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    Kyocera AVX Components 100B1R2BP500XTV

    Silicon RF Capacitors / Thin Film 500V 1.2pF Tol 0.1pF Las Mkg Vertical
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    Kyocera AVX Components 100B1R2BP500XC100

    Silicon RF Capacitors / Thin Film 500V 1.2pF Tol 0.1pF Las Mkg
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    Richardson RFPD 100B1R2BP500XC100 100
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    Kyocera AVX Components 100B1R2BP1500XC100

    Silicon RF Capacitors / Thin Film 500V 1.2pF Tol 0.1pF Las Mkg
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    Kyocera AVX Components 100B1R2BP500XT

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    Kyocera AVX Components 100B1R2BP500XT1K

    Silicon RF Capacitors / Thin Film 500V 1.2pF Tol .1pF Las Mkg
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    100B1R2BP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090

    100B2R7CP500X

    Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21090LR3 MRF5S21090LSR3


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090HR3 MRF5S21090HSR3. MRF5S21090LR3 MRF5S21090LSR3 84tion

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    100B2R0BP

    Abstract: MRF5S21090 dbc 4223 MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3
    Text: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090L/D MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 100B2R0BP MRF5S21090 dbc 4223 MRF5S21090LSR3

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 AN1955 CDR33BX104AKWS MRF5S21090H MRF5S21090HSR3 mrf5s21090

    MOTOROLA 381 equivalent

    Abstract: 381 motorola AN1955 MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090LR3 MRF5S21090LSR3 mrf5s21090 Z-15
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21090LR3


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090HR3 MRF5S21090HSR3. MRF5S21090LR3 MRF5S21090LSR3 MHz3-20-1, MOTOROLA 381 equivalent 381 motorola AN1955 MRF5S21090HSR3 mrf5s21090 Z-15

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3

    motorola 5118

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF 84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100LR3 AN1955 CDR33BX104AKWS MRF5S21100L MRF5S21100LSR3

    motorola rf power transistors mtbf

    Abstract: mrf5s21090 RM73B2B
    Text: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LR3 MRF5S21090LSR3 motorola rf power transistors mtbf mrf5s21090 RM73B2B

    ansi-y14.5m-1994

    Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100L MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 ansi-y14.5m-1994 100B2R7CP500X CDR33BX104AKWS MRF5S21100LSR3 motorola 5118

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    RM73B2B

    Abstract: MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 AN1955 mrf5s21090 100B7R5JP
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 RM73B2B MRF5S21090H MRF5S21090HSR3 AN1955 mrf5s21090 100B7R5JP

    MRF5S21090

    Abstract: 100B1R2BP
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090 100B1R2BP

    95F4579

    Abstract: Resistor mttf mrf5s21090
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090HR3 MRF5S21090HSR3 95F4579 Resistor mttf mrf5s21090

    AN1955

    Abstract: MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HSR3


    Original     		PDF MRF5S21090H/D MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 AN1955 MRF5S21090HSR3 mrf5s21090

    AN1955

    Abstract: MRF5S21090LR3 MRF5S21090LSR3 mrf5s21090
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090LR3 AN1955 MRF5S21090LSR3 mrf5s21090

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LR3 MRF5S21100LSR3

    motorola 5118

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3 motorola 5118