0D177B3 Search Results

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Text: MSE T> m T0T72S0 0D177b3 2 « T O S M TOSHIBA TRANSISTOR 2N4401 SILICON NPN EPITAXIAL TYPE PCT PROCESS T - ^ i -7 3 TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FE A T U R E S: . Low Leakage Current : Iç£v=100nA(Max.)* lBEV=-100nA(Max.)