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    Untitled

    Abstract: No abstract text available
    Text: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


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    BSS138W OT-323 SC-70) 10-Apr-07 OT-323 PDF

    SUB60N06

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUP/SUB60N06-18 S-60454Rev. 10-Apr-06 SUB60N06 PDF

    SUD50N024-06P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N024-06P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD50N024-06P 18-Jul-08 SUD50N024-06P PDF

    Si9434BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9434BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si9434BDY 18-Jul-08 PDF

    SUD50N02-06

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N02-06 Vishay Siliconix N-Channel 2.5-V G-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD50N02-06 18-Jul-08 SUD50N02-06 PDF

    SUD50N02-04P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N02-04P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD50N02-04P 18-Jul-08 SUD50N02-04P PDF

    SUD50N02-09P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD50N02-09P 18-Jul-08 SUD50N02-09P PDF

    SUM40N15-38

    Abstract: 72382
    Text: SPICE Device Model SUM40N15-38 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM40N15-38 S-60541Rev. 10-Apr-06 SUM40N15-38 72382 PDF

    SUD50N024-09P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD50N024-09P S-60543Rev. 10-Apr-06 SUD50N024-09P PDF

    SUM27N20-78

    Abstract: No abstract text available
    Text: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM27N20-78 S-60541Rev. 10-Apr-06 SUM27N20-78 PDF

    71713

    Abstract: SUD40N08-16
    Text: SPICE Device Model SUD40N08-16 Vishay Siliconix N-Channel 80-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD40N08-16 S-60542Rev. 10-Apr-06 71713 SUD40N08-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: PhMKP./.-DW Vishay ESTA ESTAprop/ESTAdry Power Factor Correction Capacitors Low Voltage DW-TYPE FILTER CAPACITORS/IMPREGNATED OR DRY/RESIN-FILLED DESIGN APPLICATION ESTAprop DW-type capacitors in rectangular steel casing have been designed for high current filter circuit applications


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    18-Jul-08 PDF

    transistor a 1837

    Abstract: SUD45N05-20L
    Text: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD45N05-20L S-60542Rev. 10-Apr-06 transistor a 1837 SUD45N05-20L PDF

    B 1184

    Abstract: 55NS100
    Text: SPICE Device Model SUP/SUB85N02-06 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUP/SUB85N02-06 S-60545Rev. 10-Apr-06 B 1184 55NS100 PDF

    QFN 7X7

    Abstract: BPF filter rf GHz R1005 transistor 2.4 ghz bandpass filter R1005 XR1005-QD XR1005-QD-0N00 XR1005-QD-0N0T XR1005-QD-EV1 receiver 20 GHz block Diagram
    Text: 19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm R1005-QD April 2006 - Rev 10-Apr-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 3.0 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


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    R1005-QD 10-Apr-06 XR1005-QD QFN 7X7 BPF filter rf GHz R1005 transistor 2.4 ghz bandpass filter R1005 XR1005-QD-0N00 XR1005-QD-0N0T XR1005-QD-EV1 receiver 20 GHz block Diagram PDF

    2Xf transistor

    Abstract: 84-1LMI X1000 XR1002 XX1000 balun GHz broadband TRANSISTOR 2xf
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 April 2006 - Rev 10-Apr-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing


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    X1000 10-Apr-06 MIL-STD-883 XR1002 2Xf transistor 84-1LMI X1000 XX1000 balun GHz broadband TRANSISTOR 2xf PDF

    104 DISC capacitor

    Abstract: 101 Ceramic Disc Capacitors 103 Ceramic Disc Capacitors 104 Ceramic Disc Capacitors marking code capacitors 102 Ceramic Disc Capacitors capacitors 104 ceramic disc 104 capacitors F472K75Y5RN83J0 f151
    Text: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT


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    08-Apr-05 104 DISC capacitor 101 Ceramic Disc Capacitors 103 Ceramic Disc Capacitors 104 Ceramic Disc Capacitors marking code capacitors 102 Ceramic Disc Capacitors capacitors 104 ceramic disc 104 capacitors F472K75Y5RN83J0 f151 PDF

    transistor R1005

    Abstract: R1005 transistor R1005 DM6030HK TS3332LD XR1005
    Text: 19.0-26.0 GHz GaAs MMIC Receiver R1005 April 2006 - Rev 10-Apr-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.3 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


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    R1005 10-Apr-06 MIL-STD-883 transistor R1005 R1005 transistor R1005 DM6030HK TS3332LD XR1005 PDF

    74181

    Abstract: Si5486DU
    Text: SPICE Device Model Si5486DU Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si5486DU 18-Jul-08 74181 PDF

    Si6923DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6923DQ Vishay Siliconix P-Channel Rated MOSFET + Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si6923DQ 18-Jul-08 PDF

    SUD50N024-09P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD50N024-09P 18-Jul-08 SUD50N024-09P PDF

    SUD40N06-25L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD40N06-25L 18-Jul-08 SUD40N06-25L PDF

    SUD40N06-25L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUD40N06-25L S-60542Rev. 10-Apr-06 SUD40N06-25L PDF

    SUM18N25-165

    Abstract: No abstract text available
    Text: SPICE Device Model SUM18N25-165 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM18N25-165 18-Jul-08 SUM18N25-165 PDF