■ ERASE TIME - Block: 1.0 sec typical
|
OCR Scan
|
PDF
|
M29F040
512Kb
10jis
12MHz)
SI931
m29f040a
|
Untitled
Abstract: No abstract text available
Text: L IE BURR-BROlilN CORP D m 17313bS OOElObO TSb • IB U B BURR - BROW N ADS7808 ADVANCE INFORMATION SUBJECT TO CHANGE 12-Bit 10jis Serial CMOS Sampling ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • • • The ADS7808 is a complete 12-bit sampling A/D
|
OCR Scan
|
PDF
|
17313bS
ADS7808
12-Bit
10jis
100kHz
45kHz
16-BIT
ADS7809
100mW
20-PIN
|
m28f512-25
Abstract: No abstract text available
Text: M28F512 512 Kbit 64Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10jis typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5(iA typical
|
OCR Scan
|
PDF
|
M28F512
10jis
M28F512
PLCC32
m28f512-25
|
C7614
Abstract: No abstract text available
Text: B U R R -BR O W N DAC7614 w Serial Input, 12-Bit, Quad, Voltage Output DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • LOW POWER: 20mW • ATE PIN ELECTRONICS • UNIPOLAR OR BIPOLAR OPERATION • PROCESS CONTROL • SETTLING TIME: 10jis to 0.012% • CLOSED-LOOP SERVO-CONTROL
|
OCR Scan
|
PDF
|
DAC7614
12-Bit,
10jis
12-BIT
DAC8420
C7614
|
Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson ADS7804 B U R R -B R O W N E 1 DEMO BOARD AVAILABLE See Appendix A 12-Bit 10jis Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • 100kHz min SAMPLING RATE The ADS7804 is a complete 12-bit sampling A/D
|
OCR Scan
|
PDF
|
ADS7804
12-Bit
10jis
100kHz
ADS7804
12-bit,
45kHz
16-BIT
ADS7805
|
mm29f040
Abstract: No abstract text available
Text: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical
|
OCR Scan
|
PDF
|
M29F040
10jis
12MHz)
PLCC32
M29F040
PLCC32
TSOP32
mm29f040
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F102B [M D M [iL [iO T M O (§ S 1 Mb (x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10jis typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
|
OCR Scan
|
PDF
|
M29F102B
10jis
M28F102
|
Untitled
Abstract: No abstract text available
Text: I b ADS7820 I b www.burr-brown.com/databook/ADS7820.hIml H 12-Bit 10jis Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • • • • The A D S 7820 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a
|
OCR Scan
|
PDF
|
com/databook/ADS7820
100kHz
45kHz
16-BIT
ADS7821
100mW
28-PIN
12-bit
12-bit,
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F002T * [Ä L [iO T M 0 § S 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10jis typical PROGRAM/ERASE CONTROLLER (P/E.C.)
|
OCR Scan
|
PDF
|
M29F002T
10jis
PDIP32
PLCC32
|
|
|
102119
Abstract: No abstract text available
Text: SGS-THOMSON [MD M[iL[iOTMO(§S M29F105B 1 Mb (x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10jis typical PROGRAM/ERASE CONTROLLER (P/E.C.)
|
OCR Scan
|
PDF
|
M29F105B
10jis
0020h
0087h
14Specifications
102119
|
Applications Note U-137
Abstract: No abstract text available
Text: y UNITRODE UCC1776 UCC2776 UCC3776 PRELIMINARY Quad FET Driver FEATURES DESCRIPTION • High Peak Output Current Each Output - 1.5A Source, 2.0A Sink • W ide Operating Voltage Range 4.5V to 18V • Thermal Shutdown • CMOS Compatible Inputs • Outputs Are Active Low
|
OCR Scan
|
PDF
|
UCC1776
UCC2776
UCC3776
UCC3776
C3776
UC3879
Applications Note U-137
|
Philips FA 261
Abstract: Microcontroller AT89S52 40 pin diagram TOP3 package WL 431 80C51 83L51FA 87L51FA 8XL51FA
Text: 711002b OObbll? ^47 H P H I N Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 3.0V 8-bit microcontroller DESCRIPTION FEATURES The 87L51 FA and 83L51 FA hereafter generically referred to as 8XL51FA Single-Chip 3.0V 8-Bit Microcontrollers are
|
OCR Scan
|
PDF
|
7110fl2b
83L51FA/87L51
87L51
83L51
8XL51FA)
80C51
8XL51FA
80C51.
8XL51
16-bit
Philips FA 261
Microcontroller AT89S52 40 pin diagram
TOP3 package
WL 431
83L51FA
87L51FA
|
AMD 28F512
Abstract: No abstract text available
Text: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current
|
OCR Scan
|
PDF
|
Am28F512
32-pin
28F512
AMD 28F512
|
Untitled
Abstract: No abstract text available
Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY5117100A
HY5117100A
HY5117100Ato
tRASI13)
1RP02)
1AD20-10-MAY94
HY51171OOA
HY5117100AJ
|
Untitled
Abstract: No abstract text available
Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
|
OCR Scan
|
PDF
|
HYM532224A
32-bit
HY5117804B
HYM532224AE/ASLE/ATE/ASLTE
HYM532224AEG/ASLEG/ATEG/ASLTEG
171M1N
DD054M
1CE13-10-0EC94
|
Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for
|
OCR Scan
|
PDF
|
HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
70MIN.
|
OD-820W
Abstract: OD820W OD-82QW
Text: OPTO DIODE CORP ssE j> m b flo m a oog oicio 2b3 m o?i> HIGH-SPEED GaAIAs IR EMITTERS OD-820W FEATURES • High reliability LPE grown GaAIAs • High power output • Fast response • Wide range of linear power output • Custom packages available • 100% test for minimum power requirement
|
OCR Scan
|
PDF
|
OD-82QW
OD-820W
820nm
100Hz
OD820W
OD-82QW
|
op220 "direct replacement"
Abstract: LT1034 op220 AD707 LT1001 LT1012 LT1077 OP-07 OP-77
Text: r r TECHNOLOGY u r m _LT1Q77 Micropower, Single Supply, Precision Op Amp F€ATUA€S DCSCRIPTiOn • 60/iA Max Supply Current ■ 40/tV Max Offset Voltage ■ 350pA Max Offset Current ■ 0.5fiVp-p 0.1 Hz to 10Hz Voltage Noise ■ 2.5pAp-p 0.1 Hz to 10Hz Current Noise
|
OCR Scan
|
PDF
|
60/xA
40/tV
350pA
250kHz
OP-07,
OP-77,
AD707,
LT1001,
LT1012
108dB
op220 "direct replacement"
LT1034
op220
AD707
LT1001
LT1077
OP-07
OP-77
|
Untitled
Abstract: No abstract text available
Text: himMMS March 1994 HM 65788 DATA SHEET_ 16 K x 4 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME COMMERCIAL: 15/20/25/35/45 ns INDUSTRIAL/MILITARY : 20/25/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE : 267 mW typ STANDBY: 75 mW(typ)
|
OCR Scan
|
PDF
|
J24pins
6S788/Rev
|