Untitled
Abstract: No abstract text available
Text: TT T O S H I B A -CDISCRÉTE/OPTOJ- 9097 250 TOSHIBA DISCRETE/OPTO DÌT| T0T72S0 D017GMM 3 | 99D 17044 DT-Hl-S) TL-S I 3 2 GaAsP RED LIGHT EMISSION U n i t in m m FEATURES: . Hi g h Intensity. . A l l P l a s t i c M o l d T y p e : L i g h t R e d T r a n s p a r e n t L ens.
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T0T72S0
D017GMM
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Untitled
Abstract: No abstract text available
Text: m TOSHIBA {DI SC RE TE /O PT O} 9097250 TO S H IB A TT < D IS C R E T E /O P T O > 99D DE I T0T72S0 001711E S 17112 D TLS2II GaAsP RED LIGHT EMISSION I FEATURES: * Red All Plastic Mold Type * Rectangular Type Surface Size 2 x4mm * Low Drive Current, High Intensity Red Light Emission.
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T0T72S0
001711E
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Untitled
Abstract: No abstract text available
Text: MSE T> m T0T72S0 0D177b3 2 « T O S M TOSHIBA TRANSISTOR 2N4401 SILICON NPN EPITAXIAL TYPE PCT PROCESS T - ^ i -7 3 TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FE A T U R E S: . Low Leakage Current : Iç£v=100nA(Max.)* lBEV=-100nA(Max.)
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T0T72S0
0D177b3
2N4401
100nA
-100nA
150mA,
2N4403
100MHz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8853-AS
18GHz
15GHz
MW10120196
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2SC3298A
Abstract: 2SC3298 2SA1306 toshiba 0D07T
Text: Sb TOSHIBA {DISCRETE/OPTO} 2SC3298 2SC3298A I2SC3298B 9097250 T O S H IB A DE~jj ^ 0 ^ 7 5 5 0 G D D ? t 7 S SILICON NPN EPIT A X IA L TYPE PCT PROCESS 5ôC (D IS C R ETE /O PTO ) 07675 o r - POWER AMPLIFIER APPLICATIONS. n -o 7 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS.
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2SC3298
2SC3298A
I2SC3298B
100MHz
2SA1306,
2SA1306A,
2SA1306B
2SC3298B
2SA1306 toshiba
0D07T
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Untitled
Abstract: No abstract text available
Text: TCD5210BD GENERAL T C D 5 2 1 0 B D is an interlin e C C D area im ag e sensor d e v e lo p e d fo r a C C IR system B / W television camera. This device h as sig n a l pixels o f 681 h o rizo n tal x 582 (vertical), a n d its im a g e size a g re e s w ith 1 / 2 inch type
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TCD5210BD
T0T72S0
G0213B3
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TLP595A
Abstract: TLP595 E67349 11-9A1
Text: PHOTO RELAY TLP595A T L P 5 9 5 A TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared e m itting diode optically coupled to a photo-MOS FET in a six lead plastic D IP package.
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TLP595A
TLP595A)
TLP595A
300mA
2500Vrms
UL1577,
E67349
TLP595
E67349
11-9A1
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MPSA42
Abstract: MPS-A42
Text: 45E D • ^0=17230 D017ñfc.ñ 5 IT0S4 TOSHIBA TRANSISTOR M PSA42, 43 SILICON NPN TRANSISTOR TOSHIBA DISCRETE/OPTO FOR HIGH VOLTAGE CONTROL APPLICATION. FLATURES: . High Voltage : V(jf?o=300V (MPSA42) VChO=200V (MPSA43) . Low Saturation Voltage : V^£(s a t) = 0.5V(Max.)
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PSA42,
MPSA42)
MPSA43)
MPSA92,
MPSA93
MPSA42
MPSA43
MPS-A42
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MG30G1BL3
Abstract: MG30G2CL3 C2514 2.45G VCO MG30G2DL1 MG30G2DL MG30G6EL1 mg30g1jl1
Text: TO TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO , Ä , SEMICONDUCTOR DE I TDTTSSO D D l t a n 7 90D 16219 M.G30G1 M G 3 0 G 1 M G 3 0 G 2 M G 3 0 G 2 M G 3 0 G 6 TECHNICAL DATA DT"33"35“ BL3 J L 1 C L 3 D L 1 E L 1 Unit ln mm CO .J « »H o o
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G30G1
MG30G2DL
DT-33-35'
600V0E
T0T72S0
0Qlb224
MG30G1BL3
MG30G1JL1
MG30G2CL3
MG30G2DL1
C2514
2.45G VCO
MG30G6EL1
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mg50g2
Abstract: 16441 MG50G2CH1 lt 7550
Text: •Ì0 DE TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO ¿/oáhiha SEMICONDUCTOR 90D 0Dlt,4Ml a I 16441 D TOSHIBA GTR MODULE MG50G2CH1 TECHNICAL DATA SILICON N-CHANNEL MOS+NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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MG50G2CH1
mg50g2
16441
MG50G2CH1
lt 7550
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TCD5241BD
Abstract: TCD5251 TCD5241B
Text: TCD6219AF SUB-CARRIER PULSE GENERATING EXTERNAL SYNCHRONIZATION 1C The C M O S LSI of TC6219AF w as developed to generate sub-carrier pulse for color CCDs, TCD5241BD and TCD5251BD. The TC6219AF can be combined with TC6220AF or TC6133AF and a vertical clock driver to constitute the
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TCD6219AF
TC6219AF
TCD5241BD
TCD5251BD.
TC6220AF
TC6133AF
TCDS251BD.
T0T72S0
TCD5251
TCD5241B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - pidB = 45 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-30L
t17250
TIM3742-30L
MW50480196
CI02235b
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