tc 89101 p
Abstract: No abstract text available
Text: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s
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CY10E474
CY100E474
1024x4
10E474
10KH/10K
100E474
10E474L--5JC
10E474L--7JC
10E474L--7K
tc 89101 p
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Untitled
Abstract: No abstract text available
Text: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version
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CY10E474
CY100E474
10KH/10K-
100K-compatible
10K/10KH
CY10E474
CY10E474â
CY10E474Lâ
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c4744
Abstract: 10E474-5K 10E474
Text: CY10E474 CY100E474 CYPRESS : SEMICONDUCTOR • Features • 1024 x 4-bit organization • Ultra high speed/standard power — = 275 mA — I ce = 190 mA • Both 10KH/10K and 100K com patible I/O versions 10K/10KH M ilitary version • O n-chip voltage com pensation for
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CY10E474
CY100E474
10KH/10K
10K/10KH
100E474
100Kcom
10E474L-5JC
10E474L-5K
10E474I
10E474L-5
c4744
10E474-5K
10E474
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Untitled
Abstract: No abstract text available
Text: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA
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OCR Scan
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CY10E474
CY100E474
CY10E474
10KH-/10K-
BlocCY10E474-5LC
CY10E474-5YC
CY10E474-5KC
CY10E474I
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