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    APT10M11LVFR Search Results

    APT10M11LVFR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT10M11LVFR Advanced Power Technology High Voltage N-Channel enhancement mode power MOSFET Original PDF
    APT10M11LVFRG Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.011; BVDSS (V): 100; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247

    APT10M11B2VFR

    Abstract: TF6646 APT10M11LVFR
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 APT10M11B2VFR TF6646 APT10M11LVFR