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    10 AMP NPN DARLINGTON POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Search Results

    10 AMP NPN DARLINGTON POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR1HF50B Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    10 AMP NPN DARLINGTON POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pin diagram of ic 4066

    Abstract: 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage TIP110 TIP115 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors 5 amp npn darlington power transistors
    Text: TIP110, TIP115 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP110, TIP115. • Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A.


    Original     		TIP110, TIP115 TIP115. pin diagram of ic 4066 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage TIP110 TIP115 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors 5 amp npn darlington power transistors PDF

    80 amp 30v npn darlington

    Abstract: 2N6388 npn darlington transistor darlington power transistor 10a
    Text: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		2N6388 O-220 80 amp 30v npn darlington 2N6388 npn darlington transistor darlington power transistor 10a PDF

    80 amp 80v npn darlington

    Abstract: 9016 transistor 2N6388
    Text: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		2N6388 80 amp 80v npn darlington 9016 transistor 2N6388 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    TIPI42

    Abstract: TIP1411 TIP142 TIP147 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIPI47
    Text: ÆàMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCeo sus = 60 V (Min) - TIP140.TIP145 = 80 V (Min) - TIP141.TIP146


    OCR Scan     		TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 TIP145 TIP146 TIPI42 TIP1411 TIP142 TIP147 TIP147 TIPI47 PDF

    100 amp npn darlington power transistors

    Abstract: PMD19D100 PMD19D80 60 amp npn darlington power transistors PMD18D PMD18D100 PMD18D80
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD 18D, 19D SERIES 300 WATT 50 AMP CONTINUOUS, 100 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage PM D18D, PM D 19D 80 P M D 1 8 D , P M D 1 9D 10 0 FEATURES • Electrical specifications guaranteed for


    OCR Scan     		PDF

    17K100

    Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


    OCR Scan     		PMD16K, 17K100 lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K PDF

    13k80

    Abstract: No abstract text available
    Text: SEUTECH CORP SflE D 0 1 3 * 1 ] . 3*1 100 WATT 8 AMP CONTINUOUS, 16 AMP PEAK 00032bS ISET Ö7D PMD 12K, 13K ABSOLUTE MAXIMUM RATINGS SYM BO L PARAMETER FEATURES Collector Emitter Voltage PM D12K, 13K80 PM D12K, 13K100 VcEO Collector Base Voltage PM D12K, 13KB0


    OCR Scan     		00032bS 13K80 13K100 13KB0 perfo10 0GD32bb PDF

    80 amp 80v npn darlington

    Abstract: 10 amp npn darlington power transistors with low saturation voltage
    Text: SEMTECH CORP S ñE D • Û I B T I B 11! 00032Sti 577 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD10K, 11K80 PMD10K, 11K100 V ceO Collector Base Voltage PMD10K, 11K80 PMD10K, 11K100 V c 80


    OCR Scan     		00032Sti PMD10K, 11K80 11K100 DGD32tjO 80 amp 80v npn darlington 10 amp npn darlington power transistors with low saturation voltage PDF

    BOX54B

    Abstract: pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp BDX54B NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors _ BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ Iq = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 1 0 0 mAdc


    OCR Scan     		BDX53B, BDX53C, O-220AB BDX53B BDX53C BDX54B BDX54C BDX54B BDX53C BOX54B pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223 PDF

    bipolar power transistor

    Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:


    OCR Scan     		BDW46 BDW42/BDW47 O-220AB BDW46 BDW42 BDW47 bipolar power transistor motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40 PDF

    BOX53C

    Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
    Text: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54


    OCR Scan     		BDX53 BDX54 BDX53A, BDX54A BDX53B BDX54B BDX53C, BDX54C BOX53C BOX53 box54 BDX54 BDX53A BDX53C BDX54A BDX54B PDF

    bdx340

    Abstract: BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX33B BDX34B BDX34C NPN bipolar junction transistors max hfe 2000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Com plem entary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B • High DC Current Gain — hFE = 2500 typ. at Iq = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc


    OCR Scan     		BDX33B, BDX33C, 33C/34B, O-220AB BDX33B BDX33C" BDX34B BDX34C bdx340 BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX34C NPN bipolar junction transistors max hfe 2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E MTECH CORP 013^13^ 0003E74 SIB 5flE D 240 WATT 30 AMP CONTINUOUS, 60 AM P PEAK SET PMD 18K, 19K ABSOLUTE MAXIMUM RATINGS PARAM ETER FEATURES SYM BO L Collector Emitter Voltage PM D18K, 19K80 PMD18K, 19K100 VcE o Collector Base Voltage PM D18K, 19K80


    OCR Scan     		0003E74 19K80 PMD18K, 19K100 00D327C PDF

    2N6284

    Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage


    OCR Scan     		2N6283, 2N6284, 2N6286, 2N6287 2N6286 2N6284 2N6283 2N6286 2N6287 16 amp npn darlington power transistors PDF

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


    OCR Scan     		2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn PDF

    2N6301 applications

    Abstract: 2N6300 2N6298 2N6299 2N6301
    Text: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS General-purpose power amplifier and low frequency switching applications Boca Semiconductor Corp FEATURES: RSr * Low Collector-Emitter Saturation Voltage v c e <s a t t 2 0V M ax @ lc= 4 0 A http://www.bocasemi.com


    OCR Scan     		2N6298 2N6300 2N6299 2N6301 2N6300 2N6301 2N6301 applications PDF

    2N6053

    Abstract: 2N6055 2N6054 2N6056
    Text: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A


    OCR Scan     		2N6053 2N6055 N6054 2N6056 2N6055 2N6054 2N6056 2N6054, PDF

    2N6284

    Abstract: 2N6283 2N62B
    Text: SEMTECH CORP SñE J> m 013^13^ 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK 0003310 353 SE T 2N6283, 2N6284, 2N6286 2N6287 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2 N 6 2 84 , 2 N 6 2 8 7 100 Vdc VcBO 2 N 6 2 8 3 , 2 N 6 2 86


    OCR Scan     		2N6283, 2N6284, 2N6286 2N6284) 2N6286, 2N6287) 2N6284 2N6283 2N62B PDF

    BDV66

    Abstract: BDV67 BDV66A BDV66B BDV67A BDV67B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
    Text: ÆAm o s p e c DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV66A BDV67A FEATURES: * Collector-Emitter Sustaining VoltageVCEo sus, = 6 0 V (Min - BDV66.BDV67 = 80 V (Min) - BDV66A.BDV67A = 100 V (Min) - BDV66B.BDV67B * Collector-Emitter Saturation Voltage


    OCR Scan     		BDV66 BDV67 BDV66A BDV67A BDV66B BDV67B BDV67 BDV67A BDV67B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON PDF