ic MARKING QG
Abstract: No abstract text available
Text: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5
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SUR50N025-06P
O-252
SUR50N025-06P--E3
SUR50N025-06P-T4--E3
S-50932--Rev.
09-May-05
ic MARKING QG
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ic MARKING QG
Abstract: TB-17 SUR50N025-05P
Text: SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUR50N025-05P
O-252
SUR50N025-05P--E3
SUR50N025-05P-T4--E3
s-50933--Rev.
09-May-05
ic MARKING QG
TB-17
SUR50N025-05P
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SUU50N025-05P
Abstract: ic MARKING QG TB-17
Text: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUU50N025-05P
O-251
SUU50N025-05P--E3
S-50931--Rev.
09-May-05
SUU50N025-05P
ic MARKING QG
TB-17
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sud*50n025-06p
Abstract: SUD50N025-06P-E3
Text: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5
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SUD50N025-06P
O-252
SUD50N025-06P--E3
18-Jul-08
sud*50n025-06p
SUD50N025-06P-E3
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Untitled
Abstract: No abstract text available
Text: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5
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SUR50N025-06P
O-252
SUR50N025-06P--E3
SUR50N025-06P-T4--E3
08-Apr-05
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sud*50n025-06p
Abstract: SUD50N025-06P SUD50N025-06P-E3
Text: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5
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SUD50N025-06P
O-252
SUD50N025-06P--E3
S-50934--Rev.
09-May-05
sud*50n025-06p
SUD50N025-06P
SUD50N025-06P-E3
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Untitled
Abstract: No abstract text available
Text: 173D Vishay Sprague TANTALEX Solid-Electrolyte Capacitors, Axial-Leaded, Molded-Case FEATURES • Miniature axial-lead capacitors available in 5 sizes • Precision molded in gold colored, flame retardant, thermosetting epoxy resin • Laser marked for improved legibility and tapered end of
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09-May-05
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173D107X9020Y
Abstract: No abstract text available
Text: 173D Vishay Sprague TANTALEX Solid-Electrolyte Capacitors, Axial-Leaded, Molded-Case FEATURES • Miniature axial-lead capacitors available in 5 sizes • Precision molded in gold colored, flame retardant, thermosetting epoxy resin • Laser marked for improved legibility and tapered end of
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08-Apr-05
173D107X9020Y
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MLP33-10
Abstract: MLP44-16 SiP2213 SiP2213DLP-AA-T1 SiP2213DMP-XZ-T1
Text: SiP2213 New Product Vishay Siliconix Dual Output Low Dropout Regulator FEATURES D D D D D D D D APPLICATIONS 2.25-V to 5.5-V Input Voltage Range Two Outputs − 150 mA and 300 mA Low Ground Current Open Drain Driver Output POR Current Limit Thermal Shutdown
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SiP2213
MLP33-10
MLP44-16
01-mF
S-50922--Rev.
09-May-05
SiP2213DLP-AA-T1
SiP2213DMP-XZ-T1
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TB-17
Abstract: No abstract text available
Text: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUU50N025-05P
O-251
SUU50N025-05P--E3
18-Jul-08
TB-17
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Untitled
Abstract: No abstract text available
Text: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUU50N025-05P
O-251
SUU50N025-05P--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive
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WTC2302
OT-23
OT-23
09-May-05
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TB-17
Abstract: SUR50N025-05P
Text: SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS
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SUR50N025-05P
O-252
SUR50N025-05P--E3
SUR50N025-05P-T4--E3
18-Jul-08
TB-17
SUR50N025-05P
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SUD50N024-06P
Abstract: SUD50N024-06P-E3
Text: SUD50N024-06P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency
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SUD50N024-06P
O-252
SUD50N024-06P--E3
18-Jul-08
SUD50N024-06P
SUD50N024-06P-E3
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SI5475BDC
Abstract: No abstract text available
Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated
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Si5475BDC
Si5475BDC-T1--E3
S-50939--Rev.
09-May-05
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Untitled
Abstract: No abstract text available
Text: r 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ R E V IS IO N S DIST 16 LTR DESCRIPTION RELEASED PER EC 0 S 1 4 - Q 1 6 1 - 0 5 DATE DWN APVD 09M AY05 BM JL 1\ P O L Y E S T E R , PBT, BLACK, P E R M I L - M - 2 4 5 1 9 .
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09MAY05
09MAY05
31MAR2000
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c0730
Abstract: No abstract text available
Text: c a t a l S cT W I M I C R O SWI TCH I mm* « wwwm tmm [ Ï ] EX-Q800 SWITCH - ENCLOSED MMMOT. MMH I S R nin ^ - »««a* F E D . M FR . CODE 3.66 Oi-O 30- •MT6 HOLE ANO SLOT FOR .2 9 0 DIA SCREW -HOLE FOU « a 10 PAN HEAO SCREW • ± .0 0 8 2.750-
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EX-Q800
09MAY05
Tk03DEC09
c0730
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EXD-Q26-2
Abstract: J780 DT-2R-A7 AK 2015
Text: MICRO SWITCH FREEPORT IL L IN O IS A OF D IV IS IO N FCO. M FG . C A T A L O G L IS T IN G U S A SWITCH-ENCLOSED HONEYW ELL MTG HOLE AND SLO T FOR . 2 5 0 DIA SCREW EXD-Q2 6 - 2 HOLE FOR NO. 10 PAN HEAD SCREW 6 5.250 ±.030 COOK 3.660±.0302.750 ±.008-
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3779A
coe0495
C06I38I
C063239
c073019
09MAY05
H10017245
EXD-Q26-2
EXD-Q26-2
J780
DT-2R-A7
AK 2015
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Untitled
Abstract: No abstract text available
Text: MICRO SWITCH F R £ E °0*T ILLINOIS A OF D»V>S»ON EXD-Q-3 C A T A L O G LIS T IN G SWITCH-ENCLOSED U S A HONEYWELL FCO MFG- COOC •MTG HOLE AND SLOT FOR 250 DIA SCREW 3 .6 6 0 Jb.0 3 0 ■HOLE FOR NO. 10 PAN HEAD SCREW S 2 .7 5 0 1 .0 0 8 - .5 3 - »
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0A-125
A-125
5A-250
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33-Df
Abstract: EX-Q800
Text: c a t a l S cT W M I C R O SWI TCH « nmsh> * km um w mm WWW. MMÜ I B ! F E D . M F » . COOC EX-Q800 SWITCH - ENCLOSED fjg | R nin ^ - »««S * . 3 6 6 0± -0 3 0 -MT6 HOLE ANO SLOT FOR .2 9 0 DIA SCREW -HOLE FOI* « » .IO PAM HEAO SCREW « - ± .0 0 8
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JUNE64
DJSRI2878
C026103
IC03I559
AJJ83
C06I38I
09MAY05
7071S-^
EX-Q800
IO-32UNF
33-Df
EX-Q800
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EX-N15
Abstract: 1032L U-173
Text: " S 3 âl8î TS t!n? M I C R O SWITCH SWITCH“ ENCLOSED I NWW* Of »«"HWW HCNlTwiH UWt««« OUti«» i j j j j Muwti. HkutoM. T H I S D R A W IN G C O V E R S A P R O P R IE T A R Y ITEM 'A N D I S T H E P R O P E R T Y O P M IC R O S W I T C H . A D IV IS IO N O F
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EX-N15
EX-N15
1032L
U-173
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. kPD COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS 16 P LTR DESCRIPTION A POLYESTER, PBT, BLACK, 2\ POLYMETHYLPENTENE 3\ ZINC 4\ PHOSPHOR PER DWN
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09MAY05
31MAR2000
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MIL-M-24519
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 16 AJ LTR DESCRIPTION A POLYESTER, 2\ BLACK, POLYMETHYLPENTENE ZINC D PBT, PER PER GENERAL PHOSPHOR È\ BRASS
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09MAY05
31MAR2000
MIL-M-24519
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Untitled
Abstract: No abstract text available
Text: C A T A L O G L IS T IN G M ICRO SWITCH FREEPORT ILLINO IS A DIVISION OF FCO. M FG . U S A SWITCH-ENCLOSED HONEYWELL MTG HOLE AND SLO T FOR . 2 5 0 DIA SCREW EXD-Q26-2 HOLE FOR NO. 10 PAN HEAD SCREW 6 5 .2 5 0 ± .0 3 0 COOK 3 .6 6 0 ± .0 3 0 2.750 ± .0 0 8 -
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EXD-Q26-2
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