Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF6S9045
MRF6S9045NR1/NBR1.
MRF6S9045MR1
MRF6S9045MBR1
MRF6S9045MR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110
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MRF5S21100H
MRF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130H
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
A113
A114
A115
AN1955
C101
JESD22
MRF5S9070NR1
MRF5S9070NR
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FERRITE BEAD 1000 OHM 0805
Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010N
MW6S010NR1
MW6S010GNR1
FERRITE BEAD 1000 OHM 0805
A113
A114
A115
AN1955
C101
JESD22
MW6S010GNR1
CRCW12061001F100
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MRF6S9045MR1
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF6S9045
MRF6S9045NR1/NBR1.
MRF6S9045MR1
MRF6S9045MBR1
A113
A114
A115
AN1955
C101
JESD22
MRF6S9045
MRF6S9045MBR1
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100B2R7CP500X
Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100HR3
MRF5S21100HSR3.
MRF5S21100LR3
MRF5S21100LSR3
100B2R7CP500X
AN1955
MRF5S21100HSR3
MRF5S21100L
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AN1955
Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3
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MRF5S21100H/D
MRF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
AN1955
CDR33BX104AKWS
MRF5S21100HSR3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110
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MRF5S21100H/D
MRF5S21100HR3
MRF5S21100HR3
MRF5S21100HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130H
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Untitled
Abstract: No abstract text available
Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21100H
MRF5S21100HR3
MRF5S21100HSR3
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MW6S010NR1
Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
A114
A115
AN1955
C101
JESD22
MW6S010
MW6S010GMR1
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A114
Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
A114
A115
AN1955
C101
JESD22
MRF6S9130H
MRF6S9130HSR3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. H suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100HR3
MRF5S21100HSR3.
MRF5S21100LR3
MRF5S21100LSR3
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 J-044
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF6S9045N
MRF6S9045NR1
MRF6S9045NBR1
A113
A114
A115
AN1955
C101
JESD22
MRF6S9045N
MRF6S9045NBR1
J-044
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MRF5S9070NR1
Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S9070MR1
MRF5S9070NR1.
MRF5S9070NR1
marking us capacitor pf l1
A113
A114
A115
AN1955
C101
JESD22
crcw12065603f100
MRF5S9070MR1
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FERRITE BEAD 1000 OHM 0805
Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1
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MW6S010
MW6S010NR1/GNR1.
MW6S010MR1
MW6S010GMR1
MW6S010MR1
FERRITE BEAD 1000 OHM 0805
MW6S010NR1
A113
A114
A115
AN1955
C101
JESD22
MW6S010
MW6S010GMR1
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motorola 5118
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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84RF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
motorola 5118
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this
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MRF5S9070NR1/D
MRF5S9070NR1
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MRF5S9070N
Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070N
100B180JP500X
68 uf 400 volt ac capacitor
crcw12065603f100
865 marking amplifier
MRF5S9070NR
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AN1955
Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100LR3
AN1955
CDR33BX104AKWS
MRF5S21100L
MRF5S21100LSR3
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100B2R7CP500X
Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110
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MRF5S21100H
MRF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
100B2R7CP500X
MRF5S21100H
AN1955
C1210C104J5RAC
MRF5S21100HSR3
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