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    Kyocera AVX Components 100B241JT200XT1K

    CAP CER 240PF 200V P90 1111
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    DigiKey 100B241JT200XT1K Reel 7,000 1,000
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    100B241JT200XT1K Cut Tape 938 1
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    Kyocera AVX Components 100B200JT500XT1K

    CAP CER 20PF 500V P90 1111
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    DigiKey 100B200JT500XT1K Cut Tape 6,277 1
    • 1 $5.99
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    100B200JT500XT1K Reel 4,000 1,000
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    Richardson RFPD 100B200JT500XT1K 1,000
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    KOA Speer Electronics Inc RN73R2BTTD5100B25

    RES 510 OHM 0.1% 1/4W 1206
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    DigiKey RN73R2BTTD5100B25 Cut Tape 4,105 1
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    KOA Speer Electronics Inc RN73R1JTTD5100B25

    RES 510 OHM 0.1% 1/10W 0603
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    DigiKey RN73R1JTTD5100B25 Cut Tape 2,688 1
    • 1 $0.21
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    Kyocera AVX Components 100B221JW200XT1K

    CAP CER 220PF 200V P90 1111
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    DigiKey 100B221JW200XT1K Reel 2,500 500
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    100B221JW200XT1K Cut Tape 131 1
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    Mouser Electronics 100B221JW200XT1K 581
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    100B2 Datasheets (121)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B20 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    100B-2002 iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002 Pulse Electronics MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002F iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002FNL iNRCORE MDL DUAL 100D 1:1 SMT TU RPB Original PDF
    100B-2002FNLT iNRCORE MDL DUAL 100D 1:1 SMT TR RPB Original PDF
    100B-2002FT iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002FX iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002FXNL iNRCORE MDL DUAL 100D 1:1 SMT TU RPB Original PDF
    100B-2002FXNLT iNRCORE MDL DUAL 100D 1:1 SMT TR RPB Original PDF
    100B-2002FXT iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NL iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NL Pulse Electronics MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NLT iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NLT Pulse Electronics MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002T iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002T Pulse Electronics MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002X iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002X Pulse Electronics MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002XNL iNRCORE MDL DUAL 100D 1:1 SMT TU RPB Original PDF
    ...

    100B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 100B20F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage2.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)4.0m V(FM) Max.(V) Forward Voltage6.0


    Original     		PDF 100B20F Current100m Time300n Current20u StyleAxial-97

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    150D105 CAPACITOR

    Abstract: 150D823 035A2 020A2 125A2 050A2 006A2 125B2 150D683
    Text: 150D www.vishay.com Vishay Sprague Solid-Electrolyte TANTALEX Capacitors, Hermetically-Sealed, Axial-Lead FEATURES • Terminations: Tin/lead SnPb , 100 % tin (RoHS compliant) • These high performance, hermetically-sealed TANTALEX® capacitors have set the standard


    Original     		PDF M39003/01 CSR13) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 150D105 CAPACITOR 150D823 035A2 020A2 125A2 050A2 006A2 125B2 150D683

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    Untitled

    Abstract: No abstract text available
    Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military/Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350 H OCL with 8mA bias Operating and storage temperature: 100B-2002F: -40°C to +85°C 100B-2002FX: -55°C to +125°C Encapsulated package withstands


    Original     		PDF 10/100BASE-TX 100B-2002F: 100B-2002FX: 1-100MHz 2-30MHz 100B-2002F 100B-2002FX 40MHz 50MHz 1-60MHz

    Untitled

    Abstract: No abstract text available
    Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military / Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350µH OCL with 8mA bias Operating and storage temperature: 100B-2002: -40°C to +85°C 100B-2002X: -55°C to +125°C IC grade transfer-molded package withstands


    Original     		PDF 10/100BASE-TX 100B-2002: 100B-2002X: 100B-2002 100B-2002X

    RM73B2B

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		PDF MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    100B0R5BW

    Abstract: MW4IC2020NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage


    Original     		PDF MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW

    j340 motorola make

    Abstract: MRF21085
    Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085R3 MRF21085LSR3 j340 motorola make

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    rf push pull mosfet power amplifier

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X

    VS100B-12

    Abstract: VS15C-12 P-209 VS30C-5 VS150B VS50B-24 p209
    Text: uutm /k VS-SERIES DENSEI-LAMBDA Single output 10W - 150W Model name VS 100B-24 I Rated Output Voltage Output Wattage Series Name PC Board Type Power Supply • Features C • € marking Low Voltage Directive • Input: 100V A C (85~132V AC) • Single O utput:10W ,15W ,30W ,50W ,75W ,100W ,150W


    OCR Scan     		PDF 100B-24 100VAC -132VAC 175VDC VS10C-VS10QB -10oC~ VS100B VS150B MAW-1205-22 VS100B-12 VS15C-12 P-209 VS30C-5 VS150B VS50B-24 p209

    Untitled

    Abstract: No abstract text available
    Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2900 SD2900 1021498C 1010936C