Untitled
Abstract: No abstract text available
Text: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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BSS138W
OT-323
SC-70)
10-Apr-07
OT-323
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SUB60N06
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB60N06-18
S-60454Rev.
10-Apr-06
SUB60N06
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SUD50N024-06P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N024-06P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N024-06P
18-Jul-08
SUD50N024-06P
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Si9434BDY
Abstract: No abstract text available
Text: SPICE Device Model Si9434BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9434BDY
18-Jul-08
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SUD50N02-06
Abstract: No abstract text available
Text: SPICE Device Model SUD50N02-06 Vishay Siliconix N-Channel 2.5-V G-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N02-06
18-Jul-08
SUD50N02-06
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SUD50N02-04P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N02-04P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N02-04P
18-Jul-08
SUD50N02-04P
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SUD50N02-09P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N02-09P
18-Jul-08
SUD50N02-09P
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SUM40N15-38
Abstract: 72382
Text: SPICE Device Model SUM40N15-38 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM40N15-38
S-60541Rev.
10-Apr-06
SUM40N15-38
72382
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PDF
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SUD50N024-09P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N024-09P
S-60543Rev.
10-Apr-06
SUD50N024-09P
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PDF
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SUM27N20-78
Abstract: No abstract text available
Text: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM27N20-78
S-60541Rev.
10-Apr-06
SUM27N20-78
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71713
Abstract: SUD40N08-16
Text: SPICE Device Model SUD40N08-16 Vishay Siliconix N-Channel 80-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD40N08-16
S-60542Rev.
10-Apr-06
71713
SUD40N08-16
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Untitled
Abstract: No abstract text available
Text: PhMKP./.-DW Vishay ESTA ESTAprop/ESTAdry Power Factor Correction Capacitors Low Voltage DW-TYPE FILTER CAPACITORS/IMPREGNATED OR DRY/RESIN-FILLED DESIGN APPLICATION ESTAprop DW-type capacitors in rectangular steel casing have been designed for high current filter circuit applications
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18-Jul-08
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transistor a 1837
Abstract: SUD45N05-20L
Text: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD45N05-20L
S-60542Rev.
10-Apr-06
transistor a 1837
SUD45N05-20L
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B 1184
Abstract: 55NS100
Text: SPICE Device Model SUP/SUB85N02-06 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB85N02-06
S-60545Rev.
10-Apr-06
B 1184
55NS100
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QFN 7X7
Abstract: BPF filter rf GHz R1005 transistor 2.4 ghz bandpass filter R1005 XR1005-QD XR1005-QD-0N00 XR1005-QD-0N0T XR1005-QD-EV1 receiver 20 GHz block Diagram
Text: 19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm R1005-QD April 2006 - Rev 10-Apr-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 3.0 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing
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R1005-QD
10-Apr-06
XR1005-QD
QFN 7X7
BPF filter rf GHz
R1005 transistor
2.4 ghz bandpass filter
R1005
XR1005-QD-0N00
XR1005-QD-0N0T
XR1005-QD-EV1
receiver 20 GHz block Diagram
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PDF
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2Xf transistor
Abstract: 84-1LMI X1000 XR1002 XX1000 balun GHz broadband TRANSISTOR 2xf
Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 April 2006 - Rev 10-Apr-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing
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X1000
10-Apr-06
MIL-STD-883
XR1002
2Xf transistor
84-1LMI
X1000
XX1000
balun GHz broadband
TRANSISTOR 2xf
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104 DISC capacitor
Abstract: 101 Ceramic Disc Capacitors 103 Ceramic Disc Capacitors 104 Ceramic Disc Capacitors marking code capacitors 102 Ceramic Disc Capacitors capacitors 104 ceramic disc 104 capacitors F472K75Y5RN83J0 f151
Text: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT
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08-Apr-05
104 DISC capacitor
101 Ceramic Disc Capacitors
103 Ceramic Disc Capacitors
104 Ceramic Disc Capacitors
marking code capacitors
102 Ceramic Disc Capacitors
capacitors 104
ceramic disc 104 capacitors
F472K75Y5RN83J0
f151
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transistor R1005
Abstract: R1005 transistor R1005 DM6030HK TS3332LD XR1005
Text: 19.0-26.0 GHz GaAs MMIC Receiver R1005 April 2006 - Rev 10-Apr-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.3 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing
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R1005
10-Apr-06
MIL-STD-883
transistor R1005
R1005 transistor
R1005
DM6030HK
TS3332LD
XR1005
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74181
Abstract: Si5486DU
Text: SPICE Device Model Si5486DU Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5486DU
18-Jul-08
74181
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Si6923DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6923DQ Vishay Siliconix P-Channel Rated MOSFET + Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6923DQ
18-Jul-08
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SUD50N024-09P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUD50N024-09P
18-Jul-08
SUD50N024-09P
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PDF
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SUD40N06-25L
Abstract: No abstract text available
Text: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUD40N06-25L
18-Jul-08
SUD40N06-25L
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SUD40N06-25L
Abstract: No abstract text available
Text: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUD40N06-25L
S-60542Rev.
10-Apr-06
SUD40N06-25L
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PDF
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SUM18N25-165
Abstract: No abstract text available
Text: SPICE Device Model SUM18N25-165 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM18N25-165
18-Jul-08
SUM18N25-165
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