2sc1846
Abstract: 2SA885
Text: SavantIC Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter
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2SC1846
O-126
2SA885
200MHz
2sc1846
2SA885
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2sc1846
Abstract: 2SA0885 2SA885
Text: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage
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2SA0885
2SA885)
2SC1846
O-126B
2sc1846
2SA0885
2SA885
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SA0885
2SA885)
2SC1846
O-126B
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SA0885
2SA885)
2SC1846
O-126B
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2sc1846
Abstract: 2SA0885 2SA885
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SA0885
2SA885)
2SC1846
O-126B-A1
2sc1846
2SA0885
2SA885
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2SA885
Abstract: 2sc1846
Text: SavantIC Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION
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2SA885
O-126
2SC1846
200MHz
2SA885
2sc1846
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2sc1846
Abstract: 2SA0885 2SA885
Text: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage
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2SA0885
2SA885)
2SC1846
O-126B
2sc1846
2SA0885
2SA885
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2sc1846
Abstract: 2SA885
Text: JMnic Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC1846
O-126
2SA885
200MHz
2sc1846
2SA885
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 Symbol 0.75±0.1 Rating 4.6±0.2
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2002/95/EC)
2SA0885
2SA885)
2SC1846
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2sc1846
Abstract: 2SC1846 data 2SA0885 2SA885
Text: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 2SA885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter
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2SC1846
2SA0885
2SA885)
O-126B
2sc1846
2SC1846 data
2SA0885
2SA885
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2sc1846
Abstract: 2SC1846 equivalent 2SA885 85170
Text: Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION
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2SC1846
O-126
2SA885
200MHz
2sc1846
2SC1846 equivalent
2SA885
85170
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2sc1846
Abstract: 2SC1846 equivalent 2SA885
Text: Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN
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2SA885
O-126
2SC1846
200MHz
2sc1846
2SC1846 equivalent
2SA885
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2SA885
Abstract: 2sc1846 Jmnic
Text: JMnic Product Specification 2SA885 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1846 ・Low collector-emitter saturation voltage APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION
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2SA885
O-126
2SC1846
200MHz
2SA885
2sc1846
Jmnic
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2sc1846
Abstract: 2SA0885 2SA885
Text: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 4.6±0.2
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2SA0885
2SA885)
2SC1846
O-126B-A1
2sc1846
2SA0885
2SA885
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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2sc1846
Abstract: z2v7 2SA885
Text: PANASONIC INDL/ELEK-CSEMI} 7EC D | f - n DDDÛ7Î.5 □ * 2SA885 2SA885 '> ij =1 y P N P x fcf£ Si P N P E p ita x ia l P la n a r f f c tÜ ^ W ^ it tÎ S f f l/ M e d i u m P o w e r A m p lifie r 2SC 1846 ¿ 3 ' / ^ ' j / C o m p l e m e n t a r y P a ir w ith
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2SA885
2SC1846
2SC1846
2SC1846.
O-126
O-126
z2v7
2SA885
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2SA885
Abstract: 2SC1398 2sc1846
Text: Power Transistors 2SA885 2SA885 Silicon PNP Epitaxial Planar Type Package Dim ensions AF Output Drivers C om plem entary P air with 2 S C 1 8 4 6 • Features • 3W output in com plem entary pair with 2SC1398 • TO-126 package, no insulator needed when fixing to a heat sink
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2SA885
2SC1846
2SC1398
O-126
----10mA
2SA885
2SC1398
2sc1846
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2SA885
Abstract: 2sc1846
Text: Power Transistors 2SG1846 2SC1846 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Amplifier Com plem entary Pair with 2SA885 • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEtsati • 3W o u tp u t in c o m p le m e n ta ry p air w ith 2SA 885
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2SC1846
2SA885
O-126
32flS2
G01b3Sb
-10mA
2SA885
2sc1846
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2SA885
Abstract: 2SC1846
Text: AOK AOK Semiconductor Product Specification 2SA885 S ilicon PNP Power Transistors DESCRIPTION • With TO -126 package • Complement to type 2SC1846 • Low collector-emitter saturation voltage APPLICATIONS • For low-frequency power amplification PINNING
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2SA885
O-126
2SC1846
100xi00x2mm
2SC1846
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2SC1398
Abstract: 2sc1846 2SA885 170R1
Text: Power T ransistors 2SA885 2SA885 Silicon PNP Epitaxial Planar Type Package Dim ensions AF O utput Drivers C o m plem entary Pair with 2 S C 1 8 4 6 • Features • 3W output in com plem en tary pair with 2 S C 1 3 9 8 • T O -1 2 6 p ack age , no in su lato r n ee d ed w hen fixing to a h eat sink
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2SA885
2SC1846
bT32fiS2
2SC1398
2sc1846
2SA885
170R1
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2sa899
Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Text: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU
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Ta-25t)
2SA847A
ZSA854
2SA854S
2SA872
2SA872A
2SC1980
2SA921
2SA929
2SA930
2sa899
2SC1904
2SA904A
2SA933LN
2sc2673
2SA898
2SA887
2SA881
2SA93
2sc1846
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2sc1846
Abstract: No abstract text available
Text: Power Transistors 2SC1846 2SC1846 Silicon NPN Epitaxial Planar Type • Package Dimensions Medium Power Amplifier Complementary Pair with 2SA885 ■Features • Low c o lle c to r -e m itte r sa tu ra tio n v o lta g e V cb <i «> • 3W output in co m p le m e n ta ry pair w ith 2 S A 8 8 5
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2SC1846
2SA885
2sci846
2sc1846
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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2SA899
Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
Text: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65
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2SC1763
30MHz
2SC1764
2SC1765
400MHz
2SC1775
2SC1775A
2SC1778
2SC1779
2SA899
2SC1903
2SC1792
2sc1855
2-13B1A
2SC1815L
2SA1015L
2SC1840
2SA991
2sc1846
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