MULTIGIG RT2 CONNECTOR
Abstract: CTLB039733-017 CTLB021367-068 CTLB082641-001 20-millivolt BLY51
Text: 501-544 Qualification Test Report 08Oct08 Rev B MULTIGIG RT* Signal Connectors, Tiers 1 and 2, and RT2 Mezzanine | | 1. INTRODUCTION 1.1. Purpose | Testing was perform ed on the Tyco Electronics MULTIGIG RT*, Tiers 1 and 2, and RT2 Mezzanine connectors to determ ine their conform ance to the requirem ents of Product Specification 108-2072
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08Oct08
20Jan02
14Aug02.
CTLB021367-068.
MULTIGIG RT2 CONNECTOR
CTLB039733-017
CTLB021367-068
CTLB082641-001
20-millivolt
BLY51
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MULTIGIG RT2 CONNECTOR
Abstract: "EIA 364-28 test condition ii" EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-23 connector reliability MULTIGIG RT2 CONNECTOR 501-544 Signal Connectors
Text: Product Specification 108-2072 08Oct08 Rev D MULTIGIG RT* Signal Connectors, Tiers 1 and 2, and RT2 Mezzanine | | 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics MULTIGIG RT* Signal connector system which uses a m odular concept and interconnects two printed
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08Oct08
MULTIGIG RT2 CONNECTOR
"EIA 364-28 test condition ii"
EIA-364-13
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-28
EIA-364-23 connector
reliability MULTIGIG RT2 CONNECTOR
501-544 Signal Connectors
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Untitled
Abstract: No abstract text available
Text: IRF9640S, SiHF9640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S S G RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRF9640S,
SiHF9640S
SMD-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Surface Mount Available in Tape and Reel
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IRF9510S,
SiHF9510S
SMD-220
18-Jul-08
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MBRB20100CTG
Abstract: MBR20 MBR20100CTG-1 MBR2080CTG-1 MBR2090CTG-1 MBRB2080CTG MBRB2090CTG
Text: MBRB20.CTG, MBR20.CTG-1 Vishay High Power Products Schottky Rectifier, 2 x 10 A FEATURES MBR20.CTG-1 MBRB20.CTG • 150 °C TJ operation • Center tap D2PAK and TO-262 packages • Low forward voltage drop Base common cathode 2 • High purity, high temperature epoxy encapsulation for
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MBRB20.
MBR20.
O-262
O-262
18-Jul-08
MBRB20100CTG
MBR20
MBR20100CTG-1
MBR2080CTG-1
MBR2090CTG-1
MBRB2080CTG
MBRB2090CTG
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irf740s
Abstract: SiHF740S
Text: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration • Available in Tape and Reel 0.55 Available RoHS* • Dynamic dV/dt Rating
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IRF740S,
SiHF740S
SMD-220
18-Jul-08
irf740s
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface Mount VDS V 500 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Available • Available in Tape and Reel VGS = 10 V RoHS* • Dynamic dV/dt Rating
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IRF830S,
SiHF830S
SMD-220
18-Jul-08
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smd e3a
Abstract: IRF630S SiHF630S SiHF630S-E3 SMD-220 IRF630STRLPBF
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration
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IRF630S,
SiHF630S
SMD-220
SMD-220
18-Jul-08
smd e3a
IRF630S
SiHF630S-E3
IRF630STRLPBF
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MBRB20100CTGPBF
Abstract: MBRB20100CTG MBR20 MBR20100CTG-1 MBR2080CTG-1 MBR2090CTG-1 MBRB2080CTG MBRB2090CTG TO262
Text: MBRB20.CTGPbF/MBR20.CTG-1PbF Vishay High Power Products Schottky Rectifier, 2 x 10 A FEATURES MBRB20.CTGPbF MBR20.CTG-1PbF • 150 °C TJ operation • Center tap D2PAK and TO-262 packages • Low forward voltage drop • High purity, high temperature epoxy encapsulation for
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MBRB20.
CTGPbF/MBR20.
MBR20.
O-262
O-262
18-Jul-08
MBRB20100CTGPBF
MBRB20100CTG
MBR20
MBR20100CTG-1
MBR2080CTG-1
MBR2090CTG-1
MBRB2080CTG
MBRB2090CTG
TO262
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ODV-065R14E17K-G
Abstract: ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17E18K-G ODV-065R17B ODV-065R15B15J15J ODV-065R15E18K-G
Text: Antenna & Subsystem Product Catalog Ver2.1 Dec 2012 Antenna & Subsystem Contents Legal
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SE-167
ODV-065R14E17K-G
ODV2-065R18J-G
0/ODV-065R14E17K-G
V/ODV-065R18EK-G
Comba Telecom
TA-E12FDA-A
ODV-065R17E18K-G
ODV-065R17B
ODV-065R15B15J15J
ODV-065R15E18K-G
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Untitled
Abstract: No abstract text available
Text: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.20 Qg (Max.) (nC) 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S Surface Mount Available in Tape and Reel
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IRF9540S,
SiHF9540S
SMD-220
18-Jul-08
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930 diode smd
Abstract: No abstract text available
Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRL530S,
SiHL530S
SMD-220
18-Jul-08
930 diode smd
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Untitled
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRF820S,
SIHF820S
SMD-220
18-Jul-08
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VISHAY BFC2 336
Abstract: VISHAY BFC2 336 2 22474 MKP 435 2222 336 24104 26102 capacitor MKP 336 2 21124- 4 2222 336 29286 29035 VISHAY MARKING ED
Text: MKP 336 2 X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES 168x12 halfpage 10 to 27.5 mm lead pitch. Supplied loose in box, taped on reel w l e3 RoHS compliant product RoHS CONSTRUCTION h COMPLIANT Mono construction
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168x12
com/docs/28153/anaccaps
55/110/56/B
18-Jul-08
VISHAY BFC2 336
VISHAY BFC2 336 2 22474
MKP 435
2222 336 24104
26102
capacitor MKP 336 2
21124- 4
2222 336 29286
29035
VISHAY MARKING ED
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
08-OCT-08
05-DEC-07
01-JCAL
01-JAN-07
13-DEC-05
14-JAN-05
09-SEP-04
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Untitled
Abstract: No abstract text available
Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S S G RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRF9630S,
SiHF9630S
SMD-220
18-Jul-08
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