2SB1154
Abstract: 2SD1705
Text: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING
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2SB1154
2SD1705
10MHz
2SB1154
2SD1705
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2SD1705
Abstract: 2SB1154 2sd170
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1705
2SB1154
2SD1705
2SB1154
2sd170
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2SB1154
Abstract: 2SD1705
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features
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Original
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2002/95/EC)
2SB1154
2SD1705
SC-92
2SB1154
2SD1705
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PDF
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2SD1705
Abstract: 2SB1154
Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit
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Original
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2SD1705
2SB1154
2SD1705
2SB1154
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 Parameter
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Original
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2002/95/EC)
2SB1154
2SD1705
SC-92
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2
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Original
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2002/95/EC)
2SD1705
2SB1154
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PDF
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2SB1154
Abstract: 2SD1705
Text: SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications
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2SB1154
2SD1705
10MHz
2SB1154
2SD1705
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PDF
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2SB1154
Abstract: 2SD1705
Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage
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2SB1154
2SD1705
2SB1154
2SD1705
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2SB1154
Abstract: 2SD1705
Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
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2SB1154
2SD1705
SC-92
2SB1154
2SD1705
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PDF
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2SD1705
Abstract: 2SB1154
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 φ 3.2±0.1 • Absolute Maximum Ratings TC = 25°C
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Original
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2002/95/EC)
2SB1154
2SD1705
2SD1705
2SB1154
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PDF
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2SD1705
Abstract: 2SB1154
Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE
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2SD1705
2SB1154
2SD1705
2SB1154
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2SB1154
Abstract: 2SD1705
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1154 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -6A ·Complement to Type 2SD1705
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2SB1154
2SD1705
-100V;
2SB1154
2SD1705
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2SD1705
Abstract: 2SB1154
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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Original
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2002/95/EC)
2SD1705
2SB1154
2SD1705
2SB1154
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C
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Original
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2002/95/EC)
2SB1154
2SD1705
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE
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Original
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2SD1705
2SB1154
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PDF
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2SD1705
Abstract: 2SB1154
Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1705 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current
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Original
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2SB1154
2SD1705
2SD1705
2SB1154
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SD1705
2SB1154
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PDF
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2SD1705
Abstract: 2SB1154
Text: Power Transistors 2SB1154 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1705 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current
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Original
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2SB1154
2SD1705
2SD1705
2SB1154
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PDF
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2SB1154
Abstract: 2SD1705
Text: Inchange Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications
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Original
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2SB1154
2SD1705
2SB1154
2SD1705
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PDF
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2SD1705
Abstract: 2SB1154
Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE
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Original
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2SD1705
2SB1154
2SD1705
2SB1154
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PDF
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1705 •Features • Low collector-eim itter saturation voltage • Good linearity of DC c u rre n t gain Unit : mm 5.2max. ^ 3 .2
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OCR Scan
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2SB1154
2SD1705
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PDF
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2SD1705
Abstract: 2SB1154 01rk
Text: Power Transistors 2SD1705 2S D 1705 Silicon NPN Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r Switchin g C o m p le m e n ta r y P a ir with 2 S B 1 1 5 4 Unit 1 mm 5.2max. . 15.5m ax. . • F e a tu re s • • • • 6.9min.1 - h* in
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OCR Scan
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2SD1705
2SB1154
32flS2
2SD1705
2SB1154
01rk
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1705 2SD1705 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Sw itching C om plem entary Pair with 2SB1154 • Features Iife / 6.9min. 1 cu- - r ii • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e (V c e m )
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OCR Scan
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2SD1705
2SB1154
bT32fl52
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PDF
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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