10-04 MOTOROLA TRANSISTOR Search Results

10-04 MOTOROLA TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

10-04 MOTOROLA TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC547 sot package sot-23 Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
MMBF4856 Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
J293 Abstract: erie ceramic J324 s1238 Text: MOTOROLA Order this document by MRF4427/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Low Power Transistor MRF4427R2 Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for	Original	PDF	MRF4427/D MRF4427R2 MRF3866 MRF4427R2 MRF4427/D J293 erie ceramic J324 s1238
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF18060B/D GSM1930 MRF18060B MRF18060BS MRF18060B/D
motorola rf Power Transistor obsolete Abstract: MRF18060A Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF18060A/D GSM1805 MRF18060A MRF18060AS MRF18060A/D motorola rf Power Transistor obsolete
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 53– and 60–Channel Performance	Original	PDF	MHW5382A/D MHW5382A MHW5382A/D
smd transistor 927 Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts MRF18060A Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF18060A/D GSM1805 MRF18060A MRF18060AS MRF18060A/D smd transistor 927 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
T17 motorola Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF19060/D MRF19060 MRF19060S MRF19060/D T17 motorola
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA MRF187 MRF187S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these	Original	PDF	MRF187/D MRF187 MRF187S DEVICEMRF187/D
MRF18060 Abstract: BC847 GSM1900 GSM1930 LP2951 MRF18060B MRF18060BS RF Power Transistor MRF18060B MRF18060 Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF18060B/D MRF18060B MRF18060BS GSM1930 MRF18060B MRF18060 BC847 GSM1900 GSM1930 LP2951 MRF18060BS RF Power Transistor MRF18060B MRF18060
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF21060/D MRF21060 MRF21060S MRF21060/D
SMD Transistor z6 Abstract: MRF18060A BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF18060A/D MRF18060A MRF18060AS GSM1805 MRF18060A SMD Transistor z6 BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin
XRF286 Abstract: XRF286S MRF286 MOTOROLA XRF286 47nj capacitor MRF286S MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS Text: MOTOROLA Order this document from WISD RF Marketing SEMICONDUCTOR TECHNICAL DATA MRF286 MRF286S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE	Original	PDF	MRF286 MRF286S XRF286 MRF286 MRF286, MRF286S XRF286S MOTOROLA XRF286 47nj capacitor MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS

MRF187 Abstract: CDR33BX104AKWS MRF187S M 8951 Z5C20 Text: MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 85 W, 1.0 GHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–04, STYLE 1 MRF187 CASE 465A–04, STYLE 1	Original	PDF	MRF187/D MRF187) MRF187S) MRF187 CDR33BX104AKWS MRF187S M 8951 Z5C20
400S Abstract: MRF18030B MRF18030BR3 MRF18030BSR3 Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3
IRL 724 N Abstract: IRL 724 Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030BR3 RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BSR3 Designed for GSM and EDGE base station applications with frequencies	Original	PDF	MRF18030B/D MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3 MRF18030BLSR3 MRF18030B/D IRL 724 N IRL 724
MRF9080 Abstract: MRF9080S 08053G105ZATEA Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	PDF	MRF9080/D MRF9080 MRF9080S MRF9080 MRF9080S 08053G105ZATEA
MRF18030ALSR3 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies	Original	PDF	MRF18030A/D MRF18030AR3 MRF18030ALR3 MRF18030ASR3 MRF18030ALSR3 MRF18030ALSR3 MRF18030A/D
10N25 Abstract: No abstract text available Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES	OCR Scan	PDF	MTM10N25 MTP10N25 0J570 19XACE 30i0012 TQ-204AA 21A-04 O-220AB 10N25
npn darlington motorola to92 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor NPN Silicon COLLECTOR 3 EMITTER 1 CASE 29-04, STYLE 1 TO-92 TO—226AA MAXIM UM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol MPSA27 Unit VCES 60 Vdc Vdc vebo 10 Collector Current — Continuous	OCR Scan	PDF	226AA) MPSA27 npn darlington motorola to92
Motorola transistors M 724 Abstract: SD6150 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode M SD6150 3 Anode CASE 29-04, STYLE 4 T O -92 TO-226AA Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 usee)	OCR Scan	PDF	SD6150 O-226AA) Re100 b3b72SS Motorola transistors M 724 SD6150
2n3300 Abstract: 2N3302 2N2218 2N3300 MOTOROLA Text: MOTOROLA SC XSTR S/R F 15E D b3b7354 Q0âb350 4 \| T 'X l-o i 2N3300 CASE 79-04, STYLE 1 TO-39 TO-205AD) 3 Collector M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage (Applicable 0 to 10 mAdc) VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc	OCR Scan	PDF	b3b7354 2N3300 O-205AD) 2N3300 2N3302 O-206AA) 2N2218 2N3302 2N3300 MOTOROLA
bc517 Abstract: BC517S Text: MOTOROLA SC XSTRS/R 12E D I F b3 b? 254 GGñ5ñtil BC517, S CASE 29-04, STYLE 17 TO-92 TO-226AA MAXIMUM RATINGS R a tin g Sym bol BC517 U n it VCES 30 Vdc C ollector-B ase V oltage VCB 40 Vdc E m itter-B ase Voltage V eb 10 Vdc C ollector C urren t - Continuous	OCR Scan	PDF	BC517, BC517 O-226AA) BC517S

10-04 MOTOROLA TRANSISTOR Search Results

10-04 MOTOROLA TRANSISTOR Result Highlights (5)

10-04 MOTOROLA TRANSISTOR Datasheets Context Search

BC547 sot package sot-23

MMBF4856

BC337 BC547

J293

Untitled

motorola rf Power Transistor obsolete

Untitled

smd transistor 927

T17 motorola

Untitled

MRF18060

Untitled

SMD Transistor z6

XRF286

MRF187

400S

IRL 724 N

MRF9080

MRF18030ALSR3

10N25

npn darlington motorola to92

Motorola transistors M 724

2n3300

bc517