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    100LT Search Results

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    100LT Price and Stock

    Central Semiconductor Corp CTLSH10-100L-TR13-PBFREE

    DIODE SCHOTTKY 100V 10A TLM364
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    DigiKey CTLSH10-100L-TR13-PBFREE Reel 55,000 5,000
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    TDK Corporation MLZ2012N100LTD25

    FIXED IND 10UH 500MA 300MOHM SMD
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    DigiKey MLZ2012N100LTD25 Reel 44,000 2,000
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    Avnet Americas MLZ2012N100LTD25 Ammo Pack 16 Weeks, 3 Days 1
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    Mouser Electronics MLZ2012N100LTD25 99,041
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    Newark MLZ2012N100LTD25 Cut Tape 3,640 1
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    TME MLZ2012N100LTD25 2,030 1
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    Win Source Electronics MLZ2012N100LTD25 188,051
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    TDK Corporation MLZ1608N100LTD25

    FIXED IND 10UH 300MA 600MOHM SMD
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    DigiKey MLZ1608N100LTD25 Reel 20,000 4,000
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    Avnet Americas MLZ1608N100LTD25 Reel 20,000 15 Weeks 4,000
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    MLZ1608N100LTD25 Ammo Pack 16 Weeks, 4 Days 1
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    Mouser Electronics MLZ1608N100LTD25 96,556
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    Newark MLZ1608N100LTD25 Reel 20,000 4,000
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    MLZ1608N100LTD25 Cut Tape 15,125 1
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    TTI MLZ1608N100LTD25 Reel 4,000 4,000
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    Avnet Abacus MLZ1608N100LTD25 19 Weeks 4,000
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    New Advantage Corporation MLZ1608N100LTD25 16,000 1
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    TDK Corporation AVRF060X100LT242

    ESD NOTCH FILTER 7VDC/2.4GHZ
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    DigiKey AVRF060X100LT242 Reel 15,000 15,000
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    Avnet Americas AVRF060X100LT242 Reel 4 Weeks 15,000
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    Mouser Electronics AVRF060X100LT242 9,512
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    Newark AVRF060X100LT242 Cut Tape 17,470 10
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    Avnet Abacus AVRF060X100LT242 15 Weeks 30,000
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    Chip One Stop AVRF060X100LT242 Cut Tape 14,000
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    onsemi NSS30100LT1G

    TRANS PNP 30V 1A SOT23-3
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    DigiKey NSS30100LT1G Digi-Reel 4,931 1
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    NSS30100LT1G Cut Tape 4,931 1
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    NSS30100LT1G Reel 3,000 3,000
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    Avnet Americas NSS30100LT1G Reel 10 Weeks 9,000
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    Mouser Electronics NSS30100LT1G 6,437
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    Newark NSS30100LT1G Cut Tape 8,675 5
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    Rochester Electronics NSS30100LT1G 297,927 1
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    Avnet Asia NSS30100LT1G 10 Weeks 9,000
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    EBV Elektronik NSS30100LT1G 12 Weeks 3,000
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    New Advantage Corporation NSS30100LT1G 6,000 1
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    Win Source Electronics NSS30100LT1G 11,000
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    100LT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LSC BSCAN-1: IEEE 1149.1 Multiple Scan Port Addressable Buffer Introduction Functional Overview The LSC BSCAN-1 is a multiple boundary scan test access port TAP addressable buffer function that can be accessed through a standard IEEE 1149.1 interface. With three Local Scan Ports (LSP), the BSCAN-1 function can be structured as hierarchical ports with the ability


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    PDF

    CY7C1370DV25-167AXC

    Abstract: CY7C1370DV25-167BZI MB1028
    Text: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original
    CY7C1370DV25 CY7C1372DV25 18-Mbit CY7C1372DV25 CY7C1370DV25-250AXC CY7C1370DV25-167AXCT CY7C1370DV25-167AXC CY7C1370DV25-167BZI MB1028 PDF

    J-STD-020A

    Abstract: Compound 60RH Ablestik 2000 J-STD-020-A
    Text: Cypress Semiconductor Package Qualification Report QTP# 99346 VERSION 1.0 March, 2000 235° C Reflow Profile 100-pin TQFP ≤ ≤14 x 14 x 1 mm Anam, Korea CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Cypress Semiconductor


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    100-pin 100L-TQFP 100pin CY7C4205V-ASC CY7C4271-AC CY7C0251-AC J-STD-020A Compound 60RH Ablestik 2000 J-STD-020-A PDF

    UM61L3232AF-7

    Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
    Text: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write


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    UM61L3232A 100-pin 10jiA. UM61L3232AF-5 UM61L3232AE-5 UM61L3232AF-6 UM61L3232AE-6 UM61L3232AF-7 UM61L3232AE-7 um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af PDF

    Untitled

    Abstract: No abstract text available
    Text: J. TT en <n 5EC T - > . " A w - A CSCALE 10-13 — I w NOTES, \ 1 o n _ _ r 1 u [ 1 v \TL_ _ A CL 2 .5^ \- _ 2 .5 Ü 1 r « N LU i- M A T E R I A L ; H O U S I N G : L . C . PCHIGH TEMP T H ER M O PLASTIC UL 9 4 V - 0 , N A T U R A L .


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    19-MAY- PDF

    BUK455-400B

    Abstract: BUK455 BUK455-400A T0220AB
    Text: Philips Components BUK455-400A BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK455-400A BUK455-400B BUK455 -400A -400B T0220AB; M89-1158/RC BUK455-400B BUK455-400A T0220AB PDF

    1B09 transistor

    Abstract: 100-P BUK444-600B 1B09
    Text: P H IL IP S IN T E R N A T IO N A L b 5 ED H 7 1 1 0 0 2 b O G b B 'ìT bT b O«PHIN Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope.


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    BUK444-600B OT186 1B09 transistor 100-P 1B09 PDF

    R2622

    Abstract: No abstract text available
    Text: PRODUCT NO POLARISED POS 94253-001 94253-006 PIN 20 PIN 20, 27 RECOMENDED PCB HOLE LAYOUT 0,00 -f’-f' o o o o o o O O O O ooooooooooo 0,107 0.000 O O 0,0 ooqo 1,65 0,065 4,19 0,165 1.02 »0.08 0^040 *0’003 DIA 45X ‘J JJ DIA(4X) 0,060 *0'003 8,51 1,02


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    100lT 25X45 25X45° 01X45° 03AUG R2622 PDF

    CO6R

    Abstract: isplsi2 00LQ
    Text: Lattice ii*Coipo°atfont0r ispLSI• 2096E In-System Programmable SuperFAST High Density PLD &SEBSSB Features • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 4000 PLD Gates — 96 I/O Pins, Two Dedicated Inputs — 96 Registers — High Speed Global Interconnect


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    2096E 2096E 0212/2096E Mhfc35LT128 100LT128 00LQ128 128-Pin CO6R isplsi2 00LQ PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a


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    BUK565-200A SQT404 PDF

    UM61L3232

    Abstract: UM61L UM61L3232f UM61 UM61L3232F-7
    Text: isM s\ PRELIMINARY UM61L3232 Series 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write


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    UM61L3232 100-pin UM61L3232F-5 UM61L3232E-5 UM61L3232F-6 UM61L3232E-6 UM61L3232F-7 UM61L3232E-7 UM61L3232F-8 UM61L UM61L3232f UM61 PDF

    17815t

    Abstract: No abstract text available
    Text: Regulator ICs Standard 78 series, 3-terminal regulator B A 17800T/FP series The B A 1 7 8 0 0 T and B A 1 7 8 0 0 F P Series are 3-term inal, fixed positive ou tput voltage regulators. These regulators are used to provide a stabilized output voltage from a fluctuating DC input voltage.


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    17800T/FP BA17800T/FP 17815t PDF

    Untitled

    Abstract: No abstract text available
    Text: DS90CR483A,DS90CR484A DS90CR483A/DS90CR484A 48-Bit LVDS Channel Link SER/DES 33-112 MHz Texa s In s t r u m e n t s Literature Number: SNLS291 N a t i o n a l DS90CR483A / DS90CR484A 48-Bit LVDS Channel Link SER/DES ± 3 3 - 1 1 2 MHz General Description The DS90CR483A transm itter converts 48 bits of CMOS/TTL


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    DS90CR483A DS90CR484A DS90CR483A/DS90CR484A 48-Bit SNLS291 DS90CR484A PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


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    0Db431b T0220AB BUK655-500B 711002b aab432D PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice* “ ; S e m ico nd u cto r • ■ ■ C orporation Features ispLSI 2064V High-Density Programmable Logic Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — 2000 PLD Gates 64 and 32 I/O Pin Versions, Four Dedicated Inputs


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    100MHz 064V-80LJ84 84-Pin 064V-80LT100 100-Pin 064V-80LJ44 44-Pin ispLSI2064V-80LT44 064V-60LJ84 PDF

    isplsi2064

    Abstract: No abstract text available
    Text: Lattice* “ ; S e m ico nd u cto r • ■ ■ C orporation Features ispLSI 2064V High-Density Programmable Logic Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — • • • • • 2000 PLD Gates 64 and 32 I/O Pin Versions, Four Dedicated Inputs


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    100MHz 064V-80LJ84 84-Pin 064V-80LT100 100-Pin 064V-80LJ44 44-Pin ispLSI2064V-80LT44 064V-60LJ84 isplsi2064 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice* “ ; S e m ico nd u cto r • ■ ■ C orporation Features ispLSI 2064V High-Density Programmable Logic Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — 2000 PLD Gates 64 and 32 I/O Pin Versions, Four Dedicated Inputs


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    100MHz 064V-80LJ84 84-Pin 064V-80LT100 100-Pin 064V-80LJ44 44-Pin ispLSI2064V-80LT44 064V-60LJ84 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattica ;Semiconductor I Corporation Features ispLSI 2064V High-Density Programmable Logic Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — 2000 PLD Gates 64 and 32 I/O Pin Versions, Four Dedicated Inputs 64 Registers High Speed Global Interconnect


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    100MHz 064V-100LJ84 84-Pin -100LT100 100-Pin 064V-80LJ84 064V-80LT100 064V-80LJ44 PDF

    TRANSISTOR FS 10 TM

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification TrenchMOS transistor Logic level FET FEATURES PHP87N03LT, PHB87N03LT SYMBOL QUICK REFERENCE DATA VDSS = 25 V • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


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    PHP87N03LT, PHB87N03LT PHP87N03LT T0220rrunr TRANSISTOR FS 10 TM PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTI-TURN PO TEN TIO M ETER S MODEL 533 Description Three Turn 7/8* Dia., 1/4* Shaft 537 552 Three Turn 7 /8 'Dia., 1/8 'Shaft Page 38 Three Turn 7/8" Dia., 1/4' Shaft Bushing Wirewound Page 38 50 f t to 20Kft 5 ftto 6 0 K ft so n to 20«n 5ft to 60Kft 5ft to 20Kft


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    20Kft 60Kft 45Kft 500ft 500ft 100ft PDF

    2SK2690

    Abstract: 2SK2690-01 SC-65 TI SVG
    Text: SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2SK2690-01 : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED DRAWN CHECKED -¿a Fuji Electric Co.,Ltd. V, & 1.Scope This specifies Fuji Power MO S F ET 2 S K2690-01


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    2SK2690-01 0257-R-003a R-003a 2SK2690 2SK2690-01 SC-65 TI SVG PDF

    BUK456-60H

    Abstract: T0220AB transistor wm cms
    Text: N AUER PHILIPS/DISCRETE b'JE D • bbS3T31 DD3Qb75 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose


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    DD3Qb75 BUK456-60H T0220AB BUK456-60H transistor wm cms PDF