B090701-002
Abstract: GR-326 GR-326-CORE Telcordia 326-CORE LC 45 degrees Connector EIA-455
Text: Qualification Test Report 501-683 09Mar09 Rev B LC Duplex Adapter For LC Cutouts 1. INTRODUCTION 1.1. Purpose | | | | | Testing was perform ed on Tyco Electronics LC Duplex Adapters for LC Cutouts, to determ ine their conform ance to Tyco Electronics Product Specification 108-2358, which contains a subset of tests from
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09Mar09
GR-326-CORE,
GR-326-CORE
B090701-002
GR-326
Telcordia 326-CORE
LC 45 degrees Connector
EIA-455
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Si3433CD
Abstract: SI3433CDV-T1 Vishay DaTE CODE tsop-6 Si3433CDV
Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available
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Si3433CDV
Si3433CDV-T1-E3
Si3433CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Si3433CD
SI3433CDV-T1
Vishay DaTE CODE tsop-6
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SI4559ADY
Abstract: No abstract text available
Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5
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Si4559ADY
Si4559ADY-T1-E3
Si4559ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4559
Abstract: SI4559ADY-T1-E3 Si4559ADY
Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5
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Si4559ADY
Si4559ADY-T1-E3
Si4559ADY-T1-GE3
11-Mar-11
si4559
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Si4532ADY
Abstract: Si4532ADY-T1-E3 N- and P-Channel 30-V D-S MOSFET
Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21
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Si4532ADY
Si4532ADY-T1-E3
Si4532ADY-T1-GE3
11-Mar-11
N- and P-Channel 30-V D-S MOSFET
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Untitled
Abstract: No abstract text available
Text: IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9010, SiHFR9010)
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IRFR9010,
IRFU9010,
SiHFR9010
SiHFU9010
O-251)
O-252)
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Untitled
Abstract: No abstract text available
Text: Si4388DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V ID (A)a Qg (Typ.) 10.7
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Si4388DY
Si4388DY-T1-E3
Si4388DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4936CDY
Si4936CDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4567DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 N-Channel - 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 0.085 at VGS = - 10 V - 4.4 0.122 at VGS = - 4.5 V - 3.7 Qg (Typ.)
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Si4567DY
Si4567DY-T1-E3
Si4567DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4569DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = - 10 V - 6.0 0.039 at VGS = - 4.5 V - 4.9
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Si4569DY
Si4569DY-T1-E3
Si4569DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5
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Si4816BDY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4346DY
Abstract: Si4346DY-T1-E3 Si4346DY-T1-GE3
Text: Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.023 at VGS = 10 V 8 0.025 at VGS = 4.5 V 7.5 0.030 at VGS = 3.0 V 6.8 0.036 at VGS = 2.5 V 6.0 Qg (Typ.) 6.5 • Halogen-free According to IEC 61249-2-21
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Si4346DY
Si4346DY-T1-E3
Si4346DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V 8a • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4778DY
Si4778DY-T1-E3
Si4778DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21
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Si4465ADY
Si4465ADY-T1-E3
Si4465ADY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V 8a • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4778DY
Si4778DY-T1-E3
Si4778DY-T1-GE3
11-Mar-11
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SI4803
Abstract: Si4803DY
Text: Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Si4803DY
Si4803DY-T1-E3
Si4803DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4803
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Untitled
Abstract: No abstract text available
Text: Si4668DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0105 at VGS = 10 V 16.2 0.0125 at VGS = 4.5 V 13 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4668DY
Si4668DY-T1-E3
Si4668DY-T1-GE3
11-Mar-11
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si4124
Abstract: No abstract text available
Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4124DY
Si4124DY-T1-E3
Si4124DY-T1-GE3
18-Jul-08
si4124
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Si4532ADY-T1-E3
Abstract: Si4532ADY
Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21
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Si4532ADY
Si4532ADY-T1-E3
Si4532ADY-T1-GE3
18-Jul-08
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SC-70-6
Abstract: No abstract text available
Text: SiA911EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition
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SiA911EDJ
SC-70
SC-70-6
18-Jul-08
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SI4455DY-T1-GE3
Abstract: No abstract text available
Text: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4455DY
Si4455DY-T1-E3
Si4455DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4936CDY
Si4936CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5
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Si4816BDY
Si4816BDY-T1-E3
Si4816BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4831BDY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.042 at VGS = - 10 V - 6.6 0.065 at VGS = - 4.5 V - 5.3 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET
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Si4831BDY
Si4831BDY-T1-E3
Si4831BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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