transistor BC137
Abstract: BC137 RE5RE50 24516 bc107 connections bc136 VP1127 transistor bc102 vp251 M37274EFSP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
M37274EFSP
transistor BC137
BC137
RE5RE50
24516
bc107 connections
bc136
VP1127
transistor bc102
vp251
|
PDF
|
T147
Abstract: 3307r schlumberger 2N4896 2N5220 2N4400 2N4401 2N4402 2N4403 FTS04400
Text: FAIRCHILD SEMICON DUC TO R fi4 DEj34t.Tt.74 0D27Sfll 1 3469674 FAIRCHILD SEMICONDUCTOR „ IDCHILD i, A Schlumberger Company • • • • • 84D 27581 D mmm 2N4400/FTS04400 ' ' - t r - i i 2N4401/FTS04401 Small Signal General Purpose Amplifiers & Switches
|
OCR Scan
|
D27Sfll
2N4400/FTS04400
2N4401/FTS04401
2N/FTS04401)
2N4402,
2N4403
2N4400
2N4401
FTS04400
T147
3307r
schlumberger
2N4896
2N5220
2N4402
2N4403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope
|
OCR Scan
|
bb53R31
0D2707D
BZG03
OD106A
DO-214AC
BZG03-C10
BZG03-C270
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b*lE B b b S S 'm y 0D27blJ5 2ST BU87fc> APX BC878 BC880 v SMALL-SIGNAL DARLINGTON TRANSISTORS PNP epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.
|
OCR Scan
|
0D27blJ5
BU87fc>
BC878
BC880
BC875,
BC877,
BC879.
BC876
D027bD7
|
PDF
|
photodiode linear array
Abstract: Siemens photodiode linear array photodiode element 9 ELEMENT photoDIODE ARRAY
Text: SIEMENS AKTIENGESELLSCHAF 4?E S fl£3SbOS 0D2744'Ì fi « S I E G SIEMENS KOM 0622045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT [ - 4 l - .5 5 Outline Drawing Dimensions mm PC board Strip Chip Seal 1 1$2V 13.7 13.1 —I— t 4J- i The p a c k a g e consists of a PC board with
|
OCR Scan
|
-Rl-55
photodiode linear array
Siemens photodiode
linear array photodiode element
9 ELEMENT photoDIODE ARRAY
|
PDF
|
BT169
Abstract: BT 169 D bt 169
Text: N AMER PHILIPS/DISCRETE t>1E D • ^53*131 0D2732Ô 0Û4 H A P X BT169 SERIES THYRISTORS F u lly -d iffu s e d th y ris to rs in T O — 92 package, w ith lo w gate cu rre n t requirem ent suitable fo r driving fro m IC o u tp u ts. A p p lic a tio n s include relay and co il pulsing, c o n tro l o f small DC m otors, small lamps,
|
OCR Scan
|
0D2732Ã
bt169-b
MLA862
BT169
BT 169 D
bt 169
|
PDF
|
BL P9n
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D bbSBTBl 0D27Dfl3 254 « A P X Philips Semiconductors Product specification Double low-voltage avalanche regulator diodes PLVA2600A series QUICK REFERENCE DATA FEATURES • Very low dynamic impedance at low current • Hard breakdown knee
|
OCR Scan
|
0D27Dfl3
PLVA2600A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
BL P9n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 ^ 5 3 7 0D277Ô3 •% 'Z -V lO E MK44S80 N,X -15/17/20 SGS-THOMSON Ki]D i lllL[lCTlH]®lD©S 65,536-BIT FAST CMOS 16 K X 4 CACHE TAGRAM S G S-THOMSON 3ÜE PIN CONNECTION FEATURES • ■ ■ ■ ■ ■ ADVANCE DATA » 16Kx 4 FAST CMOS CACHE TAGRAM
|
OCR Scan
|
0D277Ã
MK44S80
536-BIT
24-PIN
16Kx4
|
PDF
|
BC548B PHILIPS
Abstract: BC546 philips BC548c PHILIPS BC548A BC547 driver audio bc547 bc54b BC546 BC547B BC546A
Text: I I N AMER PHILIPS/DISCRETE bTE D • bbSBTBl 0D2755Ö bfl3 H A P X BC546 to 548 I SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO-92 envelope, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA
|
OCR Scan
|
0D2755Ã
BC546
BC547
BC548
BC548B PHILIPS
BC546 philips
BC548c PHILIPS
BC548A
BC547 driver
audio bc547
bc54b
BC547B
BC546A
|
PDF
|
triac bt139
Abstract: 800H BT139 T0220AB RJ28
Text: N AMER PHILIPS/DISCRETE b^E D • bbSSTSl 0D272fc>5 070 ■ APX Preliminaryspec Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications
|
OCR Scan
|
bb53131
0D27Bb5
BT139
T0220AB
BT139-
T0220AB;
T0220
triac bt139
800H
RJ28
|
PDF
|
B1151
Abstract: BT151F BT151F-500 M2288
Text: N AMER PHILIPS/DISCRETE b'îE D • bbSB'ìBl 0D27310 Il 4 «APX BT151F SERIES FULL-PACK THYRISTORS Glass-passivated thyristors in SOT-186 envelopes, incorporating electrical isolation between the mounting base and all three terminals. Applications include temperature control, motor control,
|
OCR Scan
|
0D27310
BT151F
OT-186
BT151F-500
OT-186
D8561
M2288
B1151
M2288
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor
|
OCR Scan
|
0D271bD
H11AA1-H11AA4
H11AAI
S-42662
92CS-429S1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase
|
OCR Scan
|
0D273bb
BTW42â
1000R.
42-600R
1000R
0D273bT
BTW42
BTW38
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b5E D bb53531 0D27575 7bE • APX BC556 to 558 yv. SILICON PLANAR EPITAXIAL TRANSISTORS I General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA
|
OCR Scan
|
bb53531
0D27575
BC556
BC556
BC557
BC558
BC556A
|
PDF
|
|
|
BT 152 600R Philips
Abstract: BT152 BT 152 bt152 800r 600R 800R BT152-400R OC222 crowbar bt152400r
Text: N AMER b^E PHILIPS/DISCRETE D • ^^53^31 0D2732D 0^3 HAPX BT152 SERIES THYRISTORS Glass-passivated th y ris to rs in T O —2 2 0 A B envelopes, w h ich are p a rtic u la rly suitable in situations creating high fa tig ue stresses involved in therm al cyclin g and repeated sw itch in g . A p p lica tio n s
|
OCR Scan
|
GG27320
BT152
O-220AB
BT152-400R
220AB
D8615A
BT 152 600R Philips
BT 152
bt152 800r
600R
800R
OC222
crowbar
bt152400r
|
PDF
|
BCY10
Abstract: BCY12 BCY70-BCY71-BCY72 BCY71 BCY70 BCY72 silicon planar epitaxial transistors
Text: N AMER PHILIPS/DISCRETE bbS3T31 b'IE » 0D27bBb TT3 H A P X BCY70 to 72 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A T A
|
OCR Scan
|
bbS3T31
0D27bBb
BCY70
BCY71
BCY72
BCY71
BCY10
BCY12
BCY70-BCY71-BCY72
BCY72
silicon planar epitaxial transistors
|
PDF
|
TC528257
Abstract: n724
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The
|
OCR Scan
|
TC528257
144WORDS
TC528257
144-w
512-words
TC528257J/SZ/nVTR1017240
TC528257J/SZ/FT/TR-70
TC528257J/SZ/FT/TR-80
n724
|
PDF
|
8L14
Abstract: pal6l16acns PAL6L16A
Text: ADV M I C R O P L A / P L E / A R R A Y S 1t / Ï Ë J Q2S7Sat OüäVl'H 8 T-46-13-47' Decoder Series 6L16A 8L14A Ordering Inform ation Features/B enefits • 14 to 16 output* PAL6L16A C NS STD • Efficient Implementation of decoder« PROGRAMMABLE ARRAY LOGIC
|
OCR Scan
|
T-46-13-47'
6L16A
8L14A
PAL6L16A
L6L16A
PAL8L14A
025752b
6L16A,
8L14
pal6l16acns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for
|
OCR Scan
|
IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS Clocked FIFO With Bus Matching and Byte Swapping IDT723613 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity FIFO buffering data from Port A
|
OCR Scan
|
IDT723613
64x36
36-bits
18-bits
00S742b
IDT723613
PN120-1)
PQ132-1)
3145drw21
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. CMOS Sync BiFlFO With Bus-Matching 256x36x2, 512x36x2, 1,024x36x2 PRELIMINARY IDT723624 IDT723634 IDT723644 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.
|
OCR Scan
|
256x36x2,
512x36x2,
024x36x2
IDT723624
IDT723634
IDT723644
2S771
|
PDF
|
BLY88A
Abstract: A41E BLY88 W1032 Paver Components
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is
|
OCR Scan
|
DQ57R27
BLY88A
to-16
BLY88A
A41E
BLY88
W1032
Paver Components
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I M ICRO CO M PUTERS M 37710M 8LX X X H P par?ro*u' \ìrnst“’à S IN G LE -C H IP 1 6-B IT CM O S M IC R O C O M P U T E R DESCRIPTION • W ide operating temperature range 16-bit micro • Interrupts. 19 types 7 levels
|
OCR Scan
|
37710M
16-bit
80-pin
|
PDF
|
4N50
Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB
|
OCR Scan
|
34tclt
0e7117
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
t-39-11
O-22QAB
IRF430
IRF431
IRF432
IRF433
4N50
IRF830
irf4321
MTP4N45
IRF430
IRF 5054
MTP4N50
MTM4N50
MK48Z02B-20
IRF431
|
PDF
|
