64KX32
Abstract: 7C13 CY7C1329
Text: fax id: 1080 1CY 7C13 29 CY7C1329 PRELIMINARY 64K x 32 Synchronous-Pipelined Cache RAM Features Functional Description • Low 1.65 mW standby power (f=0, L version) The CY7C1329 is 3.3V 64K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary
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CY7C1329
CY7C1329
100-MHz
64KX32
7C13
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Untitled
Abstract: No abstract text available
Text: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature
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K7A163608A
K7A163208A
K7A161808A
512Kx36/x32
1Mx18
1Mx18-Bit
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K7A161801M
Abstract: K7A163601M advh
Text: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85
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K7A163601M
K7A161801M
512Kx36
1Mx18
1Mx18-Bit
117MHz
150mA
110mA
130mA
K7A161801M
K7A163601M
advh
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K d998 transistor
Abstract: lz 02 1068 D844 voltage regulator
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
K d998 transistor
lz 02 1068
D844 voltage regulator
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CY7C1382DV33-200BZI
Abstract: No abstract text available
Text: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation
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CY7C1380DV33
CY7C1382DV33
18-Mbit
CY7C1380DV33/CY7C1382DV33
CY7C1382DV33-200BZI
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Untitled
Abstract: No abstract text available
Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)
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CY7C1347G
CY7C1347G
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CY7C1360C-250BGC
Abstract: CY7C1360C CY7C1362C CY7C1360C-166BZI
Text: CY7C1360C CY7C1362C PRELIMINARY 9-Mbit 256K x 36/512K x 18 Pipelined SRAM Functional Description[1] Features • • • • • • • • • • • • • • • • Supports bus operation up to 250 MHz Available speed grades are 250, 200, and 166 MHz
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CY7C1360C
CY7C1362C
36/512K
250-MHz
200-MHz
166-MHz
CY7C1360C-250BGC
CY7C1360C
CY7C1362C
CY7C1360C-166BZI
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CY7C1325G
Abstract: CY7C1325G-133AXC CY7C1325G-133AXI CY7C1325G-133BGC CY7C1325G-133BGI CY7C1325G-133BGXC CY7C1325G-133BGXI
Text: CY7C1325G PRELIMINARY 4-Mbit 256K x 18 Flow-Through Sync SRAM Functional Description[1] Features • 256K X 18 common I/O • 3.3V –5% and +10% core power supply (VDD) • 2.5V or 3.3V I/O supply (VDDQ) • Fast clock-to-output times — 6.5 ns (133-MHz version)
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CY7C1325G
133-MHz
117-MHz
100-MHz
100-pin
119-ball
CY7C1325G
CY7C1325G-133AXC
CY7C1325G-133AXI
CY7C1325G-133BGC
CY7C1325G-133BGI
CY7C1325G-133BGXC
CY7C1325G-133BGXI
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Transistor TT 2246
Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23
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3/SOT-23
6/SOT-23
10/uMAX
3/SC-70
Transistor TT 2246
TT 2206 datasheet
apm 4906
TT 2206
transistor tt 2206
tt 2246
bt 7377
SOT-23 AAAA
bc 5478
AAXZ
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CY7C1327G
Abstract: CY7C1327G-250AXC CY7C1327G-250AXI CY7C1327G-250BGC CY7C1327G-250BGI CY7C1327G-250BGXC CY7C1327G-250BGXI
Text: CY7C1327G PRELIMINARY 4-Mbit 256K x 18 Pipelined Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation • 256K x18 common I/O architecture • 3.3V core power supply • 3.3V / 2.5V I/O operation • Fast clock-to-output times
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CY7C1327G
250-MHz
225-MHz
200-MHz
CY7C1327G
CY7C1327G-250AXC
CY7C1327G-250AXI
CY7C1327G-250BGC
CY7C1327G-250BGI
CY7C1327G-250BGXC
CY7C1327G-250BGXI
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a42 a331
Abstract: omap 310 TMS320C55x CSL USB VLYNQ C6000 OMAP5912 SPRU375 TMS320C6000 stt a227 a44 a331
Text: OMAP5912 ARM Chip Support Library Reference Guide Literature Number: SPRU816 August 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any
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OMAP5912
SPRU816
accorda-24
Index-11
a42 a331
omap 310
TMS320C55x CSL USB
VLYNQ
C6000
OMAP5912
SPRU375
TMS320C6000
stt a227
a44 a331
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Untitled
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
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WED2ZL361MSJ35BC
Abstract: WED2ZL361MSJ38BC WED2ZL361MSJ42BC WED2ZL361MSJ
Text: WED2ZL361MSJ White Electronic Designs 1M x 36 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION n Fast clock speed: 250, 225, 200, 166, 150, 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an
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WED2ZL361MSJ
133MHz
WED2ZL361MSJ26BC
WED2ZL361MSJ28BC
WED2ZL361MSJ30BC
WED2ZL361MSJ35BC
WED2ZL361MSJ38BC
WED2ZL361MSJ42BC
WED2ZL361MSJ26BI*
WED2ZL361MSJ28BI
WED2ZL361MSJ35BC
WED2ZL361MSJ38BC
WED2ZL361MSJ42BC
WED2ZL361MSJ
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Untitled
Abstract: No abstract text available
Text: CY7C1361C CY7C1363C PRELIMINARY 9-Mbit 256K x 36/512K x 18 Flow-Through SRAM Functional Description[1] Features • Supports 133-MHz bus operations The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed
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CY7C1361C
CY7C1363C
36/512K
133-MHz
CY7C1361C/CY7C1363C
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adsh 13
Abstract: intel 80486 CY7C1031 CY7C1032 VXXXX
Text: CY7C1031 CY7C1032 PRELIMINARY ?CYPRESS Functional Description continued Single Write Accesses Initiated by ADSP This access is initiated when the following conditions are satisfied at clock rise: (1) is LOW and (2) AD5P is LOW. ADSP-triggered write cycles are completed in two clock periods. The address at Ao
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CY7C1031
CY7C1032
CY7C1031
CY7C1032will
52-Lead
CY7C1032-
CY7C1032â
CY7C1032-8NC
adsh 13
intel 80486
CY7C1032
VXXXX
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY '# CYPRESS 32Kx 18 Synchronous Cache RAM Features • Direct interface with the processor and external cache controller • Supports 66-MHz Pentium micro processor cache systems with zero wait states • Asynchronous output enable • I/Os capable o f 3.3V operation
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66-MHz
CY7C178)
CY7C179)
CY7C178
CY7C179
52-pin
CY7C179â
52-Lead
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10EZ11
Abstract: 1bw sot 23 W25P243AF-4
Text: Preliminary W25P243A sSSSs Electronics Corp. 64K x 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W25P243A is a high-speed, low-power, synchronous-burst pipelined, CMOS static RAM organized as 65,536 x 64 bits that operates on a single 3.3-volt power supply. A built-in two-bit burst
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W25P243A
W25P243A
-S77E555i:
5121fjii
S52-27SS2Î
S85-2
7-i37SC2
10EZ11
1bw sot 23
W25P243AF-4
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Untitled
Abstract: No abstract text available
Text: W25P022A Gyinbond V fm v 64K x 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM Electronics Corp. GENERAL DESCRIPTION The W25P022A is a high-speed, low-power, synchronous-burst pipelined CMOS static RAM organized as 65,536 x 32 bits that operates on a single 3.3-volt power supply. A built-in two-bit burst
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W25P022A
W25P022A
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Untitled
Abstract: No abstract text available
Text: CY7B173 CY7B174 CYPRESS SEMICONDUCTOR Features • S u p p orts 50-M H z cach e system s • 3 2 K by 9 com m on I/O • B iC M O S for op tim u m speed/pow er • 14-ns a ccess delay clock to ou tp u t • Two-bit w rap arou nd co u n ter su p p ort in g th e 486 b u rst seq u en ce (7B 173)
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CY7B173
CY7B174
14-ns
--18LC
--18L
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00Q01
Abstract: ZQ50A BWRO
Text: PRELIMINARY CY7C1337 32K x 32 Synchronous-Pipelined Cache RAM Features • Low 660 |xW standby power (f=0, L version) • Supports 117-MHz bus operations with zero wait states • Fully registered Inputs and outputs for pipelined oper ation • 32K x 32 common I/O architecture
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CY7C1337
117-MHz
100-MHz
100TQFP
00Q01
ZQ50A
BWRO
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Untitled
Abstract: No abstract text available
Text: J5T ADVANCED INFORMATION CY82C694 Pentium hyperCache™ Chipset 128KB Expansion RAM Features • Interfaces directly to hyperCache™ Chipset at 66 MHz with 0 wait states • Fully registered inputs and outputs in Pipelined mode operation • 16K x 64 common I/O architecture
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CY82C694
128KB
66-MHz
128-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY82C692 Pentium hyperCache™ Chipset Data-Path/Integrated Cache for h C -VX, h C -D X Solutions Features Two-bit wraparound counter supporting Intel Burst or Linear burst sequence Supports 3-1-1-1 Level 2 cache operation up to 66 MHz bus speed
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CY82C692
CY82C691
CY82C693
64-bit
128-KB)
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EQUIVALENT cd 1031 cs
Abstract: 7C1031
Text: CY7C1031 CY7C1032 PRELIM INARY 64K x 18 Synchronous Cache RAM • Direct interface with the processor and external cache controller • Asynchronous output enable • VOs capable of 33V operation • JEDEC-standard pinout • 52-pin PLCC and PQFP packaging
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CY7C1031
CY7C1032
66-MHz
7C1031)
7C1032)
52-pin
EQUIVALENT cd 1031 cs
7C1031
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V63C31321024 32K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM PRELIMINARY Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31321024 is a high-speed synchro nous burst pipelined CMOS SRAM organized as 32,768 words by 32 bits that supports both ¡486/
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V63C31321024
100-pin
680X0/Power
V63C31321024
0M02MIN.
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