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    1 MBH 50 D 100 Search Results

    1 MBH 50 D 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions

    1 MBH 50 D 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AVE mbH Digitally Controlled Line Array Ascolto A.V.E. mbH Audio Vertriebs-Entwicklungsgesellschaft Germany Digitally Controlled Line Array A s c o l t o ® - LH3225 Datasheet Digitally Controlled Line Array Ascolto® LH3225 Datasheet A.V.E. mbH - Germany


    Original     		PDF LH3225 LH3225

    transistor D 2395

    Abstract: BLV45/12
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLV45/12 OT-119) transistor D 2395 BLV45/12

    BLF245

    Abstract: SOT123 SOT123 Package MGP175
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control


    Original     		PDF BLF245 MBB072 OT123 BLF245 SOT123 SOT123 Package MGP175

    Philips 4312 020

    Abstract: blv75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLV75/12 OT-119) Philips 4312 020 blv75

    SOT123 Package

    Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain


    Original     		PDF BLF145 SC08a OT123 SOT123 Package enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table

    enamelled copper wire tables

    Abstract: BLF145 J146 J-146
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage


    Original     		PDF BLF145 OT123 MBB072 enamelled copper wire tables BLF145 J146 J-146

    BLF244

    Abstract: MGP160
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control


    Original     		PDF BLF244 MBB072 OT123 BLF244 MGP160

    thermometer

    Abstract: DIN EN 60751 14571
    Text: PräzisionsWiderstands­ thermometer electrotherm Pt 100 Ausgabe 04/99 Einsatzgebiete - Temperaturmessung mit Meßgenauigkeit bis zu 0.02 K - als Arbeitsnormal für den Temperaturbereich -80.200°C empfohlen Technische Daten: - Einsatz sorgfältig vorgealterter und selektierter


    OCR Scan     		PDF XII/98 797553u thermometer DIN EN 60751 14571

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero


    OCR Scan     		PDF bbS3T31^ DQ113T1 BYV43_ T-03-19 BYV43-40A, DD114D5 BYV43SERIES M1246 BYV43

    BYV39-35

    Abstract: BYV39-40A m1727 BYV39 M0026 M1729 BYV39-30 t03n
    Text: N AMER PHILIPS/DISCRETE TOD D bbSBTBl DGlüb2D 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES Hlgh-efficiency schottky-barrier rectifier diodes in T0-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are


    OCR Scan     		PDF bb53131 BYV39 T0-220 BYV39-40A; BYV39â M1246 M81-1555/9 M1729 BYV39-35 BYV39-40A m1727 M0026 M1729 BYV39-30 t03n

    BYV39

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE TOD D bb53T31 OOlObSO 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are


    OCR Scan     		PDF bb53T31 BYV39 O-220 BYV39-40A;

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DL.E D • ^ 5 3 ^ 3 1 0011351 7 ■ BYV33 SERIES _ J y T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward


    OCR Scan     		PDF BYV33 T-03-19 bbS3T31 bb53T31 D0113ST

    T63N

    Abstract: philips dl 711
    Text: 11 N AMER P H IL IP S /D IS C R E T E Q tE D PHS1401 SERIES fc>b53T31 Q D l l b T S E • t - 03-n ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft


    OCR Scan     		PDF PHS1401 b53T31 PHS1401, PHS1402, PHS1403, PHS1404. PHS1401 T63N philips dl 711

    BYV22

    Abstract: No abstract text available
    Text: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are


    OCR Scan     		PDF bb53T31 BYV22 BYV22â btiS3T31 00105T1

    ajs 75-7

    Abstract: M3168 M3170 56295B
    Text: BYV120 SERIES T-OJ-17 _ PHILIPS INTERNATIONAL SbE J> I 711002b 0041400 ST7 « P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in


    OCR Scan     		PDF BYV120 T-OJ-17 711002b BYV120- QQ414C M3170 T-03-17 ajs 75-7 M3168 M3170 56295B

    M2873

    Abstract: M2876 m2878 M2872 BYV42 Ultra Fast Recovery Double Rectifier Diodes m073 M2877
    Text: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53*131 Â Q022SÖ3 b ■ BY V4 2 b h H I E S T -O Z -rt ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r


    OCR Scan     		PDF Q022SÃ BYV42 M0746 M2873 M2876 m2878 M2872 Ultra Fast Recovery Double Rectifier Diodes m073 M2877

    Untitled

    Abstract: No abstract text available
    Text: BYV118 SERIES s SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and


    OCR Scan     		PDF BYV118

    M03A

    Abstract: No abstract text available
    Text: -I—1_ QbE D ^MIER^PHXLIPS/discrete LbS m B l O Q in a i 7 C122 SERIES r - 2 S T - l S' THYRISTORS The C l22 series devices are glass-passivated thyristors featuring alloy-bonding, thus being particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching.


    OCR Scan     		PDF C122F M03A

    m1204 diode

    Abstract: M1204 M3154 BYV143-35 BYV143 M3161 m2784 M3152 M31 diode
    Text: ' 11 131=53^31 HSE D N AMER P H I L I P S / D I S C R E T E □ 05271=] 5 • BYV143 SERIES 7 ^ 0 3 -1 ^ SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-ieakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and


    OCR Scan     		PDF BYV143 fab53T31 T-03-19 m1209 m3154 m1204 diode M1204 M3154 BYV143-35 M3161 m2784 M3152 M31 diode

    Untitled

    Abstract: No abstract text available
    Text: 25E D N AUER PHI LIP S/DISCRETE • 1^53=131 0023573 3 ■ BYV34 SERIES T 1 0 3 - /9 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for


    OCR Scan     		PDF BYV34 Q025Sfll bbS3131 0Q525fl2 T-03-19

    TO-319

    Abstract: Ultra Fast Recovery Double Rectifier Diodes metallic rectifier diode BYV32 IEC134 t0319
    Text: - N AMER P H IL IP S /D IS C R E T E 2SE D • - ' - | bbS3T31 005SSS3 dï V<5'd Ô ■ SLRIES T - o S - jC } ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward


    OCR Scan     		PDF 005SSS3 BYV32 bbS3131 G0225b2 T-03-Ã TO-319 Ultra Fast Recovery Double Rectifier Diodes metallic rectifier diode IEC134 t0319

    BYQ28

    Abstract: No abstract text available
    Text: N A ME R PHILIPS/DISCRETE 2 SE D • 1^53=131 0 0 2 2 3 T 5 _ _ S ■ BYQ28 SERIES A 7 - 0 3 -1 7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward


    OCR Scan     		PDF BYQ28 operati1-03-17 bbS3T31 0DEEM03 D0EE404

    Untitled

    Abstract: No abstract text available
    Text: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in


    OCR Scan     		PDF PBYR1635 PBYR1640 PBYR1645 b5313 PRYR1fi45 bbS3T31 T-03-17 M3192

    Untitled

    Abstract: No abstract text available
    Text: asaL. PBYR3035PT PBYR3040PT PBYR3045PT — N AK ER PHILIPS/DISCRETE 2 SE D E3 ,^53*131 0 0 2 2 1 6 7 fl B T -0 3 -fi SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage


    OCR Scan     		PDF PBYR3035PT PBYR3040PT PBYR3045PT