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    10 AMP NPN DARLINGTON POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Search Results

    10 AMP NPN DARLINGTON POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR1HF50B Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    10 AMP NPN DARLINGTON POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80 amp 30v npn darlington

    Abstract: 2N6388 npn darlington transistor darlington power transistor 10a
    Text: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		PDF 2N6388 O-220 80 amp 30v npn darlington 2N6388 npn darlington transistor darlington power transistor 10a

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


    Original     		PDF BDW42* BDW46, BDW47* BDW46 BDW42/BDW47 O-220AB BDW42 BDW47

    8723 transistor

    Abstract: potentiometer MOD 534 Widlar Q88-R82 Complementary Darlington Audio Power Amplifier darlington cascode second stage Exceed Perseverance Electronic Industry C1995 LM108 TP-14
    Text: Low Voltage Techniques Low Voltage Techniques National Semiconductor Technical Paper 14 December 1978 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Abstract A micropower operational amplifier is described that will operate from a total supply voltage of 1 1V The


    Original     		PDF LM108 8723 transistor potentiometer MOD 534 Widlar Q88-R82 Complementary Darlington Audio Power Amplifier darlington cascode second stage Exceed Perseverance Electronic Industry C1995 TP-14

    TIPI42

    Abstract: TIP1411 TIP142 TIP147 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIPI47
    Text: ÆàMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCeo sus = 60 V (Min) - TIP140.TIP145 = 80 V (Min) - TIP141.TIP146


    OCR Scan     		PDF TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 TIP145 TIP146 TIPI42 TIP1411 TIP142 TIP147 TIP147 TIPI47

    100 amp npn darlington power transistors

    Abstract: PMD19D100 PMD19D80 60 amp npn darlington power transistors PMD18D PMD18D100 PMD18D80
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD 18D, 19D SERIES 300 WATT 50 AMP CONTINUOUS, 100 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage PM D18D, PM D 19D 80 P M D 1 8 D , P M D 1 9D 10 0 FEATURES • Electrical specifications guaranteed for


    OCR Scan     		PDF

    17K100

    Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


    OCR Scan     		PDF PMD16K, 17K100 lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K

    BOX54B

    Abstract: pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp BDX54B NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors _ BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ Iq = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 1 0 0 mAdc


    OCR Scan     		PDF BDX53B, BDX53C, O-220AB BDX53B BDX53C BDX54B BDX54C BDX54B BDX53C BOX54B pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223

    BDW94

    Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C bdw93c applications
    Text: Ü& MOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDW93 BDW93A BDW93B BDW93C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCEO sus = 45 V (Min) - BDW93.BDW94


    OCR Scan     		PDF BDW93 BDW94 BDW93A, BDW94A BDW93B BDW94B BDW93C BDW94C BDW94 BDW93A BDW94A BDW94B BDW94C bdw93c applications

    bipolar power transistor

    Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:


    OCR Scan     		PDF BDW46 BDW42/BDW47 O-220AB BDW46 BDW42 BDW47 bipolar power transistor motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40

    bdx340

    Abstract: BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX33B BDX34B BDX34C NPN bipolar junction transistors max hfe 2000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Com plem entary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B • High DC Current Gain — hFE = 2500 typ. at Iq = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc


    OCR Scan     		PDF BDX33B, BDX33C, 33C/34B, O-220AB BDX33B BDX33C" BDX34B BDX34C bdx340 BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX34C NPN bipolar junction transistors max hfe 2000

    2N6284

    Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage


    OCR Scan     		PDF 2N6283, 2N6284, 2N6286, 2N6287 2N6286 2N6284 2N6283 2N6286 2N6287 16 amp npn darlington power transistors

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


    OCR Scan     		PDF 2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn

    2N6301 applications

    Abstract: 2N6300 2N6298 2N6299 2N6301
    Text: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS General-purpose power amplifier and low frequency switching applications Boca Semiconductor Corp FEATURES: RSr * Low Collector-Emitter Saturation Voltage v c e <s a t t 2 0V M ax @ lc= 4 0 A http://www.bocasemi.com


    OCR Scan     		PDF 2N6298 2N6300 2N6299 2N6301 2N6300 2N6301 2N6301 applications

    2N6053

    Abstract: 2N6055 2N6054 2N6056
    Text: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A


    OCR Scan     		PDF 2N6053 2N6055 N6054 2N6056 2N6055 2N6054 2N6056 2N6054,

    BDV66

    Abstract: BDV67 BDV66A BDV66B BDV67A BDV67B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
    Text: ÆAm o s p e c DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV66A BDV67A FEATURES: * Collector-Emitter Sustaining VoltageVCEo sus, = 6 0 V (Min - BDV66.BDV67 = 80 V (Min) - BDV66A.BDV67A = 100 V (Min) - BDV66B.BDV67B * Collector-Emitter Saturation Voltage


    OCR Scan     		PDF BDV66 BDV67 BDV66A BDV67A BDV66B BDV67B BDV67 BDV67A BDV67B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON

    pmd10K80

    Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
    Text: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB


    OCR Scan     		PDF PMD10K, pmd10K80 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K

    pnp 3223

    Abstract: BDX63 TRANSISTOR C 3223 Motorola Bipolar Power Transistor Data BDX53C MOTOROLA DX53
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hpE = 2500 Typ @ lc = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc


    OCR Scan     		PDF BDX53B, BDX53C, O-220AB BDX54C BDX53C BDX54B, -55flCto25 pnp 3223 BDX63 TRANSISTOR C 3223 Motorola Bipolar Power Transistor Data BDX53C MOTOROLA DX53

    PMD19K100

    Abstract: PMD18K100 PMD18K PMD18K80 PMD19K80 100 amp npn darlington power transistors 60 amp npn darlington power transistors 19K80
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD18K, 19K SERIES 240 WATT 30 AMP CONTINUOUS, 60 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER C o lle c to r E m itte r V oltage SYMBOL MAXIMUM Vdc P M D 1 8K , 19K80 80 P M D 1 8 K , 19K100 C o lle c to r B a s e V o lta ge


    OCR Scan     		PDF PMD18K, PMD19K100 PMD18K100 PMD18K PMD18K80 PMD19K80 100 amp npn darlington power transistors 60 amp npn darlington power transistors 19K80

    TIPI22

    Abstract: TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note TIP120 TIP122
    Text: ÆfcMOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP120 TIP121 TIP122 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - TIP120.TIP125


    OCR Scan     		PDF TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP121 TIPI22 TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note