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    MOSFET N-CH 1000V 10.5A TO247AD
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    APT1001R1BN Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1001R1BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R1BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD Original PDF
    APT1001R1BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    1001RBN

    Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
    Text: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original
    PDF O-247 APT1001R1BN APT1001R3BN 1001RBN 1001R3BN O-247AD 1001RBN 1001R3BN 1001rb

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original
    PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    APT1001R1BNR

    Abstract: 1001R1
    Text: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1

    1001r1bn

    Abstract: 130Q APT1001R3BN diode 1000V
    Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.


    OCR Scan
    PDF APT1001RBNR APT1001R1BNR APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD 0001S7T

    APT1001RBNR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    PDF APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD

    APT901R3BN

    Abstract: APT1001R3BN
    Text: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN /1001R3BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT1001R3BN 1001RBN 1001R3BN 150VOLTAGE APT1001R1/1001R3BN O-247AD

    APT1001R1BN

    Abstract: APT901R1BN 1001R3BN 1001r1bn
    Text: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1 901R3BN 1001R3BN 100mS APT10 1001r1bn

    210 RBN

    Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
    Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg


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    PDF APT1001RBNR APT1001R1BNR O-247AD 210 RBN 1001r1bn 1001RBN NA 1001 OA 10 diode APT1001 1001R1BNR

    APT*1002R4BN

    Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
    Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0


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    PDF O-247 APT1001RBN APT1001R1BN APT1001RBNR APT1001R1BNR APT1001R3BN APT1001R6BN APT1002RBN APT1002R4BN APT1002RBNR APT*1002R4BN APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF

    1001r1bn

    Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR
    Text: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG


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    PDF APT1001RBNR APT1001R-18NR APT1001R1BNR APT1001R/1001R1 O-247AD 1001r1bn APT1001R-18NR