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    K7A323600M

    Abstract: K7B321825M-QC65 K7A321800M
    Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		PDF K7A323600M K7A321800M 1Mx36 2Mx18 2Mx18-Bit 165FBGA K7A3236 165FBGA K7A323600M K7B321825M-QC65 K7A321800M

    K7M321825M

    Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
    Text: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		PDF K7M323625M K7M321825M 1Mx36 2Mx18 2Mx18-Bit 165FBGA 165FBGA x18/x36 K7M321825M K7M321825M-QC75 K7M323625M K7M323625M-QC75

    K7A401800B-QC

    Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC

    samsung date code decorder

    Abstract: caller id IN4007 B2 caller id converter dtmf to fsk LM358 IN4007 SMB IN4007 caller id converter dtmf caller id converter fsk to dtmf lm358 sum
    Text: S3P7588X 4-BIT RISC MICROPROCESSOR USER'S MANUAL Revision 0 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible


    Original     		PDF S3P7588X samsung date code decorder caller id IN4007 B2 caller id converter dtmf to fsk LM358 IN4007 SMB IN4007 caller id converter dtmf caller id converter fsk to dtmf lm358 sum

    K7A401800B

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
    Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA K7A401800B K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC

    K7M643635M-Q

    Abstract: No abstract text available
    Text: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz


    Original     		PDF K7N643631M K7N641831M 2Mx36 4Mx18 4Mx18-Bit 200MHz) K7N643635M K7N643631M) 50REF K7M643635M-Q

    K7N401801B

    Abstract: K7N403601B
    Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


    Original     		PDF K7N403601B K7N401801B 128Kx36 256Kx18 256Kx18-Bit 350mA 290mA 330mA 270mA K7N401801B K7N403601B

    K7B801825B

    Abstract: K7B803625B
    Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


    Original     		PDF K7B803625B K7B801825B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7B801825B K7B803625B

    K7N161801A

    Abstract: K7N163601A
    Text: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.


    Original     		PDF K7N163601A K7N161801A 512Kx36 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163601A

    Untitled

    Abstract: No abstract text available
    Text: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature


    Original     		PDF K7A163608A K7A163208A K7A161808A 512Kx36/x32 1Mx18 1Mx18-Bit

    K7A161801M

    Abstract: K7A163601M advh
    Text: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85


    Original     		PDF K7A163601M K7A161801M 512Kx36 1Mx18 1Mx18-Bit 117MHz 150mA 110mA 130mA K7A161801M K7A163601M advh

    K7M321825M

    Abstract: K7M323625M
    Text: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAM TM 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O


    Original     		PDF K7M323625M K7M321825M 1Mx36 2Mx18 2Mx18-Bit 65V/-0 100-TQFP-1420A /119BGA K7M321825M K7M323625M

    NC-2H

    Abstract: K7B161825A K7B163225A K7B163625A
    Text: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		PDF K7B163625A K7B163225A K7B161825A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit 165FBGA NC-2H K7B161825A K7B163225A K7B163625A

    K7N161801A

    Abstract: K7N163201A K7N163601A
    Text: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		PDF K7N163601A K7N163201A K7N161801A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163201A K7N163601A

    K7A161801A

    Abstract: K7A163201A K7A163601A
    Text: K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature .


    Original     		PDF K7A163601A K7A163201A K7A161801A 512Kx36/32 1Mx18 1Mx18-Bit K7A1636 K7A161801A K7A163201A K7A163601A

    K7M801825B

    Abstract: K7M803625B
    Text: K7M803625B K7M801825B Preliminary 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAM TM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 18. 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7M803625B K7M801825B 256Kx36 512Kx18 512Kx18-Bit K7M801825B K7M803625B

    K7B161825A

    Abstract: K7B163625A
    Text: K7B163625A K7B161825A Preliminary 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers.


    Original     		PDF K7B163625A K7B161825A 512Kx36 1Mx18 1Mx18-Bit 65V/-0 K7B161825A K7B163625A

    Untitled

    Abstract: No abstract text available
    Text: K7N163645A K7N163245A K7N161845A 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		PDF K7N163645A K7N163245A K7N161845A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636

    Untitled

    Abstract: No abstract text available
    Text: K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin.


    Original     		PDF K7A203600B K7A203200B K7A201800B 64Kx36/x32 128Kx18 64Kx36 64Kx32 128Kx18-Bit 200MHz

    interfacing ADC with 8086 microprocessor

    Abstract: teaklite 3 instruction opcode MC86000 0.18-um CMOS Flash technology 8086-bus mc8600 I8086 teaklite DRAM 4416 LQPF 208 Package
    Text: S5N8947 DATA SHEET GENERAL DESCRIPTION Samsung's S5N8947 16/32-bit RISC microcontroller is a cost-effective, high-performance microcontroller solution. The S5N8947 is designed as 2-channel 10/100Mbps Ethernet controller for use in managed communication hubs and routers. The S5N8947 also provides ATM Layer SAR Segmentation and Reassembly


    Original     		PDF S5N8947 16/32-bit 10/100Mbps interfacing ADC with 8086 microprocessor teaklite 3 instruction opcode MC86000 0.18-um CMOS Flash technology 8086-bus mc8600 I8086 teaklite DRAM 4416 LQPF 208 Package

    Untitled

    Abstract: No abstract text available
    Text: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7N403609B K7N403209B K7N401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 470mA 400mA

    DN-12

    Abstract: TSOP RECEIVER 128M NAND Flash Memory compact flash PCMCIA SRAM Card picu S3F49FAX USB Flash Memory SAMSUNG S3F49FAXZA S3F49FAXZZ
    Text: S3F49FAX for Compact Flash SPECIFICATION Revision 1.0 HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) SPECIFICATION S3F49FAX Table of Contents 1.1 1.2 1.3 2.1 2.2 Introduction .2


    Original     		PDF S3F49FAX S3F49FAX 100-pin 100-TQFP-1414) 100-TQFP-1414 100-TQFP-1414 DN-12 TSOP RECEIVER 128M NAND Flash Memory compact flash PCMCIA SRAM Card picu USB Flash Memory SAMSUNG S3F49FAXZA S3F49FAXZZ

    Untitled

    Abstract: No abstract text available
    Text: KM736V849 KM718V949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Preliminary 0.1 1. Changed DC parameters ICC; from 450mA to 420mA at 150MHZ.


    Original     		PDF KM736V849 KM718V949 256Kx36 512Kx18 256Kx36-Bit 450mA 420mA 150MHZ. 119BGA

    Untitled

    Abstract: No abstract text available
    Text: K7A163601A K7A163201A K7A161801A 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 0.1 0.2 Initial draft 1. Add x32 org and industrial temperature .


    Original     		PDF K7A163601A K7A163201A K7A161801A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit K7A1636