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    1042 SWITCHING REGULATOR Search Results

    1042 SWITCHING REGULATOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    1042 SWITCHING REGULATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OMRON 1041

    Abstract: OMRON 1070 EE-SX1018 OMRON 1018 sx1042 EE-SX1025 EE-SX1041 EE-SX1042 EE-SX1070 EE-SX1071
    Text:  EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output  Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070  Compact model with a 5-mm wide slot (EE-SX1041)


    Original     		PDF E-SX198/199/1018/1025/1041/1042/1070/1071 EE-SX1041, EE-SX1070) EE-SX1041) 12-mm EE-SX1042) EE-SX1018) EE-SX1025) EE-SX10 1-800-55-OMRON OMRON 1041 OMRON 1070 EE-SX1018 OMRON 1018 sx1042 EE-SX1025 EE-SX1041 EE-SX1042 EE-SX1070 EE-SX1071

    photomicrosensor 1041

    Abstract: OMRON 1041 EE-SX1042 EE-SX198 EE-SX1025 OMRON 1070 method d 1071 C03AE 1041 voltage regulator SX1041
    Text:  EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output  Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070  Compact model with a 5-mm wide slot (EE-SX1041)


    Original     		PDF E-SX198/199/1018/1025/1041/1042/1070/1071 EE-SX1041, EE-SX1070) EE-SX1041) 12-mm EE-SX1042) EE-SX1018) EE-SX1025) EE-SX10 EE-SX1071 photomicrosensor 1041 OMRON 1041 EE-SX1042 EE-SX198 EE-SX1025 OMRON 1070 method d 1071 C03AE 1041 voltage regulator SX1041

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


    Original     		PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    RFF60P06

    Abstract: RFG60P06E rfg60p06
    Text: RFF60P06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V TO-254AA • rDS ON = 0.030Ω GATE SOURCE DRAIN • Temperature Compensating PSPICE Model


    Original     		PDF RFF60P06 O-254AA 150oC RFF60P06 MIL-STD-750, 150oC, MIL-S-19500, 100ms; 500ms; RFG60P06E rfg60p06

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V JEDEC TO-254AA • rDS ON = 0.025Ω GATE SOURCE • Temperature Compensating PSPICE Model


    Original     		PDF RFF70N06 O-254AA 150oC RFF70N06 AN7254 AN7260 AN9321 AN9322 RFG70N06

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998


    Original     		PDF RFF70N06 RFF70N06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    certificate of compliance jantx

    Abstract: RFF60P06 RFG60P06E 8S1A rfg60p06
    Text: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. certificate of compliance jantx RFG60P06E 8S1A rfg60p06

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 Data Sheet March 1999 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET File Number 4073.2 Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF70N06 RFF70N06 MIL-S-19500. AN7254 AN7260 AN9321 AN9322 RFG70N06

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF70N06 MIL-S-19500. 150oC TA49007. AN7254 AN7260 AN9321 AN9322 RFF70N06 RFG70N06

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 Data Sheet January 2002 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF70N06 RFF70N06 MIL-S-19500. AN7254 AN7260 AN9321 AN9322 RFG70N06

    RFF60P06

    Abstract: RFG60P06E EDS819
    Text: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET Features Title FF6 06 bt A, V, 30 m, Chan- The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF60P06 RFF60P06 TA09835. RFG60P06E EDS819

    RFF60P06

    Abstract: RFG60P06E
    Text: RFF60P06 Data Sheet January 2002 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. RFG60P06E

    XRP77XX-XCM

    Abstract: XRP7714 XRP7740 XRP7713 1GB-x16 TQFN32 TQFN-32 XRP7704 SOC 5A manual monitor adapter 12v 5A
    Text: Programmable Power Technology 2010 www.exar.com Exar’s Power XR Digital Power Solutions Exar’s PowerXR ICs integrate the best of both worlds; the low cost and flexibility of digital power control as well as the robust power capabilities of high performance analog power switches. PowerXR products reduce development time from weeks to


    Original     		PDF XRP7704 XRP7740 XRP77XX-XCM XRP7714 XRP7740 XRP7713 1GB-x16 TQFN32 TQFN-32 SOC 5A manual monitor adapter 12v 5A

    UPC1042C

    Abstract: UPC1042C equivalent UPC1042 PC1042 nec 1042 SWITCHING REGULATOR 723 voltage regulator ic
    Text: NEC //PC 1042 SWITCHING REGULATOR CONTROL CIRCUIT NEC Electronics Inc. Description Pin Configuration The ^ PC1042 is a sw itching regulator control circuit designed for use in Sw itch M ode Power S u p p lie s SMPS . The ¿/PC1042 uses the Pulse Width M odulator


    OCR Scan     		PDF uPC1042 The/uPC1042 uPC1042C //PC1042 UPC1042C equivalent PC1042 nec 1042 SWITCHING REGULATOR 723 voltage regulator ic

    8618c

    Abstract: ELPAC power supply
    Text: ELPAC ELEKS/ ELPAC CMPN b?E D BBTETBT DQGOST1 SflT f l.e s iy - z r POWER-CAP - E CS Series — High Current, Low ESR ►Low ESR ►High-Current; ►High Temperature ►Small Size ^ Switching Regulators The POWER-CAP has been specifically designed to operate in the most stringent high frequency, high current


    OCR Scan     		PDF CS4A106* 8618c ELPAC power supply

    S2000F

    Abstract: TS-1042
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2000F COLOR TV HORIZONTAL OUTPUT APPLICATIONS. U n it in mm COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES: . High V o ltag e : V^j;s=1500V . Low S a tu r a tio n V o ltag e : Vqjt s a t =5V(Max.) . High Speed


    OCR Scan     		PDF S2000F 500mA S2000F TS-1042

    bu208a toshiba

    Abstract: BU208A
    Text: T O S H I B A { D I S C R E T E / O P T O } Sb 9097250 TOSHIBA <D I S C R E T E / O P T O , » ^ 1 ^ 7 2 5 5oL 08 LOO G O D ñ l D O D T - 3 2 > - ¿ > 7 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. U n i t in m m COLOR TV SWITCHING REGULATOR APPLICATIONS.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) • Designed for use in brushless DC motors • Operates over a broad range of


    OCR Scan     		PDF OHN3175U OHN3175U, OHS3175U OHN31 OHS3175U.

    Untitled

    Abstract: No abstract text available
    Text: 0 . OPTEK Product Bulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U • Features Absolute Maximum Ratings (T a = 2 5 ° C unless otherw ise noted) • Designed for use in brushless DC motors • Operates over a broad range of


    OCR Scan     		PDF OHN3175U OHN3175U, OHS3175U 3175U OHS3175U.

    OHN3175U

    Abstract: OHS3175U
    Text: 0 . OPTEK P roduct B ulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U Features A b so lu te M axim um R atings (T a = 2 5 ° C unless otherwise noted) • Designed for use in brushless DC motors • Operates over a broad range of


    OCR Scan     		PDF OHN3175U OHN3175U, OHS3175U OHS3175U

    OHN3175U

    Abstract: OHS3175U 0HS3175U
    Text: OPTEK Product Bulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U .182 (4.62) -.025 (0.64) L .0!5 (0.38) SO. 3 PL .045 (1.14) PACKAGE CENTER SILVER OR TIN PLATING OVER COPPER LEADS TO WITHIN .040 OF PACKAGE SURFACE


    OCR Scan     		PDF OHN3175U OHN3175U, OHS3175U OHS3175U 0HS3175U

    MHT10P10

    Abstract: C63H q 1363
    Text: M OTO ROLA SC 12E D X S TR S/R F MOTOROLA I b3b?254 GGflMEIG G | Order this data sheet by MHT10P10/D S E M IC O N D U C T O R TECHNICAL DATA Product Preview P o w e r Field E ffe c t T r a n s is t o r P-Channel Enhancem ent-Mode Silicon Gate T M O S T M O S PO W ER FET


    OCR Scan     		PDF MHT10P10/D T0-220 MK145BP, MHT10P10 C63H1 MHT10P10 C63H q 1363

    IRFP9240

    Abstract: CC 1038 TO-247
    Text: PD-9.481C International Ëæl Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V


    OCR Scan     		PDF IRFP9240 -200V O-247 T0-220 O-218 t50KQ CC 1038 TO-247