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    100V, 100A MOSFET Search Results

    100V, 100A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    100V, 100A MOSFET Price and Stock

    Microchip Technology Inc APT20M16LLLG

    Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT20M16LLLG
    • 1 $24.57
    • 10 $23.54
    • 100 $20.63
    • 1000 $20.02
    • 10000 $20.02
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    Microchip Technology Inc APT10M11LVRG

    Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT10M11LVRG
    • 1 -
    • 10 $38.8
    • 100 $35.49
    • 1000 $35.49
    • 10000 $35.49
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    Microchip Technology Inc APT12060LVRG

    Power MOSFET 1K2V 20A Avalanche
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT12060LVRG
    • 1 $19.44
    • 10 $17.86
    • 100 $16.32
    • 1000 $15.83
    • 10000 $15.83
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    Microchip Technology Inc APT20M20B2LLG

    Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT20M20B2LLG
    • 1 $19.93
    • 10 $18.31
    • 100 $16.73
    • 1000 $16.23
    • 10000 $16.23
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    Microchip Technology Inc APT20M16B2LLG

    Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT20M16B2LLG
    • 1 -
    • 10 $31.33
    • 100 $22.43
    • 1000 $22.43
    • 10000 $22.43
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    Find more 100V, 100A MOSFET price and stock on Findchips.com

    100V, 100A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    "MOSFET Module"

    Abstract: E80276 FM200TU-2A
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated


    Original     		FM200TU-2A E80276 E80271 "MOSFET Module" E80276 FM200TU-2A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated


    Original     		FM200TU-2A E323585 March-2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated


    Original     		FM200TU-2A E80276 E80271 30K/W PDF

    DIODE T25

    Abstract: DIODE T25 4 E80276 FM200TU-2A
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated


    Original     		FM200TU-2A E80276 E80271 30K/W DIODE T25 DIODE T25 4 E80276 FM200TU-2A PDF

    Mosfet

    Abstract: SSF1010
    Text: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF1010 O-220 Mosfet SSF1010 PDF

    d20nf10

    Abstract: JESD97 STD20NF10 STD20NF10T4 CTJ3 D20NF
    Text: STD20NF10 N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on ID STD20NF10 100V <0.045Ω 25A(1) 1. Current limited by package 3 • Exceptional dv/dt capability ■ Application oriented characterization


    Original     		STD20NF10 d20nf10 JESD97 STD20NF10 STD20NF10T4 CTJ3 D20NF PDF

    Untitled

    Abstract: No abstract text available
    Text: STD20NF10 STD20NF10-1 N-channel 100V - 0.038Ω - 100A - DPAK/IPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STD20NF10-1 100V <0.045Ω 25A(1) STD20NF10 100 <0.045Ω 25A(1) 1. Current Limited by Package • Exceptional dv/dt capability


    Original     		STD20NF10 STD20NF10-1 STD20NF10-1 PDF

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A PDF

    Untitled

    Abstract: No abstract text available
    Text: AP85T10AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance Fast Switching Characteristic G RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 8m ID 100A S Description


    Original     		AP85T10AGP-HF O-220 100us 100ms PDF

    100V 100A Mosfet

    Abstract: TM-04 E80276 FM200TU-2A
    Text: 三菱半導体〈MOSFETモジュール〉 FM200TU-2A 大電力スイッチング用 絶縁形 FM200TU-2A ● ID rms . 100A ● VDSS . 100V


    Original     		FM200TU-2A E80276 E80271 100V 100A Mosfet TM-04 E80276 FM200TU-2A PDF

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    MAX1370

    Abstract: APT10M09LVR
    Text: APT10M09B2VR APT10M09LVR 100V 100A 0.009W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M09B2VR APT10M09LVR O-264 O-264 APT10M09 O-247 MAX1370 APT10M09LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: STB100NF03L-03-1 N-CHANNEL 100V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION


    Original     		STB100NF03L-03-1 O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11B2VR O-247 APT10M1B2VR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09 O-247 PDF

    APT10M11B2VFR

    Abstract: TF6646 APT10M11LVFR
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 APT10M11B2VFR TF6646 APT10M11LVFR PDF

    APT10M09B2VFR

    Abstract: APT10M09LVFR
    Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247 APT10M09LVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP85T10AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 100V R DS ON 8mΩ ID 100A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with


    Original     		AP85T10AGP-HF-3 O-220 O-220 AP85T10A 85T10AGP PDF

    AOTF12N60

    Abstract: AOT12N60 VDS-100V AOTF12
    Text: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance


    Original     		AOT12N60 AOTF12N60 AOT9610/AOTF9610 AOT12N60 AOTF12N60 O-220 O-220F VDS-100V AOTF12 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM20UM05S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 5m max @ Tj = 25°C ID = 317A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G


    Original     		APTM20UM05S PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM20UM09S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 9m max @ Tj = 25°C ID = 195A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G


    Original     		APTM20UM09S PDF

    N mos 100v 100A

    Abstract: No abstract text available
    Text: SEM E mi SM L10M 11LVR LAB 5 T H G E N E R A T IO N M O S F E T T O -2 6 4 A A P ackage O utline Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pin 1 - Gate Pin 2 - Drain Pin 3 - Source • • • • V qss 100V ^D(cont) 100A


    OCR Scan     		11LVR O-264 N mos 100v 100A PDF