VM-10V
Abstract: LA5659
Text: - 9 4 - LA5659 « Œ * 3 Ë # 5 V , 1 A ffi*, m m m V V0A Vo tí * en H II H L L H - tfg m a k -m a s I 20 3 i 18 J 6 1$• h~\ S i* ■012 P*1 0 100X100X2« ^ w 8s o I - 1 1 75W «o F n U'13-jT'lMi I -4 0 -2 0 ifc 2 m 6 ss . »* hfe. 1*1 M 20 ¿0 |S IH ¡g *,T 4 -
|
OCR Scan
|
LA5659
100X100X2Â
500mA
500mA
120Hz
rS200mV
0-35mA
VM-10V
LA5659
|
PDF
|
2SD1705
Abstract: 2SB1154
Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE
|
Original
|
2SD1705
2SB1154
2SD1705
2SB1154
|
PDF
|
STR9012
Abstract: variable output voltage variable resistor 500k STR9005 resistor variable 50k capacitor 50k STR9000 STR9015 1M variable resistor
Text: ●STR9000 Series STR9000 Series 5-Terminal, Low Dropout Voltage Dropper Type •Features • • • • • • 5-terminal regulator with two screw mount package Output current: 4.0A Low dropout voltage :VDIF≤1V at IO=4A Fine adjustment of output voltage
|
Original
|
qSTR9000
STR9000
STR9005
STR9012/9015
STR9005)
STR9012)
STR9015)
STR9012
variable output voltage
variable resistor 500k
STR9005
resistor variable 50k
capacitor 50k
STR9015
1M variable resistor
|
PDF
|
2sc1846
Abstract: 2SA0885 2SA885
Text: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage
|
Original
|
2SA0885
2SA885)
2SC1846
O-126B
2sc1846
2SA0885
2SA885
|
PDF
|
3052n
Abstract: shinetsu G746 G746 shinetsu 3122N G746 SI-3002N SI-3052N SI-3092N SI-3122N SI-3152N
Text: ●SI-3002N Series SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Dropper Type •Features • • • • Compact full-mold package equivalent to TO220 Output current: 2.0A Low dropout voltage: VDIF≤1V (at IO=2.0A) Built-in foldback overcurrent, overvoltage, thermal protection circuits
|
Original
|
qSI-3002N
SI-3002N
SI-3052N
SI-3092N
SI-3122N/3152N
12I-3052N)
SI-3052N)
3052n
shinetsu G746
G746 shinetsu
3122N
G746
SI-3052N
SI-3092N
SI-3122N
SI-3152N
|
PDF
|
SLA3006M
Abstract: 3006M G746 shinetsu shinetsu G746 rohs G746 SLA3005M SLA3007M 3007M
Text: ●SLA3005M/3006M/3007M SLA3005M/3006M/3007M 4-Output, Low Dropout Voltage Dropper Type for USB Hub •Features • 4 regulators combined in one package • Insulated single inline package • SLA3005M/3006M with 5V/0.5A x 4 outputs and SLA3007M with 5V/0.5A × 3,
|
Original
|
qSLA3005M/3006M/3007M
SLA3005M/3006M/3007M
SLA3005M/3006M
SLA3007M
SLA3005M/3007M
SLA3006M
3006M
G746 shinetsu
shinetsu G746 rohs
G746
SLA3005M
3007M
|
PDF
|
500v triac 8a
Abstract: DSA00179877 TRIAC sharp 8A260VAC
Text: PR308T11ESZ/PR308T21ESZ PR308T11ESZ/ PR308T21ESZ Solid State Relay Approved by European Safety Standard • Features ■ Outline Dimensions Output Repetitive peak OFF-state voltage VDRM 600 V Non repetitive peak OFF-state voltage VDSM 600 V 0.1MIN. 5.08
|
Original
|
PR308T11ESZ/PR308T21ESZ
PR308T11ESZ/
PR308T21ESZ
PR308T11ESZ
8A260VAC
26thin
500v triac 8a
DSA00179877
TRIAC sharp
8A260VAC
|
PDF
|
2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160
|
Original
|
2SB1470
2SD2222
2SB1470
2SD2222
|
PDF
|
2SC2258
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C
|
Original
|
2002/95/EC)
2SC2258
O-126B-A1
2SC2258
|
PDF
|
2SD2000
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
|
Original
|
2002/95/EC)
2SD2000
SC-67
O-220F-A1
2SD2000
|
PDF
|
2SD1705
Abstract: 2SB1154
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SD1705
2SB1154
2SD1705
2SB1154
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2151 Silicon NPN epitaxial planar type Unit: mm Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)
|
Original
|
2002/95/EC)
2SD2151
SC-67
O-220F-A1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow
|
Original
|
2SB1503
2SD2276
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current : It RMS —6A
|
OCR Scan
|
SM6G45
SM6J45
SM6G45A
SM6J45A
SM6G45,
SM6J45,
SM6G45A,
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V R.M.S On-State Current : It RMS —8A
|
OCR Scan
|
SM8G45
SM8J45
SM8G45A
SM8J45A
SM8G45,
SM8J45,
SM8G45A,
|
PDF
|
d2494
Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in
|
Original
|
n6to4467
2SD211to214
2SC4468
2SC1828
2SC3832
2SA768to769
2SA1262
2SA770to771
2SA1725
2SA957to958
d2494
c4381
B1625 equivalent transistor
a1668 transistor
a1695 power transistor
D2495
c3852a
D1796 power transistor
c5287
D2493
|
PDF
|
IC SI-8050S 5V 3A
Abstract: sk 8050s sk a 3120c STR2012 sk 3240c sk a 3240c sk a 3050c SI-3522V SI-3132V 3522V
Text: CAUCAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in
|
Original
|
|
PDF
|
3003N TO-220
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3003N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 1.0A Symbol SI-3123N SI-3153N
|
Original
|
SI-3003N
SI-3053N
SI-3123N
3003N TO-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator ICs SI-3000R Series 5-Terminal, Built-in Reset Function, Full-Mold, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings • Reset signal output When the output voltage rises, a reset signal is output to secure the
|
Original
|
SI-3000R
UL94V-0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator ICs SI-3000C Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 1.5A • Low dropout voltage: VDIF ≤ 1V (at IO=1.5A)
|
Original
|
SI-3000C
SI-3033C:
|
PDF
|
3150J
Abstract: 3120j
Text: 1-1-1 Linear Regulator ICs SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)
|
Original
|
SI-3000J
SI-3050J
SI-3090J
SI-3120J/3150J
3150J
3120j
|
PDF
|
2SA503
Abstract: 3CK90 3CK9 2SA504
Text: JÍ T O S H I B A -CDISCRETE/OPTOJ 9097250 T O S H IB A dFI^DTTSSD bbC D IS C R E T E /O P T O 07 22 1 □□□72E1 4 | T - 3 7 “ /s' 2SA503' 2SA504, SILICON PNP EPITAXIAL TYPE (PCT PROCESS) I NDUST R I A L A P PLICATIONS Unit in m m HIGH FREQUENCY AMPLIFIER APPLICATIONS.
|
OCR Scan
|
2SA503'
2SA504,
80MHz
2SA503)
2SA504)
-150mA,
-15mA)
2SC503
2SC504.
2SA503
3CK90
3CK9
2SA504
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SC3212, 2SC3212A 2SC3212, 2SC3212A Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching •Features • • • • Package Dimensions High speed sw itching High collector-base voltage V cbo Low collecto r-em itter saturation voltage (V ce (sati)
|
OCR Scan
|
2SC3212,
2SC3212A
2SC3212
bR32A52
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Single-chip built-in FET type Switching Regulator Series Simple Step-down Switching Regulatorwith Built-in Power MOSFET BD9701FP/CP-V5/T/T-V5, BD9703FP/CP-V5/T/T-V5, BD9702CP-V5/T/T-V5 ● Description The BD9701/BD9703/BD9702 are single-channel step-down switching regulator capable of PWM operation.
|
Original
|
BD9701FP/CP-V5/T/T-V5,
BD9703FP/CP-V5/T/T-V5,
BD9702CP-V5/T/T-V5
BD9701/BD9703/BD9702
BD9701/BD9703)
BD9702)
100kHz
BD9701)
300kHz
BD9703
|
PDF
|