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    1056 TRANSISTOR Search Results

    1056 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1056 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The UTM-1056 contains three monolithic microwave integrated


    Original     		UTM-1056 UTM-1056 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000␣MHz The UTM-1056 contains three monolithic microwave integrated circuits mounted on a thin-film


    Original     		UTM-1056 1000MHz UTM-1056 5963-2507E PDF

    teledyne microwave 24022

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The UTM-1056 contains three monolithic microwave integrated circuits mounted on a thin-film substrate to provide an RF


    Original     		UTM-1056 UTM-1056 teledyne microwave 24022 PDF

    NAND01GW3B2C

    Abstract: NAND01GR3b2c nand01gw3b2cza6
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word nand01gw3b2cza6 PDF

    VFBGA153

    Abstract: NAND01G-B2C NAND01GW3B2C nand flash ONFI 3.0 NAND01GR3b2c ONFI 3.0 strataflash reliability NAND01G
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word VFBGA153 NAND01G-B2C nand flash ONFI 3.0 ONFI 3.0 strataflash reliability NAND01G PDF

    disadvantages of microcontroller

    Abstract: power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack ADAU1761 BJT IC Vce bjt advantages and disadvantages
    Text: AN-1056 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Capless Headphone Virtual Ground Short-Circuit Protection for the ADAU1361 and ADAU1761 Low Power Codecs


    Original     		AN-1056 ADAU1361 ADAU1761 AN08757-0-2/10 disadvantages of microcontroller power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack BJT IC Vce bjt advantages and disadvantages PDF

    CCD47-10

    Abstract: Scientific Imaging Technologies
    Text: CCD47-10 AIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection


    Original     		CCD47-10 Scientific Imaging Technologies PDF

    Untitled

    Abstract: No abstract text available
    Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 PDF

    NAND02GR3B2D

    Abstract: NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GR3B2D NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B PDF

    NAND02GW3B2D

    Abstract: ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GW3B2D ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand PDF

    LM64C08P

    Abstract: SHARP LM64C08P T65550 AN-1056 lvds 6bit
    Text: National Semiconductor Application Note 1056 Michael Hinh September 1996 INTRODUCTION The advantages of using the FPD-Link chipset in a notebook application are to reduce the number of conductors, the size of the cables, and to allow the system designer to reduce


    Original     		640x480 an012879 LM64C08P SHARP LM64C08P T65550 AN-1056 lvds 6bit PDF

    Untitled

    Abstract: No abstract text available
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word PDF

    NAND02GR3B2D

    Abstract: No abstract text available
    Text: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D byte/1056 TSOP48 NAND02GR3B2D PDF

    LM64C08P

    Abstract: SHARP LM64C08P AN-1056 50-pin lvds
    Text: National Semiconductor Application Note 1056 Michael Hinh September 1996 INTRODUCTION The advantages of using the FPD-Link chipset in a notebook application are to reduce the number of conductors, the size of the cables, and to allow the system designer to reduce


    Original     		640x480 LM64C08P SHARP LM64C08P AN-1056 50-pin lvds PDF

    ULGA52

    Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C PDF

    LGA-52

    Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
    Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage


    Original     		NAND04G-B2D, NAND08G-BxC byte/1056 LGA-52 LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint PDF

    NAND02GW3B2D

    Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 VFBGA63 VFBGA63 NAND02GW3B2D NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI NAND02GW3B2D-N PDF

    NAND02GR3B2D

    Abstract: No abstract text available
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D 2112-byte/1056-word NAND02GR3B2D PDF

    block code error management, verilog

    Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		NAND04GW3B2B NAND08GW3B2A Byte/1056 block code error management, verilog NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B PDF

    NUMONYX

    Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		NAND04GW3B2B NAND08GW3B2A Byte/1056 NUMONYX JESD97 NAND04GW3B2B NAND08GW3B2A PDF

    NAND04GW3B4

    Abstract: 4 bit microcontroller using vhdl bad block error correction code in vhdl vhdl code for 1 bit error generator JESD97
    Text: NAND04GW3B 4 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memory PRELIMINARY DATA Feature summary • High density NAND Flash Memory – 4 Gbit memory array – Up to 128 Mbit spare area – Cost effective solution for mass storage applications ■ NAND Interface


    Original     		NAND04GW3B Byte/1056 NAND04GW3B4 4 bit microcontroller using vhdl bad block error correction code in vhdl vhdl code for 1 bit error generator JESD97 PDF

    avantek microwave 865

    Abstract: No abstract text available
    Text: What wLUMHEWLETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data 1 UTM-1056 Features Pin Configuration Description Applications • IF/RF Amplification UTM—TO-8T The lITM-1056 contains three monolithic microwave integrated


    OCR Scan     		UTM-1056 lITM-1056 UTM-1056 avantek microwave 865 PDF

    Untitled

    Abstract: No abstract text available
    Text: W hatH milKA P AeCwK Al eRtDt Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration Applications • IF/RF Amplification UTM—TO-8T The UTM-1056 contains three monolithic microwave integrated


    OCR Scan     		UTM-1056 UTM-1056 PDF

    SP-3383

    Abstract: No abstract text available
    Text: W a t k i n s - J o h n s o n : The Ce l l E x t e n d e r s Power Amplifiers S A 1056 CDMA 2-W att 1.93 GHz to 1.99 GHz Linear Pow er Amplifier Module • 40 dB Bain ■ PldB: +39 dBm ■ 0IP3:+49dBm atkins-Johnson’s SA 1056 Power W Amplifier provides exceptional


    OCR Scan     		49dBm SP-3383 PDF