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    Vishay Siliconix SI6923DQT1

    P-CHANNEL 2.5-V (G-S) MOSFET WITH SCHOTTKY DIODE Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI6923DQT1 3,000
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    SI6923DQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6923DQ Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET with S Original PDF
    Si6923DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6923DQ Vishay Intertechnology P-Channel Rated MOSFET + Schottky Diode Original PDF
    Si6923DQ SPICE Device Model Vishay P-Channel Rated MOSFET + Schottky Diode Original PDF
    SI6923DQ-T1 Vishay Intertechnology P-Channel Rated MOSFET + Schottky Diode Original PDF

    SI6923DQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    si6923

    Abstract: No abstract text available
    Text: Si6923DQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage


    Original     		Si6923DQ S-56941--Rev. 02-Nov-98 si6923 PDF

    Si6923DQ

    Abstract: No abstract text available
    Text: Si6923DQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage


    Original     		Si6923DQ 18-Jul-08 PDF

    Si6923DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6923DQ Vishay Siliconix P-Channel Rated MOSFET + Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6923DQ 18-Jul-08 PDF

    LT 1000-T1

    Abstract: marking 34 diode SCHOTTKY MOSFET TSSOP-8 Si6923DQ
    Text: Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the


    Original     		Si6923DQ LT 1000-T1 marking 34 diode SCHOTTKY MOSFET TSSOP-8 PDF

    Si6923DQ

    Abstract: b1950
    Text: SPICE Device Model Si6923DQ Vishay Siliconix P-Channel Rated MOSFET + Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6923DQ 16-Apr-01 b1950 PDF

    PMOS MODEL PARAMETERS SPICE

    Abstract: PMOS k 815 MOSFET Si6923DQ
    Text: SPICE Device Model Si6923DQ P-Channel Rated MOSFET + Schottky Diode Characteristics • • • • • Applicable Over a -55 to 125 o C Temperature Range • Models Gate Charge, Transient and Diode Reverse P-Channel Vertical DMOS Macro-Model Subcircuit


    Original     		Si6923DQ 1E-05 PMOS MODEL PARAMETERS SPICE PMOS k 815 MOSFET PDF

    Si6923DQ

    Abstract: No abstract text available
    Text: Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the


    Original     		Si6923DQ PDF

    74829

    Abstract: data sheet 4521 AN609 Si6923DQ
    Text: Si6923DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6923DQ AN609 10-Jul-07 74829 data sheet 4521 PDF

    diode t2

    Abstract: No abstract text available
    Text: Si6923DQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage


    Original     		Si6923DQ 08-Apr-05 diode t2 PDF

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


    Original     		Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SI6923DQ VISHAY Vishay Siliconix P-Ch 2.5-V G-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) r DS(ON) -2 0 I d (A) (& ) 0.050 @ VGS = -4 .5 V ±3 .5 0.085 @ VGS = -2 .5 V ±2 .7 S C H O TTK Y PRODUCT SUM M AR Y V k a (V)


    OCR Scan     		SI6923DQ Si6923DQ S-56941â 02-Nov-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: o * * * a ^ July 1998 Vishay-Siliconix 2201 Laurelw ood Road S anta Clara, CA 95054 C ustom er Support 1.800.554.5565 O utside the U.S. 1.408.567.8220 http://www.siliconix.com DG333A and DG333AL Precision SPDT Quad Analog Switches The Key Benefits: maximizes accuracy


    OCR Scan     		DG333A DG333AL DG333AL MAX33A ADG333A MAX333A PDF