DP-42
Abstract: HN624116 HN624116FB
Text: HN624116 Series 1048576-word x 16-bit/2097152-word × 8-bit CMOS Mask Programmable Read Only Memory The HN624116 is a 16-Mbit CMOS maskprogrammable ROM organized either as 1048576words by 16 bits or as 2097152words by 8 bits. Realizing low power consumption, this
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HN624116
1048576-word
16-bit/2097152-word
16-Mbit
1048576words
2097152words
HN624116,
ns/200
DP-42
HN624116FB
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HN62428P
Abstract: HN62428 DP-42 HN62428TT
Text: HN62428 Series 524288-word x 16-bit / 1048576-word × 8-bit CMOS Mask Programmable Read Only Memory HN62428 Series is a 8-Mbit CMOS maskprogramable ROM organized either as 524288words by 16 bits or as 1048576words by 8 bits. It can be operated with a battery because of
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HN62428
524288-word
16-bit
1048576-word
524288words
1048576words
HN62428P-15/-20
HN62428P
DP-42
HN62428TT
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DP-42
Abstract: HN624416NFB-12 HN624416NP-12 HN624416NTT-12 Hitachi DSA00181
Text: HN624416N Series 1048576-word x 16-bit/2097152-word × 8-bit CMOS Mask Programmable ROM ADE-203-465A Z Rev. 1.0 May. 22, 1997 Description The Hitachi HN624416N series is a 16-Mbit CMOS mask-programmable ROM organized either as 1048576word × 16-bit or 2097152-word × 8-bit. As it has realized high speed normal access 120 ns and page mode
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HN624416N
1048576-word
16-bit/2097152-word
ADE-203-465A
16-Mbit
1048576word
16-bit
2097152-word
42-pin
DP-42
HN624416NFB-12
HN624416NP-12
HN624416NTT-12
Hitachi DSA00181
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RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0300Z
16-Mbit
1048576-words
16-bit,
52pin
RENESAS tft application notes
R1LV1616RBG-5S
R1LV1616RSA-5S
uTSOP
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HM5264165-B60
Abstract: HM5264805-B60 sdram 4 bank 4096 16 HM5264165 HM5264165TT-B60 Hitachi DSA00196
Text: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832C Z Rev. 1.0 Jun. 25, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165-B60
HM5264805-B60
HM5264405-B60
16-bit
PC/100
ADE-203-832C
HM5264165
64-Mbit
1048576-word
HM5264165-B60
HM5264805-B60
sdram 4 bank 4096 16
HM5264165TT-B60
Hitachi DSA00196
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HM5264805LTT-B60
Abstract: HM5264805LTTB60 HM5264805TT-B60 Hitachi DSA00164
Text: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832D Z Rev. 2.0 Oct. 20, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165-B60
HM5264805-B60
HM5264405-B60
16-bit
PC/100
ADE-203-832D
HM5264165
64-Mbit
1048576-word
HM5264805LTT-B60
HM5264805LTTB60
HM5264805TT-B60
Hitachi DSA00164
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30PIN
Abstract: No abstract text available
Text: Section 5 CMOS DRAM Modules — A t a Glance Page Device Maximum A ccess Tlme ns 5 -3 M B 8 5 2 3 0 -1 0 -1 2 100 120 8388608 bits (1048576w x 8b) 30-pin Plastic 30-pad Plastic S IP S IM M 5-21 M B 8 5 2 3 1 -1 0 -1 2 100 120 8388608 bits (1 0 48 5 7 6w x8 b)
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1048576w
262144w
24288W
30-pin
30-pad
30PIN
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application tca 780
Abstract: MH1M36EJ7
Text: MITSUBISHI LSIs M H 1 M 3 6 E J - 6 , - 7 , - 8 , - 1 37748736-BIT 1048576-WORD BY36-BIT DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs in TSOP and eight industry standard 1M x 4 dynamic RAMs
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37748736-BIT
1048576-WORD
BY36-BIT
MH1M36EJ
1048576word
36bit
MH1M36EJ-
application tca 780
MH1M36EJ7
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Untitled
Abstract: No abstract text available
Text: blE D • bEM^f i SS 0DE047Û ‘l ô T ■ MITI MITSUBISHILSIs MH1M36EJ-6,-7,-8,-10 MITSUBISHI M E M O R Y / A S I C 37748736- BIT(1048576- WORD BY 36- BlT)DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs
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0DE047Ã
MH1M36EJ-6
MH1M36EJ
1048576word
36bit
MH1M36EJ-
b24Tfl25
37748736-BIT
1048576-WORD
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH1M36EJ - 6, - 7, - 8, - 10 37748736-BIT 1048576-WORD BY 3 6 -BIT DYNAMIC RAM DESCRIPTION The MH1M 36EJ is 1048576w ord x 36bit dynamic RAM. This consists of four industry standard 1 M x 1 dynamic RAMs PIN CONF1GURATION(TOP VIEW ) O in TSOP and eight industry standard 1 M x 4 dynamic RAMs
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MH1M36EJ
37748736-BIT
1048576-WORD
1048576w
36bit
CX116
MH1M36EJ-
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SC5124
Abstract: DHO 165
Text: HN624416N Series 1048576-word x 16-bit/2097152-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-465A Z Rev. 1.0 May. 22, 1997 Description The Hitachi HN624416N series is a 16-Mbit CMOS mask-programmable ROM organized either as 1048576word x 16-bit or 2097152-word x 8-bit. As it has realized high speed normal access 120 ns and page mode
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HN624416N
1048576-word
16-bit/2097152-word
ADE-203-465A
16-Mbit
1048576word
16-bit
2097152-word
42-pin
SC5124
DHO 165
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MH1M32EJ8
Abstract: No abstract text available
Text: blE ]> • bEMTÔES MITSUBISHI G Q5 D S 3 4 5 3 e! ■ M I T I MITSUBISHILSIs MH1M32EJ-8,-10 MEMORY/ASIC 33554432-BIT(1048576-WQRD BY 32-BIT)DYNAMIC RAM DESCRIPTION The MH1 M32EJ is 1048576word x 3 2 - bit dynamic RAM. This consists of eight industry standard 1M x 4 dynamic
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MH1M32EJ-8
33554432-BIT
1048576-WQRD
32-BIT
M32EJ
1048576word
1048576-WORD
MH1M32EJ8
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Untitled
Abstract: No abstract text available
Text: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC
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SMJ416160,
SMJ418160
1048576-WORD
16-BIT
SGMS720A
41x160-60
41x160-70
41x160-80
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SMOS182
Abstract: No abstract text available
Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1
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TMS626802,
TMS636802
1048576-WORD
SMOS182
100-MHz
S626802
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M37705E4BSP
Abstract: M37705M4B M37705E4B
Text: MITSUBISHI MICROCOMPUTERS M 37705E4BXXXSP PROM VERSION of M37705M 4BXXXSP DESCRIPTION The M37705E4BXXXSP is a sin g le -c h ip m icro com p uter d e PIN CONFIGURATION TOP VIEW signe d w ith high -pe rform an ce C M O S silicon gate tech nolo gy. This is housed in a 64-pin shrink plastic m o ld ed DIP.
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37705E4BXXXSP
M37705M
M37705E4BXXXSP
M37705M4BXXXSP
16K-byte
64-pin
25mVrms,
M37705E4BSP
M37705M4B
M37705E4B
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Untitled
Abstract: No abstract text available
Text: HN62448N Series 524288-word X 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-385B Z Rev. 2.0 Oct. 2 1 ,1996 Description The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-word by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the
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HN62448N
524288-word
16-bit/1048576-word
ADE-203-385B
524288-word
16-bits
1048576-words
0D32L
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Untitled
Abstract: No abstract text available
Text: HN62448 Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-397B Z Rev. 2.0 Oct. 2,1996 Description The Hitachi HN62448 is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the m ost suitable to th
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HN62448
524288-word
16-bit/1048576-word
ADE-203-397B
524288-words
16-bits
1048576-words
QQ32b75
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Untitled
Abstract: No abstract text available
Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase
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HN29WT800/HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
HN29WT800
HN29WB800
8-bit/512-kword
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Untitled
Abstract: No abstract text available
Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635C Z Rev. 3.0 Feb. 21,1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and
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HM51W16160
HM51W18160
1048576-word
16-bit
ADE-203-635C
576-word
16-bit.
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TMS626812
Abstract: No abstract text available
Text: TMS626812 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY _ SMOS687A -JULY 1 9 9 6- REVISED APRIL 1997 • • • Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving
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TMS626812
1048576-WORD
SMOS687A
83-MHz
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Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37702M 4LXXXGP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • W id e op erating te m p e ra tu re ra n g e . — 4 0 ~ 8 5 ‘C m icro • In te rru p ts . •.
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37702M
16-BIT
20/25ns
25mVrms,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M44402AWJ,J,L,TP,RT-6,-7,-8,-10 STATIC COLUMN MODE 4 1 9 4 3 0 4 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 4-B IT D Y N A M IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily of 1048576-w ord by 4 -b it dynam ic R A M S , fabricated w ith the high performance C M OS process, and
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M5M44402AWJ
1048576-w
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Untitled
Abstract: No abstract text available
Text: HN62W5016N Series 524288-word x 32-bit/1048576-word x 16-bit CMOS MASK Programmable ROM HITACHI Preliminary Description The HN62W5016N is a 16-Mbit CMOS mask-programmable ROM organized either as 524,288-word by 32-bit or as 1,048,576-word by 16-bit. Realizing low power consumption, this memory is allowed for
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HN62W5016N
524288-word
32-bit/1048576-word
16-bit
16-Mbit
288-word
32-bit
576-word
16-bit.
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