1 MBH 50 D 100 Search Results

1 MBH 50 D 100 Result Highlights (5)

Part	Manufacturer	Description
DBL5W5P543A40LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.
DEV2V2P543H40LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness.
DEO2V2P543M30LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets.

1 MBH 50 D 100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AVE mbH Digitally Controlled Line Array Ascolto A.V.E. mbH Audio Vertriebs-Entwicklungsgesellschaft Germany Digitally Controlled Line Array A s c o l t o ® - LH3225 Datasheet Digitally Controlled Line Array Ascolto® LH3225 Datasheet A.V.E. mbH - Germany	Original	LH3225 LH3225	PDF
transistor D 2395 Abstract: BLV45/12 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLV45/12 OT-119) transistor D 2395 BLV45/12	PDF
Philips 4312 020 Abstract: blv75 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLV75/12 OT-119) Philips 4312 020 blv75	PDF
mda324 Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327	PDF
thermometer Abstract: DIN EN 60751 14571 Text: PräzisionsWiderstands thermometer electrotherm Pt 100 Ausgabe 04/99 Einsatzgebiete - Temperaturmessung mit Meßgenauigkeit bis zu 0.02 K - als Arbeitsnormal für den Temperaturbereich -80.200°C empfohlen Technische Daten: - Einsatz sorgfältig vorgealterter und selektierter	OCR Scan	XII/98 797553u thermometer DIN EN 60751 14571	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • \| BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero	OCR Scan	bbS3T31^ DQ113T1 BYV43_ T-03-19 BYV43-40A, DD114D5 BYV43SERIES M1246 BYV43	PDF
BYV39 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE TOD D bb53T31 OOlObSO 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are	OCR Scan	bb53T31 BYV39 O-220 BYV39-40A;	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DL.E D • ^ 5 3 ^ 3 1 0011351 7 ■ BYV33 SERIES _ J y T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward	OCR Scan	BYV33 T-03-19 bbS3T31 bb53T31 D0113ST	PDF
T63N Abstract: philips dl 711 Text: 11 N AMER P H IL IP S /D IS C R E T E Q tE D PHS1401 SERIES fc>b53T31 Q D l l b T S E • t - 03-n ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft	OCR Scan	PHS1401 b53T31 PHS1401, PHS1402, PHS1403, PHS1404. PHS1401 T63N philips dl 711	PDF
BYV22 Abstract: No abstract text available Text: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are	OCR Scan	bb53T31 BYV22 BYV22â btiS3T31 00105T1	PDF
M03A Abstract: No abstract text available Text: -I—1_ QbE D ^MIER^PHXLIPS/discrete LbS m B l O Q in a i 7 C122 SERIES r - 2 S T - l S' THYRISTORS The C l22 series devices are glass-passivated thyristors featuring alloy-bonding, thus being particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching.	OCR Scan	C122F M03A	PDF
Untitled Abstract: No abstract text available Text: 25E D N AUER PHI LIP S/DISCRETE • 1^53=131 0023573 3 ■ BYV34 SERIES T 1 0 3 - /9 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for	OCR Scan	BYV34 Q025Sfll bbS3131 0Q525fl2 T-03-19	PDF
BYQ28 Abstract: No abstract text available Text: N A ME R PHILIPS/DISCRETE 2 SE D • 1^53=131 0 0 2 2 3 T 5 _ _ S ■ BYQ28 SERIES A 7 - 0 3 -1 7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward	OCR Scan	BYQ28 operati1-03-17 bbS3T31 0DEEM03 D0EE404	PDF
Untitled Abstract: No abstract text available Text: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in	OCR Scan	PBYR1635 PBYR1640 PBYR1645 b5313 PRYR1fi45 bbS3T31 T-03-17 M3192	PDF

Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 2SE D ^53*131 0 0 2 2 5 6 3 b • A BYV42 S E R IE S T -O Z - ^ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r	OCR Scan	BYV42 Q022STO T-03-19 bbS3T31 00225T1	PDF
Untitled Abstract: No abstract text available Text: PBYR2535CT PBYR2540CT PBYR2545CT B S E D B tjbS 3 T31 0033^77 S B N AMER PHILIPS/DISCRETE SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES 7^ <33-/9 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in switched-mode	OCR Scan	PBYR2535CT PBYR2540CT PBYR2545CT T-03-19 bbS3T31	PDF
M3335 Abstract: 6075A BYP20 1 MBH 50 D 100 Text: SbE T> TllOflSb ODMllbS 533 IPHIN BYP20 SERIES nHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE 7 - 0 3 - I 7 Glass-passivated, high-efficiency epitaxial rectifie r diodes in plastic envelopes, featuring low reverse	OCR Scan	BYP20 M1246 M3335 6075A 1 MBH 50 D 100	PDF
Untitled Abstract: No abstract text available Text: . N AflER PHIL IPS /DI SCRE TE 2SE D ! , LLS3T31 0032415 7 • DEVELOPMENT DATA BYR28 SERIES This data sheet contains advance information and specifications are subject to change without notice. , [ T -G Z -iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward	OCR Scan	LLS3T31 BYR28 002242H	PDF
Untitled Abstract: No abstract text available Text: “ N AMER PHILIPS/DISCRETE 2SE D ' ~ II 1.^53*131 0022553 fl • d y VSd SERIES 7 ~ -n 3 -l<c ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended for	OCR Scan	BYV32 bS3T31 0033StiD S3T31 Q022Sbl BYV32 T-03-19	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D t,hS3T31 0011443 1 BYV73 SERIES s~ T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES 1 High-efficiency schottky-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero	OCR Scan	hS3T31 BYV73 T-03-19 BYV73â bbS3T31 BYV73SERIE3	PDF
Untitled Abstract: No abstract text available Text: '- N AMER PHILIPS/DISCRETE 5SE D • 11 bb53=131 003271=] 5 ■ BYV143 SERIES ,[ 7 ? 0 3 -f t SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and	OCR Scan	BYV143 T03-79 T-03-19	PDF
Untitled Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE 2SE D PBYR2035CT PBYR2040CT PBYR2045CT bb53*131 0022TL.7 2 M □ SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in	OCR Scan	PBYR2035CT PBYR2040CT PBYR2045CT 0022TL QU-19 S3T31	PDF
MRC106 Abstract: LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057 Text: Philips Semiconductors • 711D6gb 0 D b 3 m b ' PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain T7b M P H I N Product specification bSE D BLV945A QUICK REFERENCE DATA RF performance at Th = 25 °C In a common emitter class-AB push-pull test	OCR Scan	BLV945A OT324 MRC107 MRC106 LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,	OCR Scan	aaaa343 O-220 BY359â bbS3131 T-03-17 BY359	PDF

1 MBH 50 D 100 Search Results

1 MBH 50 D 100 Result Highlights (5)

1 MBH 50 D 100 Datasheets Context Search

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transistor D 2395

Philips 4312 020

mda324

thermometer

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BYV39

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T63N

BYV22

M03A

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BYQ28

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M3335

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MRC106

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