lm 398- SAMPLE AND HOLD
Abstract: No abstract text available
Text: 19-0377: Rev 1:12/97 16-B it, 85ksps ADC w ith 10fjA Shutdow n F e a tu re s ♦ 16 Bits, No Missing Codes The MAX195, with an external reference up to +5V , offers a unipolar (OV to V r e f ) or bipolar (-V r e f to V r e f ) pin-selectable input range. Separate analog and digital
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85ksps
10fjA
MAX195
16-bit
MAX195,
lm 398- SAMPLE AND HOLD
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silicon bilateral switch
Abstract: H11J1 H11J2 H11J3 H11J4 H11J5 IS3020 IS3021 MOC3009 MOC3010
Text: iSOCOM COMPONENTS Triac Couplers Single Channel, 6 Pin DIP Part Number Features Input Trigger Current VTM = 3V Max mA H11J1 10 H11J2 15 Isolation Test Voltage V (RMS) Continuous Forward Current Max (mA) VBR LED Ir = 10fjA Min (V) Peak Off-State Reverse Current
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H11J1
H11J2
H11J3
H11J4
H11J5
IS3020
IS3021
VDE0884,
silicon bilateral switch
H11J1
H11J3
H11J4
H11J5
IS3020
IS3021
MOC3009
MOC3010
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marking N
Abstract: 35 marking
Text: 1SV237 SILICON EPITAXIAL PIN TYPE VHF-UHF BAND RF ATTENUATOR APPLICATIONS. ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC SYNBOL TEST CONDITION MIN. TYP. - MAX. UNIT V vr lR=10fjA 50 Reverse Current IR V r =50V - Forward Voltage VF Ip=50nA - 0.95 Total Capacitance
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1SV237
10fjA
100MHz
marking N
35 marking
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SSL-LX304CSYD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL-LX304CSYD 3.0 CO.118] 2.0010.15 lf= 20m A ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X [0 .0 7 9 + 0 .0 0 6 ] PARAMETER MIN PEAK WAVELENGTH MAX 590 FORWARD VOLTAGE V J TYP ZI UNITS TEST COND nm 2.5 Vf Vr lr =10fjA AXIAL INTENSITY
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SSL-LX304CSYD
10fjA
SSL-LX304CSYD
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL—LX507E3SIC 4,60 [0,181] 5,80 [0,228] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 S 'C PARAMETER MIN PEAK WAVELENGTH 4,40 CO,173] 5,60 CO. 220] 2.0 I— [0.307] 4,60 [0,181] 5.80 UNITS TEST COND nm 2.4- 5.0 Vf Vr lr =10fJA
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LX507E3SIC
10jJA
DECL05URE
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MSC5301B-01GS-BK
Abstract: 11 pin 8 segment LcD MSC5301B-01 QFP100-P-1420-BK C14EE
Text: O K I Semiconductor MSC5301B-01 COMMON/SEGMENT DRIVER WITH RAM GENERAL DESCRIPTION The MSC5301B-01 is an LCD driver LSI w ith a built-in RAM. The device's bit m apping m ethod offers greater flexibility in w hich each bit of the RAM for display controls each section on the LCD
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MSC5301B-01
MSC5301B-01
100-pin
QFP100-P-1420-BK)
MSC5301B-01GS-BK)
002300b
MSC5301B-01GS-BK
11 pin 8 segment LcD
QFP100-P-1420-BK
C14EE
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SSL-LXA1008USBTR41
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PA R T N U M B E R REV. SSL-LXA1008USBTR41 1,40 [0 ,05 5 ] Í 2.00 [0.079] i_ ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE REFLOW PROFILE 8 SEC. MAX. 90-120 SEC./s>. I I I I
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SSL-LXA1008USBTR41
20rnA
10fjA
DECL05URE
SSL-LXA1008USBTR41
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SSL-LX304CSID
Abstract: 1dq0
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L-LX 304C S ID 3.0 CO.118] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 2.0010.15 [0.079+0.006] PARAMETER MIN PEAK WAVELENGTH 15.50 ±0.70 [0,610*0,028] lf= 20m A MAX UNITS 636 FORWARD VOLTAGE V J TYP 2.0 TEST COND
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SSL-LX304CSID
10fjA
SSL-LX304CSID
1dq0
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDC —N3002RI P IN ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25'C PARAMETER T YP PEAK WAVELENGTH FORWARD VOLTAGE 565 22 REVERSE VOLTAGE UNITS 2.6 rim Vf 5.0 AXIAL INTENSITY PIN lf= 10 m A MAX 2500 EMITTED COLOR: GREEN
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--N3002RI
10fjA
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175C
Abstract: IT130 IT130A IT131 IT132 XIT130 XIT131 TO-71 transistor 5V110
Text: IT130 —IT132 CALOGIC CORP üAE ]> • 1ÔMM3S5 ÜGGG3b3 4 m C G C _ calori« Monolithic Dual PNP General Purpose Amplifier CORPORATION V 'TJZm 7-Z7 IT130-IT132 A B S O L U T E MAXIMUM RATING S Ta = 25°C unless otherwise specified
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IT130-IT132
10jiA,
175C
IT130
IT130A
IT131
IT132
XIT130
XIT131
TO-71 transistor
5V110
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3N165
Abstract: 3N166
Text: ^Ælitron [F>ßä E m J T r ©MMMi P -C H A N N E L E N H A N C E M E N T DUAL M O S FET Devices. Inc. CHIP IMUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .035" 0.889mm) It is advisable that:
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889mm)
0254mm)
-10mA,
--10V
10niA
3N165
3N166
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KSR1006
Abstract: KSR2006
Text: SAM SUN G SEMICO NDU CTO R INC- KSR2006 14E 0 §711,4142 0007077 T | P N P EPIT A XIA L S IL IC O N T R A N SIST O R — — " SWITCHING APPLICATION Bias T - 31' IS Resistor Built In • Switching Circuit, Inverter, Interface circuit. Driver circuit • Built in bias Resistor (R,=10KQ, R,=47Kil)
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KSR2006
47Kil)
KSR1006
KSR1006
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PG1286
Abstract: NPN 200 VOLTS POWER TRANSISTOR RG-126 PG1250 PG1251 PG1252 PG1253 PG1254 PG1257 PG1264
Text: • ,0043592 A P I ELECTRONICS INC " A P I ELECTRONICS INC 13A0097 T ~ 3 }~ q ? 13 D E | ODHBSTS 000QCH7 0 T - ' IN T E R IM B U L L E T IN S u b je ct to Revision W ith o u t N otice _ -J u ly 15,1971 TYPE P 1250 thru PG1252, 5 AMP NPN
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13A0097
000QCH7
PG1250
PG1251
PG1252,
100mA
PG1278
PG1281
PG1286
NPN 200 VOLTS POWER TRANSISTOR
RG-126
PG1252
PG1253
PG1254
PG1257
PG1264
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Untitled
Abstract: No abstract text available
Text: EDI7F433IMV 4x1Megx32 PRELIMINARY 4X1Megx32 Flash Module The EDI7F433IMV is organized as four banks of 1 meg x 32. The module is based on AMDs AM29LV008T - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 100 and
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EDI7F433IMV
4x1Megx32
4X1Megx32
EDI7F433IMV
AM29LV008T
120ns
-AM29LV008T
100ns
16Kbyte,
32Kbyte
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV. A PART NUMBER REV. SSL-LX304CSQD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 1 2 2 9 . 3 .1 8 .0 5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 3 .0 H CO.1 1 8 ] 2 . 0 0 1 0 .1 5 [û. 0 7 9 ± 0 . 0 0 6 ] DATE PARAMETER MIN P[AK WAVELENGTH
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SSL-LX304CSQD
117tO
10fjA
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SSL-LX304CSUGD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV. A PART NUMBER REV. SSL-LX304CSUGD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 1 2 2 9 . 3 .1 8 .0 5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 3.0 CO.118] 2.0010.15 [0 .0 7 9 ± û .0 0 6 ] PARAMETER H MIN P[AK WAVELENGTH [a ]
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SSL-LX304CSUGD
574nm
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SSL-LX507E3UPGC A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #111 49 DATE 11.01.06 4,50 [0,177] 5,65 [0,222] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 S 'C PARAMETER MIN PEAK WAVELENGTH 5 .4 5 [0,215: lf= 2DmA MAX
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SSL-LX507E3UPGC
525nm
DECL05URE
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SSL-LX304CHD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV. PART NUMBER REV. SSL-LX304CHD D E.C.N. NUMBER AND REVISION COMMENTS A B UPDATED SPEC S. CHG’D LEAD LENGTH. 1.26.95 2.20.95 C E.C.N. # 10BR D R . & REDRAWN IN 3D. 4.10.01 □ E.C.N, # 1 1 2 2 9, 3.18.D5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C
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117tO
SSL-LX304CHD
10BRDR.
10fjA
700nm
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS XL93LC06-3 Exçtllenca In & Prelim inary 256-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability F EA T U R ES PIN CONFIGURATIONS • State-of-the-Art Architecture — Nonvolatile data storage — 3V to 5V operation — Full T T L compatible inputs and outputs
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XL93LC06-3
256-Bit
632fi
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Untitled
Abstract: No abstract text available
Text: .SAMSUNG SEMI CONDUCTOR INC BCW72 IME 0 | □ 00721*1•ì NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C I i Characteristic Symbol Rating Unit 50 '4 5 5 100 350 150 V V V mA mW °C 1 [ Collector-Base Voltage
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BCW72
OT-23
MMBT5088
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KST3906
Abstract: r01f 3050 transistor
Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST3906
OT-23
-10HA,
lE--10
GD2511S
KST3906
r01f
3050 transistor
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NEC d446c
Abstract: d446c-2 d446c PD446C d446c-2 RAM PD446C-3 D446* nec D446* RAM MPD446C-3 pd446
Text: SEC NEC Electronics Inc. ¿¿PD446 2 ,0 4 8 X 8-B IT STATIC CMOS RAM Revision 3 Description Pin Configuration The ¿¿PD446 is a high-speed, low-power, 2048-word by 8bit static CMOS RAM fabricated with advanced silicongate CMOS technology. A unique circuitry technique
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uPD446
2048-word
mPD446
fiPD446
24-pin
nPD446
PD446
NEC d446c
d446c-2
d446c
PD446C
d446c-2 RAM
PD446C-3
D446* nec
D446* RAM
MPD446C-3
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 2006A 2SA1417/2SC3647 sju y o i PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time. , Very small size making it easy to provide high-density, small-sized hybrid
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2SA1417/2SC3647
2SA1417
2SA1JH7/2SC3647
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pic 636
Abstract: ka 7562 PIC626 PIC7501 pic602 diagram an 7522 7555-PIC PIC635 PIC660 PIC7526
Text: PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 Semiconductor Devices, Silicon Hybrid Switching Regulators High Reliability Types PIC 600/601/602 PIC 610/611/612 PIC 625/626/627 PIC 635/636/637 PIC 660/661/662 PIC 670/671/672 Test Level T, Test Level T2
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7501-PIC
7519-PIC
7555-PIC
pic 636
ka 7562
PIC626
PIC7501
pic602
diagram an 7522
PIC635
PIC660
PIC7526
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