APL1001P
Abstract: No abstract text available
Text: D P-Pack G APL1001P S POWER MOS IV 1000V 18.0A 0.60W HERMETIC PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APL1001P UNIT 1000 Volts Drain-Source Voltage
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APL1001P
APL1001P
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5809
Abstract: No abstract text available
Text: APT10025PVR 33A 0.250Ω 1000V POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10025PVR
5809
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1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET
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000-1200V
IXFB30N120P
IXFL30N120P
IXFN30N120P
IXFL32N120P
IXFN32N120P
PluS220
IXFV110N10PS
1200 volt mosfet
1000 volt mosfet
mosfet 300 volt
HiperFET
IXFN38N100
sot 227b diode fast
transistor polar
2R4N120P
IXFN44N100P
IXFB44N100P
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Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT1001R1BN
APT1001R3BN
1001RBN
1001R3BN
150VOLTAGE
APT1001R1/1001R3BN
O-247AD
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443h
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT1001R1HN
APT901R1HN
APT1001R3HN
APT901R3HN
901R1HN
1001R1HN
901R3HN
1001R3HN
LinearPT1001R1/1001R3HN
RGURE11,
443h
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APT901R3BN
Abstract: APT1001R3BN
Text: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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OCR Scan
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APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
/1001R3BN
O-247AD
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APT1002RBNR
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT1002RBNR
APT1002R4BNR
APT1002RBNR
APT1002R4BNR
STD-750
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
1001R1BN
901R3BN
1001R3BN
APT1001R1/901R1/1001R3/901R3BN
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.
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APT1001RBNR
APT1001R1BNR
APT1001RBNR
APT1001R1BNR
APT1001R/1001R1BNR
O-247AD
0001S7T
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PDF
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1004R2BN
Abstract: APT904RBN Apt904r2bn 1004rbn
Text: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN APT1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
1004RBN
904R2BN
1004R2BN
904RBN
/904R/1004R2/904R2BN
10OmS
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210 RBN
Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg
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APT1001RBNR
APT1001R1BNR
O-247AD
210 RBN
1001r1bn
1001RBN
NA 1001
OA 10 diode
APT1001
1001R1BNR
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PDF
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APT1001RBNR
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.
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APT1001RBNR
APT1001R1BNR
APT1001R/1001R1BNR
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
O-247AD
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PDF
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APT1001R1AN
Abstract: APT1001R3AN
Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT1001R1AN
APT901R1
APT1001R3AN
APT901R3AN
901R1AN
1001R1
901R3AN
1001R3AN
O-204AA)
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PDF
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APT*1002R4BN
Abstract: 2T640
Text: A dvanced P ow er Te c h n o lo g y 8 O D O APT1002RBNR APT1002R4BNR s 1000V 7.0A 2.00Q 1000V 6.5A 2.400 3* WER MOS IV'81 UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol VDSS All Ratings: T c = 2 5 °C unless otherwise specified.
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OCR Scan
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APT1002RBNR
APT1002R4BNR
O-247AD
APT*1002R4BN
2T640
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PDF
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APT1001R1HN
Abstract: APT1001R3HN APT901R1HN APT901R3HN
Text: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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02S11
APT1001R1HN
APT901R1HN
APT1001R3HN
APT901R3HN
901r1hn
1001r1hn
901r3hn
1001r3hn
HGURE13,
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PDF
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400v 20 amp mosfet
Abstract: OM6230SS 6 AMP 1000V DIODE lead N CHANNEL MOSFET 10A 1000V OM6227SS OM6228SS OM6232SS OM6233SS TN-1500 MOSFET 1000v 10a
Text: OM6227SS QM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Am p N-Channel, Dual Size 6 High Energy M OSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs
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OM6227SS
OM6230SS
OM6232SS
OM6228SS
OM6231
OM6233SS
MIL-S-19500,
0M6227SS
534-5776FAX
400v 20 amp mosfet
6 AMP 1000V DIODE lead
N CHANNEL MOSFET 10A 1000V
OM6233SS
TN-1500
MOSFET 1000v 10a
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PDF
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Untitled
Abstract: No abstract text available
Text: Prelim inary Data Sheet OM6056SB OM6058SB OM6O6OSB OM6Q57SB OM6Q59SB OM6O6IS B POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE High Current, High Voltage 100V Thru 1000V. Up To 190 Am p N-Channel. Size 7 MOSFETs FEATURES • • • • Size 7 Die, High Energy
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OM6056SB
OM6058SB
OM6Q57SB
OM6Q59SB
OM6057SB
OM6058SB
OM6059SB
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN
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OCR Scan
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APT1001R6BN
1001R6BN
O-247AD
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PDF
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1001RBN
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o l o g y APT1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN
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OCR Scan
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APT1001RBN
1001RBN
APT1001RBN
O-247AD
1001RBN
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PDF
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Untitled
Abstract: No abstract text available
Text: OM6025SC OM6027SC OM6031SC OM6026SC OM6Û28SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V. Up To 26 A m p N-Channel. Size 6 MOSFETs. High En erg y Ca pa bility FEATURES • • • • • • Isolated Hermetic Metal Package
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OCR Scan
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OM6025SC
OM6027SC
OM6031SC
OM6026SC
OM6032SC
O-258AA
MIL-S-19500,
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PDF
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OM6034NM
Abstract: OM6035NM OM6036NM OM6106
Text: OM6034NM OM6036NM OM6Q35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Am p, N-Channel MOSFET In A S urface M ount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
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OCR Scan
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OM6Q35NM
OM6036NM
OM6Q37NM
MIL-S-19500,
300/isec,
534-5776FAX
OM6034NM
OM6035NM
OM6106
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PDF
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Untitled
Abstract: No abstract text available
Text: O A dvanced P o w er Te c h n o lo g y * D O S APT1001R6BN APT901R6BN 1000V 900V 8.0A 1.60Í2 8.0A 1.60Q POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter
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OCR Scan
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APT1001R6BN
APT901R6BN
APT901R68N
O-247AD
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PDF
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APT901RBN
Abstract: ha9002
Text: • T ADVANCED I r J P ow er M Te c h n o lo g y APT1001RBN APT901RBN Hi'vvtK mos 1000V 11.0A 1.00Q 900V 11.0A 1.000 n® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter
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OCR Scan
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APT1001RBN
APT901RBN
APT1001R/901RBN
O-247AD
ha9002
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PDF
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