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    100GXHH Search Results

    100GXHH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100GXHH22 Toshiba DIODE (HIGH SPEED RECTIFIER APPLICATIONS) Scan PDF
    100GXHH22 Toshiba FAST RECOVERY DIODE SILICON DIFFUSED TYPE Scan PDF

    100GXHH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


    OCR Scan     		PDF SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G

    Untitled

    Abstract: No abstract text available
    Text: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 4500V :F AV = 1°0 a M A X IM U M RATINGS CHARACTERISTIC


    OCR Scan     		PDF 100GXHH22

    100GXHH22

    Abstract: No abstract text available
    Text: TOSHIBA 100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage • V r r m = 4500V • Average Forward Current • lF AV = 100A • Reverse Recovery Time • tj>j*—5.5^s


    OCR Scan     		PDF 100GXHH22 3-57A1A 100GXHH22

    100GXHH22

    Abstract: No abstract text available
    Text: TOSHIBA 100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time v RRM = 4500V ÏF AV = 100 a tj»j»—5*5jus


    OCR Scan     		PDF 100GXHH22 00GXHH22 100GXHH22

    Untitled

    Abstract: No abstract text available
    Text: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE m n riY H H ? • w i r 'w m m ■ ■ ■ ■ HIGH SPEED RECTIFIER APPLICATIONS U nit in mm • Repetitive Peak Reverse Voltage : V r r ]\/[ = 4500V • Average Forward C urrent : Ip AV = 100A


    OCR Scan     		PDF 100GXHH22

    6B4B41

    Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
    Text: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N


    OCR Scan     		PDF DO-41 DO-15 D041SS 6B4B41 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42

    500EXH21

    Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
    Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that


    OCR Scan     		PDF SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


    OCR Scan     		PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v

    100gxhh21

    Abstract: 1000GXHH22 21133 100gxhh
    Text: ALPHANUMERICAL INDEX GATE TURN-OFF GTO THYRISTOR — Asymmetrical Type — Low Snubber Type S G 8 0 0 R 2 4 . 59 S G 8 0 0 U 2 4 . 59 S G 8 0 0 W 2 4 . 59


    OCR Scan     		PDF 100GXHH21. 300EXH 500EXH 500YKH 800EXH 1000GXHH22. 1000GXHH23. 1200G 100gxhh21 1000GXHH22 21133 100gxhh

    gate turn off thyristors

    Abstract: 500EXH21 800gxhh21 800exh21
    Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that


    OCR Scan     		PDF 1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21