Untitled
Abstract: No abstract text available
Text: CRYDOM PRESENTA I RELÈ STATICI CON USCITE AC E DC E MONTAGGIO SU GUIDA DIN "SeriesOne DR" La tecnologia brevettata da Crydom, relativa alla dissipazione termica ed utilizzata per la nuova linea “SeriesOne DR” offre relè statici compatti da 11 e 18 mm con montaggio su guida DIN e uscite nominali da 6 e 12
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Abstract: No abstract text available
Text: HITANO ENTERPRISE CORP. 1S2 THRU 1S10 TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE -20 to 100Volts CURRENT -1.0 Ampere FETURES * Lo w po we r loss, hi gh eff ici ency * Lo w le aka ge * Lo w f or wa r d vol t a ge * Hig h cu rr ent c ap a bi lit y
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100Volts
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12 VOLT 50 AMP smps schematics
Abstract: circuit for 12 VOLT 6 AMP smps 12 VOLT 16 AMP smps schematics 35 VOLT 3 AMP smps schematics RUBYCON CAPACITOR 12 VOLT 100 AMP smps 12 VOLT 2 AMP smps circuit 600 watt smps schematic 12 VOLT 10 AMP smps controller 12 VOLT 10 AMP smps
Text: AND8031/D Isolated Precision Regulation of a Single 1.8 Volt Output from a Universal Line Input http://onsemi.com Prepared by: Jason Hansen ON Semiconductor APPLICATION NOTE Generic Off–Line Conversion Circuit INTRODUCTION To reduce the total number of components and thus
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AND8031/D
MC33363B
r14525
12 VOLT 50 AMP smps schematics
circuit for 12 VOLT 6 AMP smps
12 VOLT 16 AMP smps schematics
35 VOLT 3 AMP smps schematics
RUBYCON CAPACITOR
12 VOLT 100 AMP smps
12 VOLT 2 AMP smps circuit
600 watt smps schematic
12 VOLT 10 AMP smps controller
12 VOLT 10 AMP smps
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Untitled
Abstract: No abstract text available
Text: Back to FETs Technical Data NSF20606 POWER MOSFET N CHANNEL 10.5 AMPERE 600 VOLTS 0.60 Ω • REPETITIVE AVALANCHE RATINGS • LOW RDS ON • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING TO-254 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted)
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NSF20606
O-254
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM6335SGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 20 Volts CURRENT 1.2 Ampere APPLICATION * * * * * * * Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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CHM6335SGP
SC-88/SOT-363
SC-88/SOT-363)
SC-88/SOT-ance
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CHM6561QGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM6561QGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 30 Volts CURRENT 2.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. SC-74/SOT-457
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CHM6561QGP
SC-74/SOT-457
SC-74/SOT-457)
CHM6561QGP
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MTM55N10
Abstract: No abstract text available
Text: fy«_/ ^smi-donauctoi LProducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM55N10 MTM60N06 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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MTM55N10
MTM60N06
100-C
MTM55N10
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2N7002SESGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002SESGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 Ampere APPLICATION * Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems.
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2N7002SESGP
SC-88/SOT-363
SC-88/SOT-363)
2N7002SESGP
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DIODO LED
Abstract: SSR 80 DA 3205 FET dissipator rele 12AWG BH17 RS-443 schemi schemi diodo di protezione
Text: Relè statici a canale ale singolo Relè statici a canale doppio SeriesOne DR L'ESPERTO MONDIALE NELLA TECNOLOGIA DEI RELÈ STATICI CHI SIAMO Crydom, unità operativa di Custom Sensors and Technologies CST e leader mondiale nelle tecnologie a stato solido, eccelle nella
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te94-46
DIODO LED
SSR 80 DA
3205 FET
dissipator
rele
12AWG
BH17
RS-443
schemi
schemi diodo di protezione
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MTD20P06HDL
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview HDTMOST~EEFETTM High Density Power FET P-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and mmmutation modes. The new energy efficient design also offers a drain-to-source diode
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MTD20P06HDL
MTD20P06HDL
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AQI-657
Abstract: C02551 MPF960 IN40P MPF930 MPF990 10m50c
Text: 1 Advance Information I 2.0 AMPERE N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed speed power switching applications plies, CMOS logic, microprocessor for high-current, such as switching high- power or TTL to high current
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MPF930
MPF960
MPF990
C02551
AQI-657
C02551
MPF960
IN40P
MPF930
MPF990
10m50c
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2535CT
Abstract: 2545CT
Text: MBR2535CT-MBR2560CT 25 Ampere Schottky Barrier Rectifiers • Low power loss, high efficiency. • High surge capability. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction.
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MBR2535CT-MBR2560CT
O-220AB
2535CT
2545CT
2550CT
2560CT
2535CT
2545CT
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Untitled
Abstract: No abstract text available
Text: MBR2535CT - MBR2560CT 25 Ampere Schottky Barrier Rectifiers Features • • • Low power loss, high efficiency. High surge capability. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction.
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MBR2535CT
MBR2560CT
O-220AB
2535CT
2545CT
2550CT
2560CT
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Untitled
Abstract: No abstract text available
Text: MBR2535CT - MBR2560CT 25 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capability. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction.
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MBR2535CT
MBR2560CT
O-220AB
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55N10
Abstract: transistor 60n06 MTM55N08 MTM60N05 60N06 60N05 55N08 55N08/M
Text: MOTOROLA SEMICONDUCTOR MTM55N08 MTM55N10 MTM60N05 MTM60N06 TECHNICAL DATA D i'signtM -’s D a t a 55 and 60 AMPERE N-CHAIMNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on = 0 04 0HM 80 and 100 VOLTS These TM OS Power FETs are designed for low voltage, high
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MTM55N08
MTM55N10
MTM60N05
MTM60N06
60N05·
55N10
transistor 60n06
60N06
60N05
55N08
55N08/M
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5N05
Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
Text: <8> MTP4N08, MTP5N05 MTP4N10, MTP5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high
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MTP4N08,
MTP5N05
MTP4N10,
MTP5N06
5N05
5n06
MTP5N06
MTP4N08
MTP4N10
5n0506
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KR324515
Abstract: pm300hha120 300 volt 5 ampere transistor 200 Ampere transistor 200 Ampere power transistor CM100DY-24H PM300hH
Text: Power Tranalstor Module Numbering System Powtnx, Ine., 300 m m Str— t, Youngwood, ftw w yfHMHa Um 7-1t00 413 MO-7273 P ow n x, Europe, S.A. 438Aw nu• Q. Duranti, BP107, 73009 L* Mam, tou x» (43) 41.14.14 Digit 1: Digit 3: J - FETM OD M OSFET Modules
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7-1t00
MO-7273
438Aw
BP107,
CM100DY-24H
PM300HHA120
KR324515
300 volt 5 ampere transistor
200 Ampere transistor
200 Ampere power transistor
PM300hH
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JD225005
Abstract: transistor c 3927 JD224505 ZD 103 ma BP107 vdo x10 VQS-15V
Text: P Ol i l E RE X m m 3=1E D INC a t M 7STMtiSl GG0MS12 S IPRX JD224505 JD2250Q5 K Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual FETMOD
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G0DM51E
JD224505
JD2250Q5
BP107,
Amperes/450-500
JD224505,
JD225005
JD225005
Amperes/450/500
transistor c 3927
ZD 103 ma
BP107
vdo x10
VQS-15V
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Untitled
Abstract: No abstract text available
Text: Back to FETs NSG2563 ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced
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NSG2563
O-254Z
NSG2563
300jisec,
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Untitled
Abstract: No abstract text available
Text: Back to FETs NESM250 NESM250Z POWER MOSFET N CHANNEL • 27 AMPERE REPETITIVE AVALANCHE RATINGS 200 VOLTS Tff LOW RDS on LOW DRIVE REQUIREMENT 0.085 Q TO-254Z DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted)
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NESM250
NESM250Z
O-254Z
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Untitled
Abstract: No abstract text available
Text: POWEREX INC m V Tö E R E j>T| 72T4L.51 OQOaSbb 4 |~' l_ Pow erex, In c ., W ills S treet, Youngw ood, Pennsylvania 15697 412 9 25-7272 JT22Q5Ï0 Tentative Split-Dual FETMOD Power Module 100 Amperes/50 Volts Description Powerex Split-Duai FETMOD'“ Power
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72T4L
JT22Q5
Amperes/50
JT220510
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JT220510
Abstract: No abstract text available
Text: POUEREX INC m Ta D T | 7 2 T 4 b 5 1 ODDaSbb 4 |" N E R E X _ Powerex, Inc., Hlllìs Street, Youngwood, Pennsylvania 15697 412 925-7272 JT220510 Tentatìve Split-Dual FETMOD Power Module 100 Amperes/50 Volts Description Powerex Split-Duai FETMOD'“ Power
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JT220510
Amperes/50
JT220510
19tions
JT2M51Q
300/is,
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Untitled
Abstract: No abstract text available
Text: 729462 1 POWEREX INC '98D 0 2 5 1 6 " d ~ JS0225A1 JS0230A1 CEA ^ - ~~ tentative Single FETMOD PowerModufes ' Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 T6 de| 72T4tEi o°°5sil, □ | W T 15 Amperes/250-300 Volts Dlmenilon
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JS0225A1
JS0230A1
Amperes/250-300
300/ts,
JS0225A1/JS0230A1
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Untitled
Abstract: No abstract text available
Text: POW EREX 3RE IN C D • 72^41=21 000MSM2 □ BPRX WNBŒX JEF24501 JEF25001 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 41 2 925-7272 Six-Mos FETMOD P o w e r M odules Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (4 3 )4 1 .1 4 .1 4
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000MSM2
BP107,
JEF24501
JEF25001
Amperes/450-500
JEF24501,
peres/450-500
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